Semiconductor structure and organic electroluminescence device
A semiconductor structure and an organic electroluminescence device applying the same are provided. A gate insulating layer covers a gate electrode disposed on a substrate. A channel layer has a channel length L along a channel direction and has a first side and a second side opposite to the first side. The channel layer is located on the gate insulating layer over the gate electrode. A source electrode and a drain electrode are located at and electrically connected to the first side and the second side of the channel layer, respectively. A conductive light-shielding pattern layer is disposed on a dielectric layer covering the source electrode, the drain electrode and the channel layer, and is overlapped to a portion of the source electrode and a portion of the channel layer in a vertical projection. The conductive light-shielding pattern layer and the channel layer have an overlapping length d 1 , and 0.3≦d 1 /L≦0.85.
1. A semiconductor structure, disposed on a substrate, and comprising:
a gate electrode, disposed on the substrate;
a gate insulating layer, disposed on the substrate, and covering the gate electrode;
a channel layer, disposed on the gate insulating layer and located above the gate electrode, wherein the channel layer has a channel length L along a channel direction and has a first side and a second side opposite to the first side;
a source electrode and a drain electrode, located at the two opposite sides of the channel layer, and electrically connected to the first side and the second side of the channel layer, respectively;
a dielectric layer, covering the source electrode, the drain electrode and the channel layer; and
a conductive light-shielding pattern layer, disposed on the dielectric layer, and overlapped to a portion of the source electrode and a portion of the channel layer in a vertical projection, wherein the conductive light-shielding pattern layer does not overlap to the drain in the vertical projection, and the conductive light-shielding pattern layer and the channel layer have an overlapping length d 1 , and 0.3≦d 1 /L≦0.85.
2. The semiconductor structure as claimed in claim 1 , wherein a material of the channel layer comprises oxide semiconductor.
3. The semiconductor structure as claimed in claim 2 , wherein the oxide semiconductor comprises indium gallium zinc oxide (IGZO).
4. The semiconductor structure as claimed in claim 1 , wherein the conductive light-shielding pattern layer has a third side and a fourth side along the channel direction, the fourth side is overlapped to the channel layer in the vertical projection, wherein the overlapping length d 1 is equal to a distance between the fourth side and the first side of the channel layer along the channel direction.
5. The semiconductor structure as claimed in claim 1 , wherein the channel layer covers a portion of the source electrode and a portion of the drain electrode.
6. The semiconductor structure as claimed in claim 1 , wherein the source electrode and the drain electrode respectively cover a portion of the channel layer.
7. The semiconductor structure as claimed in claim 6 , further comprising an etching stop layer disposed on the channel layer, wherein the source electrode and the drain electrode respectively cover a portion of the etching stop layer.
8. The semiconductor structure as claimed in claim 6 , wherein the drain electrode has a fifth side along the channel direction, wherein the fifth side is overlapped to the channel layer, and the fifth side and the second side are spaced by a distance t 1 along the channel direction, and 0<t 1 /L<0.15.
9. An organic electroluminescence device, disposed on a substrate, and comprising:
a gate electrode, disposed on the substrate;
a gate insulating layer, disposed on the substrate, and covering the gate electrode;
a channel layer, disposed on the gate insulating layer and located above the gate electrode, wherein the channel layer has a channel length L along a channel direction and has a first side and a second side opposite to the first side;
a source electrode and a drain electrode, located at the two opposite sides of the channel layer, and electrically connected to the first side and the second side of the channel layer, respectively;
a dielectric layer, covering the source electrode, the drain electrode and the channel layer;
a conductive light-shielding pattern layer, disposed on the dielectric layer, and overlapped to a portion of the source electrode and a portion of the channel layer in a vertical projection, wherein the conductive light-shielding pattern layer does not overlap to the drain in the vertical projection, and the conductive light-shielding pattern layer and the channel layer have an overlapping length d 1 , and 0.3≦d 1 /L≦0.85;
a lower electrode, disposed on the dielectric layer and electrically connected to the drain electrode;
an organic light emitting layer, disposed on the lower electrode; and
an upper electrode, disposed on the organic light emitting layer.
10. The organic electroluminescence device as claimed in claim 9 , wherein a material of the channel layer comprises oxide semiconductor.
11. The organic electroluminescence device as claimed in claim 10 , wherein the oxide semiconductor comprises indium gallium zinc oxide (IGZO).
12. The organic electroluminescence device as claimed in claim 9 , wherein the conductive light-shielding pattern layer has a third side and a fourth side along the channel direction, the fourth side is overlapped to the channel layer in the vertical projection, wherein the overlapping length d 1 is equal to a distance between the fourth side and the first side of the channel layer along the channel direction.
13. The organic electroluminescence device as claimed in claim 9 , wherein the channel layer covers a portion of the source electrode and a portion of the drain electrode.
14. The organic electroluminescence device as claimed in claim 9 , wherein the source electrode and the drain electrode respectively cover a portion of the channel layer.
15. The organic electroluminescence device as claimed in claim 14 , further comprising an etching stop layer disposed on the channel layer, wherein the source electrode and the drain electrode respectively cover a portion of the etching stop layer.
16. The organic electroluminescence device as claimed in claim 14 , wherein the drain electrode has a fifth side along the channel direction, wherein the fifth side is overlapped to the channel layer, and the fifth side and the second side are spaced by a distance t 1 along the channel direction, and 0<t 1 /L<0.15.
17. The semiconductor structure as claimed in claim 1 , wherein the conductive light-shielding pattern layer and the drain electrode are spaced by a distance along the channel direction in the vertical projection.
18. The organic electroluminescence device as claimed in claim 9 , wherein the conductive light-shielding pattern layer and the drain electrode are spaced by a distance along the channel direction in the vertical projection.