Light-emitting device and method for manufacturing the same
View Patent ↗A light-emitting device and method for manufacturing the same are described. A method for manufacturing a light-emitting device comprising steps of: providing a growth substrate, wherein the growth substrate has a first surface and a second surface; forming a light-absorbable layer on the first surface of the growth substrate; forming an illuminant epitaxial structure on the light absorbable layer; providing a laser beam and irradiating the second surface of the growth substrate, wherein the laser beam wavelength is greater than 1000 nm; and removing the growth substrate.
1. A method for manufacturing a light-emitting device comprising steps of:
providing a growth substrate, wherein the growth substrate has a first surface and a second surface;
forming a light-absorbable layer on the first surface of the growth substrate, wherein the band-gap of the light-absorbable layer is smaller than 1.24 eV;
forming an illuminant epitaxial structure on the light absorbable layer;
providing a laser beam and irradiating the second surface of the growth substrate, wherein the wavelength of the laser beam is greater than 1000 nm; and
removing the growth substrate.
2. The method according to claim 1 , further comprising absorbing the energy of the laser beam and decomposing the material in the interface between the growth substrate and the light-absorbable layer or in the light-absorbable layer.
3. The method according to claim 2 , further comprising removing the light-absorbable layer by wet etching with a solution of HCl and KOH.
4. The method according to claim 1 , wherein forming the illuminant epitaxial structure comprises steps of:
forming a first conductivity type group III-V compound semiconductor layer on the light absorbable layer;
forming an active layer on the first conductivity type group III-V compound semiconductor layer; and
forming a second conductivity type group III-V compound semiconductor layer on the active layer.
5. The method according to claim 4 , wherein the first conductivity type group III-V compound semiconductor layer is n-type AlGaInP series material, the active layer is AlGaInP series material, and the second conductivity type group III-V compound semiconductor layer is p-type AlGaInP series material.
6. The method according to claim 1 , further comprising forming a window layer on the illuminant epitaxial structure.
7. The method according to claim 6 , wherein the thickness of the window layer is greater than 20 μm.
8. The method according to claim 6 , wherein the thickness of the window layer is smaller than 5 μm.
9. The method according to claim 6 , further comprising providing a permanent substrate on the window layer.
10. The method according to claim 9 , further comprising forming a bonding layer between the window layer and the permanent substrate.
11. The method according to claim 10 , wherein the material of the bonding layer may be Al, Au, Pt, Zn, Ag, Ni, Ge, In, Sn, Ti, Pb, Cu, Pd, or alloys of the aforementioned metals; silver glue, spontaneous conductive polymer, polymer materials mixed with conductive materials, or Anisotropic Conductive Glue.
12. The method according to claim 9 , wherein the permanent substrate comprises a conductive material or a non-conductive material.
13. The method according to claim 1 , wherein the wavelength of the light-absorbable layer is greater than 1000 nm.
14. The method according to claim 1 , wherein the removed growth substrate is reusable.
15. The method according to claim 1 , wherein the growth substrate is a GaAs substrate.
16. The method according to claim 15 , wherein the thickness of the GaAs substrate is greater than 100 μm.