Organic light-emitting display apparatus and method of manufacturing the same

1. An organic light-emitting display apparatus comprising:

a substrate comprising a display surface;

a black matrix layer formed over the substrate;

an insulating layer formed on and contacting the black matrix layer;

a thin film transistor (TFT) formed over the insulating layer and comprising an active layer comprising polysilicon;

a pixel electrode connected to the TFT;

an organic layer formed over the pixel electrode and comprising an emitting layer configured to emit light through a light emitting area of a pixel, the light emitting area being defined by the black matrix layer and generally corresponding to the emitting layer when viewed in a direction perpendicular to the display surface; and

at least one hole formed in at least one of the black matrix layer and the insulating layer in a region other than the light emitting area of the pixel such that the black matrix layer and the insulating layer do not contact with each other in at least one location where the at least one hole is provided.

2. The organic light-emitting display apparatus of claim 1 , wherein the black matrix layer is covered by the insulating layer.

3. The organic light-emitting display apparatus of claim 1 , wherein the active layer overlaps the black matrix layer.

4. The organic light-emitting display apparatus of claim 1 , wherein the at least one hole extends through the black matrix layer so as to divide the black matrix layer into pieces in a cross-section of the apparatus taken in a plane perpendicular to the display surface.

5. The organic light-emitting display apparatus of claim 1 , wherein the black matrix layer comprises a first sub-layer of a first material that is an insulating material, and a second sub-layer of a second material that is a metal.

6. The organic light-emitting display apparatus of claim 5 , wherein the first material comprises at least one selected from the group consisting of SiOx, SiNx, CrOx, NiOx, FeOx (x≧1), Al 2 O 3 , SnO 2 , indium tin oxide (ITO), indium zinc oxide (IZO), ZnO, and In 2 O 3 .

7. The organic light-emitting display apparatus of claim 5 , wherein the second material comprises at least one selected from the group consisting of chromium (Cr), nickel (Ni), iron (Fe), cobalt (Co), vanadium (V), titanium (Ti), aluminum (Al), silver (Ag), silicon (Si), germanium (Ge), yttrium (Y), zinc (Zn), zirconium (Zr), tungsten (W), tantalum (Ta), copper (Cu), and platinum (Pt).

8. The organic light-emitting display apparatus of claim 1 , wherein the black matrix layer comprises at least one selected from the group consisting of CrOx/Cr, NiOx/Ni, and FeOx/Fe.

9. The organic light-emitting display apparatus of claim 1 , wherein a thickness of the black matrix layer is from about 1000 Å to about 4000 Å.

10. The organic light-emitting display apparatus of claim 1 , wherein the insulating layer comprises SiOx (x>1).

11. The organic light-emitting display apparatus of claim 1 , wherein a thickness of the insulating layer is from about 1000 Å to about 4000 Å.

12. The organic light-emitting display apparatus of claim 1 , further comprising another active layer, and

wherein the at least one hole is disposed between the active layers.