Solid-state imaging device, manufacturing method thereof, and electronic apparatus

1. A solid-state imaging device comprising

pixels each including a hybrid photoelectric conversion portion and pixel transistors, wherein:

the hybrid photoelectric conversion portion includes (a) a semiconductor layer having a p-n junction, (b) a plurality of columnar or cylindrical hollow-shaped organic material layers disposed in the semiconductor layer, and (c) a pair of electrodes between which are disposed the semiconductor layer and the organic material layers;

charges generated in the organic material layers through photoelectric conversion move inside the semiconductor layer so as to be guided to a charge accumulation region; and

the solid-state imaging device is configured as a back-illuminated type in which light is incident from a surface facing away from the surface on which the pixel transistors are formed.

2. The solid-state imaging device according to claim 1 , wherein photoelectric conversion portions of blue, green, and red pixels are comprised of the hybrid photoelectric conversion portion.

3. The solid-state imaging device according to claim 1 , wherein in the hybrid photoelectric conversion portion, a self-assembled molecular film is at the interface between the organic material layer and the semiconductor layer.

4. The solid-state imaging device according to claim 1 , wherein the interface between the organic material layer and the semiconductor layer has a concavo-convex shape.

5. The solid-state imaging device according to claim 1 comprising blue, green and red pixels, wherein:

a photoelectric conversion portion of the blue pixel is comprised of the semiconductor layer having the p-n junction, and

photoelectric conversion portions of the green and red pixels are comprised of the hybrid photoelectric conversion portion.

6. The solid-state imaging device according to claim 1 comprising blue, green and red pixels, wherein:

a photoelectric conversion portion of the blue pixel is comprised of the semiconductor layer having the p-n junction,

the green and red pixels which are identically configured and photoelectric conversion portions of the green and red pixels are comprised of the hybrid photoelectric conversion portion,

in each of the green and red pixels, two kinds of organic material layers sensitive to green and red light are stacked so as to be separated in the thickness direction of the semiconductor layer, and

charges generated in the two kinds of organic material layers move inside the different semiconductor layers.

7. The solid-state imaging device according to claim 1 comprising blue, green and red pixels, wherein:

the blue, green, and red pixels are identically configured and photoelectric conversion portions of the blue, green and red pixels are comprised of the hybrid photoelectric conversion portion,

in each of the blue, green and red pixels, three kinds of organic material layers sensitive to blue, green, and red light are stacked so as to be separated in the thickness direction of the semiconductor layer, and

charges generated in the three kinds of organic material layers move inside the different semiconductor layers.

8. The solid-state imaging device according to claim 5 , wherein in the hybrid photoelectric conversion portion, a self-assembled molecular film is formed at the interface between the organic material layer and the semiconductor layer.

9. The solid-state imaging device according to claim 8 , wherein the interface between the organic material layer and the semiconductor layer has a concavo-convex shape.

10. A method of manufacturing a solid-state imaging device, comprising:

forming a plurality of depthwise vertical holes in a semiconductor layer having a p-n junction corresponding to a pixel;

embedding an organic material layer into the vertical holes with an insulating film disposed on the bottom portions of the vertical holes;

forming a light shielding film on a rear surface of the semiconductor layer where light enters, excluding the organic material layer; and

disposing a pair of electrodes with the organic material layer and the semiconductor layer disposed therebetween to thereby form a hybrid photoelectric conversion portion,

wherein,

pixel transistors constituting the pixel are disposed on that electrode of the pair of electrodes that is disposed on a side of the semiconductor layer where no light enters with an insulating film disposed therebetween.

11. The method of manufacturing the solid-state imaging device according to claim 10 , wherein photoelectric conversion portions of blue, green, and red pixels are comprised of the hybrid photoelectric conversion portion.

12. The method of manufacturing the solid-state imaging device according to claim 10 , wherein in the hybrid photoelectric conversion portion, a self-assembled molecular film is at the interface between the organic material layer and the semiconductor layer.

13. The method of manufacturing the solid-state imaging device according to claim 10 , wherein in the forming the vertical holes, vertical holes having concavo-convex shaped inner walls are formed.

14. The method of manufacturing the solid-state imaging device according to claim 10 , wherein:

a photoelectric conversion portion of a blue pixel is comprised of the semiconductor layer having the p-n junction, and

wherein photoelectric conversion portions of green and red pixels are comprised of the hybrid photoelectric conversion portion.

15. The method of manufacturing the solid-state imaging device according to claim 10 , wherein:

a photoelectric conversion portion of a blue pixel is comprised of the semiconductor layer having the p-n junction,

green and red pixels which are identically configured and photoelectric conversion portions thereof are comprised of the hybrid photoelectric conversion portion,

in the green and red pixels, two kinds of organic material layers sensitive to green and red light are stacked so as to be separated in the thickness direction of the semiconductor layer, and

charges generated in the two kinds of organic material layers move inside the different semiconductor layers.

16. The method of manufacturing the solid-state imaging device according to claim 10 , wherein:

blue, green, and red pixels which are identically configured are comprised of the hybrid photoelectric conversion portion,

in the blue, green and red pixels, three kinds of organic material layers sensitive to blue, green, and red light are stacked so as to be separated in the thickness direction of the semiconductor layer, and

charges generated in the three kinds of organic material layers move inside the different semiconductor layers.

17. The method of manufacturing the solid-state imaging device according to claim 14 ,

wherein in the hybrid photoelectric conversion portion, a self-assembled molecular film is formed at the interface between the organic material layer and the semiconductor layer.

18. The method of manufacturing the solid-state imaging device according to claim 14 , wherein in the formation of the vertical holes, vertical holes having concavo-convex shaped inner walls are formed.

19. An electronic apparatus comprising:

a solid-state imaging device according to claim 1 ;

an optical system that guides incident light to a photoelectric conversion portion of the solid-state imaging device; and

a signal processing circuit that processes output signals of the solid-state imaging device.