IP Library Patent Application 13207951
Patent Application
App. No. 13/207,951

DISPLAY DEVICE

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Quick Facts
Patent No.
US None
App. No.
13/207,951
Abstract

An nMOS is used for a drive TFT and a display device is provided without being affected by variations in the threshold voltage of the drive TFT. A display device includes: a field-effect transistor that controls a drive current of a light emitting element; a first switch provided between a source of the field-effect transistor and an anode terminal of the light emitting element; a second switch provided between the source of the field-effect transistor and a signal line; a third switch provided between a drain of the field-effect transistor and a power supply line; a fourth switch provided between the drain and a gate of the field-effect transistor; a capacitor provided between the gate of the field-effect transistor and the anode terminal of the light emitting element; and a fifth switch provided between the anode terminal of the light emitting element and a predetermined voltage supply line.

Claims (28)

1 . A display device comprising:

a plurality of pixels arranged in a matrix, each of the pixels having a light emitting element;

a signal line that supplies a video signal voltage to each of the pixels according to a gray scale value;

a power supply line that supplies light emission cower to each of the light emitting elements; and

a predetermined voltage supply line that supplies a predetermined voltage to each of the pixels,

wherein each of the pixels includes:

a field-effect transistor that controls a drive current of the light emitting element;

a first switch provided between a source of the field-effect transistor and an anode terminal of the light emitting element;

a second switch provided between the source of the field-effect transistor and the signal line;

a third switch provided between a drain of the field-effect transistor and the power supply line;

a fourth switch provided between the drain and a gate of the field-effect transistor;

a capacitor provided between the gate of the field-effect transistor and the anode terminal of the light emitting element; and

a fifth switch provided between the anode terminal of the light emitting element and the predetermined voltage supply line.

2 . The display device according to claim 1 , wherein the field-effect transistor is an nMOS transistor.

3 . The display device according to claim 1 , wherein the first to fifth switches are nMOS transistors or pMOS transistors.

4 . The display device according to claim 3 , wherein the first to fifth switches are all nMOS transistors.

5 . The display device according to claim 1 , wherein the second switch and the third switch are connected to a common scanning line.

6 . The display device according to claim 1 , wherein the first switch and the fifth switch are connected to a common scanning line.

7 . The display device according to claim 1 , wherein the first switch, the fifth switch, and the fourth switch are connected to a common scanning line.

8 . The display device according to claim 1 , wherein the first switch and a third switch included in the adjacent pixel are connected to a common scanning line.

9 . The display device according to claim 1 , wherein the fifth switch and the forth switch are connected to a common scanning line.

10 . The display device according to claim 1 , wherein the predetermined voltage supply line is a scanning line of the first switch.

11 . The display device according to claim 1 , wherein the light emitting element is an organic light emitting diode.

12 . The display device according to claim 1 , wherein the field-effect transistor is a TFT.

13 . The display device according to claim 12 , wherein the TFT is a polycrystalline Si semiconductor device.

14 . The display device according to claim 12 , wherein the TFT is a microcrystalline Si semiconductor device.

15 . The display device according to claim 12 , wherein the TFT is an amorphous semiconductor device.

16 . The display device according to claim 12 , wherein the TFT is an oxide semiconductor device.

Assignments (3)
CHANGE OF NAME Recorded Jan 3, 2014
From: HITACHI DISPLAYS, LTD.
To: JAPAN DISPLAY EAST INC.
Reel/Frame 031888/0734 →
CHANGE OF NAME Recorded Jan 3, 2014
From: JAPAN DISPLAY EAST INC.
To: JAPAN DISPLAY INC.
Reel/Frame 031888/0794 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Aug 12, 2011
From: AKIMOTO, HAJIME; TSUKAHARA, MASAHISA; KAJIYAMA, KENTA
To: HITACHI DISPLAYS, LTD.; CANON KABUSHIKI KAISHA
Reel/Frame 026741/0776 →