Photovoltaic device with oxide layer

1. A method of manufacturing a photovoltaic device, the method comprising:

depositing an amorphous oxide material comprising cadmium and tin over a substrate, wherein the substrate is heated during the deposition of the amorphous oxide material to form cadmium and tin oxide nano- or micro-crystallites in the amorphous oxide material;

depositing a semiconductor material over the amorphous oxide material; and,

transforming the amorphous oxide material into a substantially crystalline transparent conductive oxide during or after deposition of the semiconductor material, wherein the cadmium and tin nano- or micro-crystallites serve as seeds or nuclei during transformation.

2. A method as in claim 1 , wherein the depositing of the amorphous oxide material comprises depositing cadmium and tin in an atmosphere comprising oxygen.

3. A method as in claim 2 , wherein the atmosphere further includes argon in a concentration of up to about 25%.

4. A method as in claim 2 , wherein the atmosphere further includes argon in an argon to oxygen gas ratio of about 5:1 or less.

5. A method as in claim 4 , wherein the argon to oxygen gas ratio is about 1:5 or greater.

6. A method as in claim 3 , wherein the argon gas has a concentration up to about 5%.

7. A method as in claim 1 , further comprising forming a barrier material between the substrate and the amorphous oxide material, the barrier material selected from the group consisting of aluminum doped silicon oxide, silicon oxide, silicon nitride, silicon oxy nitride and aluminum oxide.

8. The method of claim 7 , wherein forming the barrier material comprises sputtering a barrier material in an atmosphere comprising an oxygen and argon gas mix.

9. The method of claim 8 , wherein the oxygen and argon gas mix comprises an argon to oxygen gas ratio of about 5:1 or less.

10. The method of claim 8 , wherein the oxygen and argon gas mix comprises an argon to oxygen gas ratio of about 1:5 or more.

11. The method of claim 7 , wherein forming the barrier material comprises sputtering an aluminum-doped silicon oxide or a silicon oxide.

12. The method of claim 7 , wherein forming the barrier material comprises sputtering a barrier material that is substantially free of optical absorptions.

13. A method as in claim 1 , further comprising forming a buffer material over the amorphous oxide material before deposition of the semiconductor material, the buffer material comprising a material selected from the group consisting of tin oxide, indium oxide, zinc oxide, and zinc tin oxide.

14. The method of claim 13 , wherein forming the buffer material comprises sputtering a material selected from the group consisting of tin oxide, indium oxide, zinc oxide, and zinc tin oxide.

15. The method of claim 13 , wherein forming the buffer material comprises sputtering a buffer material in an atmosphere comprising oxygen gas.

16. The method of claim 15 , wherein the atmosphere comprises more than about 50% oxygen.

17. The method of claim 1 , further comprising exposing the amorphous oxide material to a first zone temperature prior to deposition of a cadmium sulfide material, wherein the cadmium sulfide material is part of the semiconductor material.

18. The method of claim 17 , wherein the first zone temperature is set to about 600° C.

19. The method of claim 17 , wherein forming a semiconductor material comprises exposing the amorphous oxide material to a second zone temperature during or after deposition of the cadmium sulfide material.

20. The method of claim 19 , wherein the second zone temperature comprises a range of about 600° C. to about 650° C.

21. The method of claim 1 , wherein deposition of the semiconductor material occurs in an oxygen-depleted environment.

22. The method of claim 21 , wherein the oxygen-depleted environment is provided by deposition of a cadmium sulfide layer as part of the semiconductor material.

23. The method of claim 1 , wherein depositing an amorphous oxide material comprises sputtering an amorphous material of cadmium and tin in an atmosphere comprising an argon and oxygen gas mix.

24. The method of claim 23 , wherein the atmosphere comprises about 0% to about 25% argon gas.

25. The method of claim 1 , wherein the transforming occurs during deposition of the semiconductor material.

26. A method as in claim 25 , wherein the deposition of the semiconductor material occurs within a temperature range of about 550° C. to about 650° C.

27. The method of claim 1 , wherein the transforming comprises transporting a vapor.

28. The method of claim 1 , wherein the transforming occurs during close space sublimation to form a semiconductor material bi-layer.

29. The method of claim 1 , wherein depositing an amorphous oxide material comprises sputtering an amorphous layer of cadmium and tin.

30. The method of claim 1 , wherein depositing an amorphous oxide material comprises sputtering an amorphous material of cadmium and tin from a sputter target comprising a cadmium to tin ratio of about 2:1 in an atmosphere comprising oxygen gas.

31. The method of claim 1 , wherein depositing the semiconductor material comprises:

forming a semiconductor bi-layer comprising the steps of:

transporting a stack comprising the substrate and amorphous oxide material to a first deposition zone;

forming a cadmium sulfide layer on the stack at the first deposition zone;

transporting the stack from the first deposition zone to a second deposition zone; and

forming a cadmium telluride layer on the cadmium sulfide layer at the second deposition zone;

wherein the transforming step occurs during the forming of the semiconductor bi-layer.

32. The method of claim 1 , wherein the semiconductor material comprises a cadmium telluride material adjacent to a cadmium sulfide material.

33. A method as in claim 1 , wherein the amorphous oxide material is formed in a manner which produces nano- or micro-crystallites in the amorphous oxide material but which does not form a substantially crystalline material.

34. A method of manufacturing a photovoltaic module, the method comprising:

fabricating a plurality of photovoltaic cells, the fabricating comprising:

forming a barrier layer over a substrate, the barrier layer comprising a material selected from the group consisting of aluminum-doped silicon oxide, silicon oxide, silicon nitride, silicon oxynitride, and aluminum oxide;

forming an amorphous oxide layer over the barrier layer, wherein the amorphous oxide layer comprises cadmium and tin and wherein the substrate is heated during the forming of the amorphous oxide layer to form cadmium and tin oxide nano- or micro-crystallites in the amorphous oxide layer;

forming a buffer layer over the amorphous oxide layer including the formed crystallites, the buffer layer comprising a material selected from the group consisting of tin oxide, indium oxide, zinc oxide, and zinc tin oxide;

forming a semiconductor layer over the buffer layer; and,

transforming the amorphous oxide layer into a crystalline transparent conductive oxide layer, during or after deposition of the semiconductor layer over the buffer layer, wherein the cadmium and tin oxide nano- or micro-crystallites serve as seeds or nuclei during transformation;

connecting the plurality of the photovoltaic cells; and

depositing a back cover over the plurality of photovoltaic cells.