Visible sensing transistor, display panel and manufacturing method thereof
View Patent ↗A display device includes an infrared sensing transistor and a visible sensing transistor. The visible sensing transistor includes a semiconductor on a substrate; an ohmic contact on the semiconductor; an etch stopping layer on the ohmic contact; a source electrode and a drain electrode on the etch stopping layer; a passivation layer on the source electrode and the drain electrode; and a gate electrode on the passivation layer. The etch stopping layer may be composed of the same material as the source electrode and the drain electrode. The infrared sensing transistor is similar to the visible sensing transistor except the etch stopping layer is absent.
1. A method for manufacturing a display panel, the method comprising:
forming a light blocking layer on a substrate;
forming an insulating layer on the light blocking layer;
forming a first semiconductor of a first light sensing transistor on the insulating layer, and a first ohmic contact pattern, a first etch stopping pattern, and a second etch stopping pattern on the first semiconductor;
forming a buffer layer on the insulating layer, a second semiconductor of a second light sensing transistor on the buffer layer, and a second ohmic contact pattern on the second semiconductor;
exposing the first etch stopping pattern by removing the second etch stopping pattern after forming the first ohmic contact pattern or the second ohmic contact pattern;
forming a source electrode and a drain electrode of the first light sensing transistor and a source electrode and a drain electrode of the second light sensing transistor on the first etch stopping pattern and the second ohmic contact pattern, respectively;
forming an etch stopping layer and a first ohmic contact by etching the first etch stopping pattern and the first ohmic contact pattern using the source electrode and the drain electrode of the first light sensing transistor as a mask; and
forming a second ohmic contact by etching the second ohmic contact pattern using the source electrode and the drain electrode of the second light sensing transistor as a mask,
wherein the first etch stopping pattern, the source electrode and the drain electrode of the first light sensing transistor, and the source electrode and the drain electrode of the second light sensing transistor are comprised of the same material, and
the first light sensing transistor and the second light sensing transistor are configured to sense different wavelengths.
2. The method of claim 1 , wherein the source electrode and the drain electrode of the first light sensing transistor and the source electrode and the drain electrode of the second light sensing transistor each comprise a bottom layer and an upper layer formed on the bottom layer.
3. The method of claim 2 , wherein the bottom layer comprises titanium, and the upper layer comprises copper.
4. The method of claim 3 , wherein the first etch stopping pattern comprises titanium, and the second etch stopping pattern comprises copper.
5. The method of claim 4 , wherein a sum of a thickness of the first etch stopping pattern and a thickness of the second etch stopping pattern is less than or equal to 500 Å.
6. The method of claim 5 , wherein the thickness of the first etch stopping pattern is less than or equal to 300 Å.
7. The method of claim 1 , wherein forming the second semiconductor and the second ohmic contact pattern on the second semiconductor comprises:
consecutively depositing the buffer layer, a first silicon layer, and a second silicon layer on the insulating layer;
forming a photoresist pattern on the second silicon layer; and
etching the second silicon layer, the first silicon layer, and the buffer layer using the photoresist pattern as a mask.
8. A method for manufacturing a display panel, the method comprising:
forming a light blocking layer on a substrate;
forming an insulating layer on the light blocking layer;
forming an amorphous silicon layer, a silicon layer comprising a conductive impurity, a first etch stopping layer and a second etch stopping layer on the insulating layer;
forming a photoresist pattern on the second etch stopping layer;
forming a second etch stopping pattern, a first etch stopping pattern, a first ohmic contact pattern, and a first semiconductor of a first light sensing transistor by etching the second etch stopping layer, the first etch stopping layer, the silicon layer, and the amorphous silicon layer using the photoresist pattern as a mask;
exposing the first etch stopping pattern by removing the second etch stopping pattern;
forming a buffer layer on the insulating layer, a second semiconductor of a second light sensing transistor on the buffer layer, and a second ohmic contact pattern on the second semiconductor;
forming a source electrode and a drain electrode of the first light sensing transistor and a source electrode and a drain electrode of the second light sensing transistor on the first etch stopping pattern and the second ohmic contact pattern, respectively;
forming an etch stopping layer and a first ohmic contact by etching the first etch stopping pattern and the first ohmic contact pattern using the source electrode and the drain electrode of the first light sensing transistor as a mask; and
forming a second ohmic contact by etching the second ohmic contact pattern using the source electrode and the drain electrode of the second light sensing transistor as a mask,
wherein the first etch stopping pattern, the source electrode and the drain electrode of the first light sensing transistor, and the source electrode and the drain electrode of the second light sensing transistor are comprised of the same material.
9. The method of claim 8 , wherein the source electrode and the drain electrode of the first light sensing transistor and the source electrode and the drain electrode of the second light sensing transistor each comprise a bottom layer and an upper layer formed on the bottom layer.
10. The method of claim 9 , wherein the bottom layer comprises titanium, and the upper layer comprises copper.
11. The method of claim 10 , wherein the first etch stopping pattern comprises titanium, and the second etch stopping pattern comprises copper.
12. The method of claim 11 , wherein a sum of a thickness of the first etch stopping pattern and a thickness of the second etch stopping pattern is less than or equal to 500 Å.
13. The method of claim 12 , wherein the thickness of the first etch stopping pattern is less than or equal to 300 Å.
14. A method for manufacturing a display panel, the method comprising:
forming a light blocking layer on a substrate;
forming an insulating layer on the light blocking layer;
forming a first semiconductor of a first light sensing transistor on the insulating layer;
forming a first ohmic contact pattern, a first etch stopping pattern, and a second etch stopping pattern on the first semiconductor;
forming a buffer layer on the insulating layer, a second semiconductor of a second light sensing transistor on the buffer layer, and a second ohmic contact pattern on the second semiconductor;
exposing the first etch stopping pattern by removing the second etch stopping pattern after forming the second ohmic contact pattern;
forming a source electrode and a drain electrode of the first light sensing transistor and a source electrode and a drain electrode of the second light sensing transistor on the first etch stopping pattern and the second ohmic contact pattern, respectively;
forming an etch stopping layer and a first ohmic contact by etching the first etch stopping pattern and the first ohmic contact pattern using the source electrode and the drain electrode of the first light sensing transistor as a mask; and
forming a second ohmic contact by etching the second ohmic contact pattern using the source electrode and the drain electrode of the second light sensing transistor as a mask,
wherein the first etch stopping pattern, the source electrode and the drain electrode of the first light sensing transistor, and the source electrode and the drain electrode of the second light sensing transistor are comprised of the same material.
15. The method of claim 14 , wherein the source electrode and the drain electrode of the first light sensing transistor and the source electrode and the drain electrode of the second light sensing transistor each comprise a bottom layer and an upper layer formed on the bottom layer.
16. The method of claim 15 , wherein the bottom layer comprises titanium, and the upper layer comprises copper.
17. The method of claim 16 , wherein the first etch stopping pattern comprises titanium, and the second etch stopping pattern comprises copper.
18. The method of claim 17 , wherein a sum of a thickness of the first etch stopping pattern and a thickness of the second etch stopping pattern is less than or equal to 500 Å.
19. The method of claim 18 , wherein the thickness of the first etch stopping pattern is less than or equal to 300 Å.