Thin film transistor array panel and method for manufacturing the same, and liquid crystal display

1. A thin film transistor array panel comprising:

a substrate;

a first thin film transistor formed on the substrate;

a color filter formed on the first thin film transistor;

a capping layer formed on the color filter; and

a pixel electrode formed on the capping layer,

wherein a through hole is formed in the color filter,

wherein a first opening and a second opening are formed in the capping layer,

wherein the pixel electrode is connected to the first thin film transistor through the first opening and the through hole,

wherein the second opening is separated from the first opening,

wherein the second opening is covered with the pixel electrode,

wherein the first opening and the second opening are through holes of the capping layer, and

wherein the color filter is formed continuously below a portion where the second opening is disposed.

2. The thin film transistor array panel of claim 1 , wherein a part of the pixel electrode that covers the second opening directly contacts an upper surface of the color filter that is also in direct contact with a bottom surface of the capping layer.

3. The thin film transistor array panel of claim 1 , wherein a part of the pixel electrode that covers the second opening is substantially level with a bottom surface of the capping layer.

4. The thin film transistor array panel of claim 1 , wherein a part of the pixel electrode that covers the second opening directly contacts the capping layer and the color filter.

5. The thin film transistor array panel of claim 1 , wherein the entire color filter is covered by a combination of the capping layer and the pixel electrode.

6. The thin film transistor array panel of claim 1 , wherein a cutout overlapping the capping layer is formed in the pixel electrode.

7. The thin film transistor array panel of claim 6 , wherein a part of the capping layer with a sub-part overlapping the cutout is substantially equal to or larger than the width of the cutout.

8. The thin film transistor array panel of claim 1 , further comprising:

a plurality of second thin film transistors connected to the first subpixel electrode.

9. The thin film transistor array panel of claim 1 , wherein the area of the first subpixel electrode is less than the area of the second subpixel electrode.

10. The thin film transistor array panel of claim 1 , wherein the first opening is formed along an extension direction of the pixel electrode.

11. A thin film transistor array panel comprising:

a substrate;

a first thin film transistor formed on the substrate;

a color filter formed on the first thin film transistor and having a through hole;

a capping layer formed on the color filter, and comprising a first opening and a second opening; and

a pixel electrode formed on the capping layer and connected to the first thin film transistor through the first opening and the through hole,

wherein the second opening is separated from the first opening,

wherein the second opening is covered with the pixel electrode,

wherein a part of the pixel electrode that covers the second opening directly contacts an upper surface of the color filter that is also in direct contact with a bottom surface of the capping layer.

12. A thin film transistor array panel comprising:

a substrate;

a first thin film transistor formed on the substrate;

a color filter formed on the first thin film transistor and having a through hole;

a capping layer formed on the color filter, and comprising a first opening and a second opening; and

a pixel electrode formed on the capping layer and connected to the first thin film transistor through the first opening and the through hole,

wherein the second opening is separated from the first opening,

wherein the second opening is covered with the pixel electrode,

wherein a part of the pixel electrode that covers the second opening directly contacts the capping layer and the color filter.

13. A thin film transistor array panel comprising:

a substrate;

a first thin film transistor formed on the substrate;

a color filter formed on the first thin film transistor and having a through hole;

a capping layer formed on the color filter, and comprising a first opening and a second opening;

a pixel electrode formed on the capping layer and connected to the first thin film transistor through the first opening and the through hole; and

a plurality of second thin film transistors,

wherein the second opening is separated from the first opening,

wherein the second opening is covered with the pixel electrode,

wherein the pixel electrode comprises a first subpixel electrode connected to the first thin film transistor and a second subpixel electrode separated from the first subpixel electrode, and

wherein the second thin film transistors are connected to the second subpixel electrode.