Integrated circuit chip with reduced IR drop
An integrated circuit chip includes a power/ground interconnection network in a topmost metal layer over a semiconductor substrate and at least a bump pad on/over the power/ground interconnection network. The power/ground mesh interconnection network includes a first power/ground line connected to the bump pad and extending along a first direction, and a connection portion connected to the bump pad and extending along a second direction.
1. An integrated circuit chip comprising:
a semiconductor substrate;
a power/ground interconnection network in a topmost metal layer over the semiconductor substrate; and
at least a bump pad on/over the power/ground interconnection network;
wherein the power/ground interconnection network comprises a first power/ground line connected to the bump pad and extending along a first direction, and a connection portion connected to the bump pad and extending along a second direction; wherein a plurality of fingers protrude from the connection portion.
2. The integrated circuit chip according to claim 1 wherein the first direction is not parallel to the second direction.
3. The integrated circuit chip according to claim 1 wherein the first direction is substantially orthogonal to the second direction.
4. The integrated circuit chip according to claim 1 wherein the fingers protrude from two opposite side edges of the connection portion and elongate in the first direction.
5. The integrated circuit chip according to claim 1 further comprising a second power/ground line in an underlying metal layer.
6. The integrated circuit chip according to claim 5 wherein the second power/ground line extends along the second direction.
7. The integrated circuit chip according to claim 5 wherein the second power/ground line is connected to at least one of the plurality of fingers by means of at least one via plug.
8. The integrated circuit chip according to claim 1 wherein the power/ground interconnection network comprises a power network and a ground network, and the power network and the ground network are interleaved.
9. The integrated circuit chip according to claim 1 wherein the bump pad is a flip chip bump pad.
10. An integrated circuit chip comprising:
a semiconductor substrate;
a bump pad on or over a topmost metal layer over the semiconductor substrate;
a first power/ground line in the topmost metal layer, connected to the bump pad and extending along a first direction; and
at least an extension portion in the topmost metal layer, connected to the bump pad and extending along a second direction;
wherein the extension portion comprises a connection portion that protrudes from the bump pad and extends along the second direction; and wherein the extension portion further comprises a plurality of fingers protruding from the connection portion.
11. The integrated circuit chip according to claim 10 wherein the fingers protrude from two opposite side edges of the connection portion and elongate in the first direction.
12. The integrated circuit chip according to claim 10 further comprising a second power/ground line in an underlying metal layer.
13. The integrated circuit chip according to claim 12 wherein the second power/ground line extends along the second direction.
14. The integrated circuit chip according to claim 12 wherein the second power/ground line is connected to at least one of the plurality of fingers by means of at least one via plug.
15. The integrated circuit chip according to claim 10 wherein the bump pad is a flip chip bump pad.
16. The integrated circuit chip according to claim 10 wherein the topmost metal layer is a redistribution layer.