Radio frequency front end system with an integrated transmit/receive switch
View Patent ↗A Radio Frequency (RF) front end system and method are disclosed. The RF front end system comprises an antenna, a matching network coupled to the antenna, a power amplifier (PA) coupled to the matching network via a port on a transmit path, a low noise amplifier (LNA) coupled to the matching network via the port on a receive path and at least one transmit/receive switch (T/R SW) coupled between the port and at least one of the PA and LNA.
1. A Radio Frequency (RF) front end system comprising:
an antenna;
a matching network coupled to the antenna;
a power amplifier (PA) coupled to the matching network via a port on a transmit (TX) path;
a low noise amplifier (LNA) coupled to the matching network via the port on a receive (RX) path; and
at least one transmit/receive switch (T/R SW) coupled between the port and at least one of the PA and LNA, wherein an optimal impedance of the PA is substantially similar to an optimal impedance of the LNA to enable sharing by the PA and LNA of both the same matching network and the same package pin.
2. The RF front end system of claim 1 , further comprising:
wherein the antenna and the matching network are integrated off-chip and the PA, the LNA and the at least one T/R SW are integrated on-chip.
3. The RF front end system of claim 2 , further comprising:
wherein the PA and the LNA are combined together at the port.
4. The RF front end system of claim 3 , wherein the port is a single RF port.
5. The RF front end system of claim 3 , wherein the transmit switch (TX SW) of the at least one transmit/receive switch (T/R SW) is integrated with an output stage of the PA.
6. The RF front end system of claim 5 , wherein the output stage of the PA includes a power supply pin Vdd differentially coupled to first and second input devices and to first and second cascode devices, wherein the first input device is in series with the first cascode device and the second input device is in series with the second cascode device, wherein the first input device and first cascode device provide a first differential output signal and the second input device and second cascode device provide a second differential output signal.
7. The RF front end system of claim 6 , wherein the first and second input devices are thin oxide devices and the first and second cascode devices are thick oxide devices.
8. The RF front end system of claim 5 , wherein the output stage of the PA is single-ended.
9. The RF front end system of claim 3 , wherein the LNA is a common-gate LNA.
10. The RF front end system of claim 9 , wherein the common-gate LNA includes a power supply pin Vdd differentially coupled to first and second input devices and first and second cascode devices, wherein the first input device is in series with the first cascode device and the second input device is in series with the second cascode device, wherein the first input device and first cascode device provide a first differential output signal and the second input device and second cascode device provide a second differential output signal.
11. The RF front end system of claim 10 , wherein an input impedance of the common-gate LNA is inversely proportional to a transconductance of the first and second input devices.
12. The RF front end system of claim 11 , wherein the input impedance is a common RF port impedance.
13. The RF front end system of claim 9 , wherein the common-gate LNA is single-ended.
14. The RF front end system of claim 3 , wherein the LNA is a cross-coupled common-gate LNA.
15. The RF front end system of claim 3 , wherein the LNA is a common source LNA with feedback implementation.
16. The RF front end system of claim 3 , wherein the at least one T/R SW includes first and second series transistors, first, second and third shunt transistors, first and second input signals, and first and second output signals.
17. The RF front end system of claim 3 , wherein the at least one T/R SW is single-ended.
18. The RF front end system of claim 3 , wherein the at least one T/R SW is implemented using a field-effect transistor (FET) or a transmission gate.
19. The RF front end system of claim 1 , wherein the at least one T/R SW is a plurality of transmit-receive switches.
20. A method for creating a Radio Frequency (RF) front end, the method comprising:
coupling a matching network to an antenna, coupling a power amplifier (PA) to the matching network via a port on a transmit (TX) path;
coupling a low noise amplifier (LNA) to the matching network via the port on a receive (RX) path;
coupling at least one transmit/receive switch (T/R SW) between the port and at least one of the PA and LNA;
integrating the antenna and the matching network off-chip;
integrating the PA, the LNA and the at least one T/R SW on-chip; and
combining the PA and the LNA together at the port, wherein the size and package pin count of the RF front end is reduced, wherein an optimal impedance of the PA is substantially similar to an optimal impedance of the LNA to enable sharing by the PA and LNA of both the same matching network and the same package pin.
21. A Radio Frequency (RF) front end system comprising:
an antenna;
a matching network coupled to the antenna;
a power amplifier (PA) coupled to the matching network via a port on a transmit (TX) path;
a low noise amplifier (LNA) coupled to the matching network via the port on a receive (RX) path; and
at least one transmit/receive switch (T/R SW) coupled between the port and at least one of the PA and LNA, wherein an optimal impedance of the PA is substantially similar to an optimal impedance of the LNA to enable sharing by the PA and LNA of both the same matching network and the same package pin, wherein the matching network is shared by the PA and the LNA in a transmitting mode and a receiving mode respectively without using an additional impedance matching circuit.