IP Library Granted Patent US 8,592,888
Granted Patent B2
US 8,592,888 · App. 13/205,974 · Granted Nov 26, 2013

Field effect transistor for sensing deformation

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Quick Facts
Patent No.
US 8,592,888
App. No.
13/205,974
Granted
Nov 26, 2013
Kind
B2
Abstract

An apparatus including a first layer configured to enable a flow of charge carriers from a source electrode to a drain electrode, a second layer configured to control the density of charge carriers in the first layer using an electric field formed between the first and second layers, and a third layer positioned between the first and second layers to shield the first layer from the electric field, wherein the third layer includes a layer of electrically conducting nanoparticles and is configured such that when stress is applied to the third layer, the strength of the electric field experienced by the first layer is varied resulting in a change in the charge carrier density and a corresponding change in the conductance of the first layer.

Claims (29)

1. An apparatus comprising:

a first layer configured to enable a flow of charge carriers from a source electrode to a drain electrode,

a second layer configured to control the density of charge carriers in the first layer using an electric field formed between the first and second layers, and

a third layer positioned between the first and second layers to shield the first layer from the electric field,

wherein the third layer comprises a layer of electrically conducting nanoparticles and is configured such that when stress is applied to the third layer, the strength of the electric field experienced by the first layer is varied resulting in a change in the charge carrier density and a corresponding change in the conductance of the first layer; and

wherein the first and/or second layers are formed from at least one or more layers of graphene.

2. The apparatus of claim 1 , wherein the stress applied to the third layer is compressive, tensile or shearing stress.

3. The apparatus of claim 1 , wherein the stress applied to the third layer causes one or more of the following: a change in the position of the nanoparticles, a change in the shape of the nanoparticles, a change in the orientation of the nanoparticles, and a change in the distance between adjacent nanoparticles.

4. The apparatus of claim 1 , wherein the third layer is configured such that the distance between adjacent nanoparticles in the plane of the third layer is varied when a component of the stress is parallel to the plane of the third layer.

5. The apparatus of claim 1 , wherein the apparatus is configured such that one or more of the first, second and third layers is reversibly deformable.

6. The apparatus of claim 1 , wherein the apparatus is configured such that one or more of the third, second and the third layers is optically transparent.

7. The apparatus of claim 1 , wherein the layer of electrically conducting nanoparticles comprises one or more monolayers of electrically conducting nanoparticles.

8. The apparatus of claim 1 , wherein the apparatus is configured such that the electrically conducting nanoparticles are electrically coupled to one another by one or more of capacitive coupling and quantum mechanical coupling.

9. The apparatus of claim 8 , wherein one or more of the orientation, density and separation of the electrically conducting nanoparticles is configured to enable the electrical coupling therebetween.

10. The apparatus of claim 1 , wherein the third layer is formed from at least an electrically insulating material configured to prevent direct physical contact between adjacent electrically conducting nanoparticles of the third layer.

11. The apparatus of claim 10 , wherein the electrically insulating material comprises a surfactant.

12. The apparatus of claim 1 , wherein the apparatus comprises two or more channels, each channel configured to enable a flow of charge carriers from a source electrode to a drain electrode.

13. The apparatus of claim 12 , wherein the apparatus comprises two or more gate electrodes, each gate electrode configured to control the density of charge carriers in one or more channels using an electric field formed between the gate electrode and the respective channels.

14. The apparatus of claim 13 , wherein at least one of the two or more gate electrodes comprises side guards configured to confine the electric field of the gate electrode.

15. The apparatus of claim 13 , wherein the channels and gate electrodes are arranged to form a multiplexing architecture.

16. A device comprising the apparatus of claim 1 .

17. The device of claim 16 , wherein the device is at least one of the following: an electronic device, a portable electronic device, a portable telecommunications device, an electronic display for any of the aforementioned devices, and a module for any of the aforementioned devices.

