Device and method for inspecting polycrystalline silicon layer
View Patent ↗A device for inspecting a polycrystalline silicon layer that is crystallized by receiving irradiated laser beams on a front side of the polycrystalline silicon layer includes: a light source configured to emit inspection beams to a rear side of the polycrystalline silicon layer; a light inspector configured to inspect the inspection beams reflected at the rear side of the polycrystalline silicon layer; and a controller that controls the light source and the light inspector.
1. A device for inspecting a polycrystalline silicon layer that is crystallized by receiving irradiated laser beams on a front side of the polycrystalline silicon layer, the device comprising:
a light source configured to emit inspection beams to a rear side of the polycrystalline silicon layer, wherein the front side of the polycrystalline silicon layer includes a plurality of crystallized protrusions;
a light inspector configured to inspect the inspection beams reflected on the polycrystalline silicon layer; and
a controller for controlling the light source and the light inspector.
2. The device as claimed in claim 1 , wherein
the rear side of the polycrystalline silicon layer contacts a buffer layer or a substrate and is parallel with the buffer layer or substrate.
3. The device as claimed in claim 2 , wherein
the polycrystalline silicon layer is crystallized starting from the front side, and
an area near the rear side of the polycrystalline silicon layer is in an amorphous or microcrystalline state.
4. The device as claimed in claim 2 , wherein
the laser beams crystallizing the polycrystalline silicon layer are excimer laser beams.
5. The device as claimed in claim 2 , wherein
the buffer layer or the substrate is made of a material including silicon.
6. The device as claimed in claim 2 , wherein
the buffer layer or the substrate, together with the polycrystalline silicon layer, has transmittance that is greater than 5%.
7. The device as claimed in claim 1 , wherein
the polycrystalline silicon layer has a thickness within the range of 10 nm to 300 nm.
8. The device as claimed in claim 1 , wherein
the inspection beams include at least one of ultraviolet (UV) rays, infrared rays, and laser beams.
9. The device as claimed in claim 8 , wherein
a wavelength with a reflective index that is less than 50% from among the inspection beams in the polycrystalline silicon layer is used for measurement.
10. The device as claimed in claim 8 , wherein
a wavelength for measuring the polycrystalline silicon layer from among the inspection beams is greater than 385 nm and equal to or less than 410 nm.
11. The device as claimed in claim 8 , wherein
the polycrystalline silicon layer is measured by at least one of reflectivity measurement, Raman spectroscopy, and spectroscopic ellipsometry.
12. A method for inspecting a polycrystalline silicon layer that is crystallized by receiving irradiated laser beams on a front side of the polycrystalline silicon layer, the method comprising:
emitting inspection beams to a rear side of the polycrystalline silicon layer, wherein the front side of the polycrystalline silicon layer includes a plurality of crystallized protrusions; and
inspecting and analyzing the inspection beams reflected on the polycrystalline silicon layer.
13. The method as claimed in claim 12 , wherein
the rear side of the polycrystalline silicon layer contacts a buffer layer or a substrate and is parallel with the buffer layer or substrate.
14. The method as claimed in claim 13 , wherein
the polycrystalline silicon layer is crystallized starting from the front side, and
an area near the rear side of the polycrystalline silicon layer is in an amorphous or microcrystalline state.
15. The method as claimed in claim 13 , wherein
the laser beams crystallizing the polycrystalline silicon layer are excimer laser beams.
16. The method as claimed in claim 13 , wherein
the buffer layer or the substrate is made of a material including silicon.
17. The method as claimed in claim 13 , wherein
the buffer layer or the substrate, together with the polycrystalline silicon layer, has transmittance that is greater than 5%.
18. The method as claimed in claim 12 , wherein
the polycrystalline silicon layer has a thickness within the range of 10 nm to 300 nm.
19. The method as claimed in claim 12 , wherein
the inspection beams include at least one of ultraviolet (UV) rays, infrared rays, and laser beams.
20. The method as claimed in claim 19 , wherein
a wavelength with a reflective index that is less than 50% from among the inspection beams in the polycrystalline silicon layer is used for measurement.
21. The method as claimed in claim 19 , wherein
a wavelength used to measure the polycrystalline silicon layer from among the inspection beams is greater than 385 nm and equal to or less than 410 nm.
22. The method as claimed in claim 19 , wherein
the polycrystalline silicon layer is measured by using at least one of reflectivity measurement, Raman spectroscopy, and spectroscopic ellipsometry.