NITRIDE SEMICONDUCTOR LIGHT EMITTING DEVICE AND MANUFACTURING METHOD OF THE SAME
There is provided a nitride semiconductor light emitting device and a manufacturing method of the same. The nitride semiconductor light emitting device including: a substrate for growing a nitride single crystal, the substrate having electrical conductivity; a p-type nitride semiconductor layer formed on the substrate; an active layer formed on the p-type nitride semiconductor layer, the active layer including a plurality of quantum barrier layers and a plurality of quantum well layers deposited alternately on each other; an n-type nitride semiconductor layer formed on the active layer; a p-electrode formed on a bottom of the substrate; and an n-electrode formed on a top of the n-type nitride semiconductor layer.
1 - 11 . (canceled)
12 . A method of manufacturing a nitride semiconductor light emitting device, the method comprising:
providing a substrate for growing a nitride single crystal, the substrate having electrical conductivity;
growing a p-type nitride semiconductor layer on the substrate;
growing an active layer on the p-type nitride semiconductor layer, the active layer comprising a plurality of quantum barrier layers and a plurality of quantum well layers deposited alternately on each other;
growing an n-type nitride semiconductor layer on the active layer;
forming a p-electrode on a bottom of the substrate; and
forming an n-electrode on a top of the n-type nitride semiconductor layer.
13 . The method of claim 12 , wherein the substrate is a p-type GaN substrate.
14 . The method of claim 13 , wherein the p-type GaN substrate has a doping concentration of 1×10 17 to 9×10 19 /cm 3 .
15 . The method of claim 13 , wherein the p-type GaN substrate has a thickness of about 50 to 100 nm.
16 . The method of claim 12 , wherein the p-type nitride semiconductor layer comprises a p-type AlGaN layer formed on the substrate to have an interface contacting the active layer.
17 . The method of claim 16 , wherein the p-type nitride semiconductor layer comprises a p-type GaN layer formed on an interface contacting a top of the substrate.
18 . The method of claim 16 , wherein among the quantum barrier layers, a quantum barrier layer having an interface contacting the p-type AlGaN layer is formed of an undoped GaN layer.
19 . The method of claim 18 , wherein the undoped GaN layer has a thickness of 2 to 10 nm.
20 . The method of claim 12 , wherein the n-type nitride semiconductor layer is formed of n-type GaN.
21 . The method of claim 12 , wherein the n-type nitride semiconductor layer has a thickness of 2 to 500 nm.
22 . The method of claim 12 , further comprising: forming a reflective metal layer between the substrate and the p-electrode.
23 . The method of claim 12 , wherein the p-type nitride semiconductor layer is grown at a temperature of 950° C. or higher.
24 . The method of claim 12 , wherein the p-type nitride semiconductor layer is grown at a temperature of 1000 to 1200° C.
25 . The method of claim 12 , wherein the un-doped GaN layer is grown at a temperature of 950° C. or higher.
26 . The method of claim 12 , wherein the p-type nitride semiconductor layer is directly heat-treated in a reactor.
27 . The method of claim 12 , further comprising: polishing the substrate after all of the layers are grown.
28 . The method of claim 12 , wherein the polishing the substrate is performed after the forming an n-electrode and before the forming a p-electrode.