18. A method comprising:

depositing a first layer formed from at least one or more layers of graphene;

depositing a third layer on top of the first layer; and

depositing a second layer formed from at least one or more layers of graphene on top of the third layer to form an apparatus comprising the first layer through which charge carriers flow from a source electrode to a drain electrode, the second layer controlling the density of charge carriers in the first layer using an electric field formed between the first and second layers, and the third layer positioned between the first and second layers to shield the first layer from the electric field, wherein the third layer comprises a layer of electrically conducting nanoparticles and is configured such that when stress is applied to the third layer, the strength of the electric field experienced by the first layer is varied resulting in a change in the charge carrier density and a corresponding change in the conductance of the first layer.

19. A method comprising:

providing/using an apparatus comprising a first layer formed from at least one or more layers of graphene through which charge carriers flow from a source electrode to a drain electrode, a second layer formed from at least one or more layers of graphene that control the density of charge carriers in the first layer using an electric field formed between the first and second layers, and a third layer positioned between the first and second layers to shield the first layer from the electric field, wherein the third layer comprises a layer of electrically conducting nanoparticles and is configured such that when stress is applied to the third layer, the strength of the electric field experienced by the first layer is varied resulting in a change in the charge carrier density and a corresponding change in the conductance of the first layer; and

measuring the conductance of the first layer.

Assignments (12)
PATENT SECURITY AGREEMENT Recorded Aug 6, 2024
From: RPX CORPORATION; RPX CLEARINGHOUSE LLC
To: BARINGS FINANCE LLC, AS COLLATERAL AGENT
Reel/Frame 068328/0674 →
RELEASE OF LIEN ON PATENTS Recorded Aug 5, 2024
From: BARINGS FINANCE LLC
To: RPX CORPORATION
Reel/Frame 068328/0278 →
PATENT SECURITY AGREEMENT Recorded Apr 22, 2023
From: RPX CORPORATION
To: BARINGS FINANCE LLC, AS COLLATERAL AGENT
Reel/Frame 063429/0001 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Dec 28, 2021
From: PROVENANCE ASSET GROUP LLC
To: RPX CORPORATION
Reel/Frame 059352/0001 →
RELEASE OF SECURITY INTEREST Recorded Nov 30, 2021
From: NOKIA US HOLDINGS INC.
To: PROVENANCE ASSET GROUP HOLDINGS LLC; PROVENANCE ASSET GROUP LLC
Reel/Frame 058363/0723 →
RELEASE OF SECURITY INTEREST Recorded Nov 30, 2021
From: CORTLAND CAPITAL MARKETS SERVICES LLC
To: PROVENANCE ASSET GROUP HOLDINGS LLC; PROVENANCE ASSET GROUP LLC
Reel/Frame 058983/0104 →
ASSIGNMENT AND ASSUMPTION AGREEMENT Recorded Feb 14, 2019
From: NOKIA USA INC.
To: NOKIA US HOLDINGS INC.
Reel/Frame 048370/0682 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Sep 13, 2017
From: NOKIA TECHNOLOGIES OY; NOKIA SOLUTIONS AND NETWORKS BV; ALCATEL LUCENT SAS
To: PROVENANCE ASSET GROUP LLC
Reel/Frame 043877/0001 →
SECURITY INTEREST Recorded Sep 13, 2017
From: PROVENANCE ASSET GROUP HOLDINGS, LLC; PROVENANCE ASSET GROUP LLC
To: NOKIA USA INC.
Reel/Frame 043879/0001 →
SECURITY INTEREST Recorded Sep 13, 2017
From: PROVENANCE ASSET GROUP HOLDINGS, LLC; PROVENANCE ASSET GROUP, LLC
To: CORTLAND CAPITAL MARKET SERVICES, LLC
Reel/Frame 043967/0001 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Apr 1, 2015
From: NOKIA CORPORATION
To: NOKIA TECHNOLOGIES OY
Reel/Frame 035313/0317 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Sep 6, 2011
From: KIVIOJA, JANI; WHITE, RICHARD
To: NOKIA CORPORATION
Reel/Frame 026900/0298 →