Materials, systems and methods for optoelectronic devices
A photodetector is described along with corresponding materials, systems, and methods. The photodetector comprises an integrated circuit and at least two optically sensitive layers. A first optically sensitive layer is over at least a portion of the integrated circuit, and a second optically sensitive layer is over the first optically sensitive layer. Each optically sensitive layer is interposed between two electrodes. The two electrodes include a respective first electrode and a respective second electrode. The integrated circuit selectively applies a bias to the electrodes and reads signals from the optically sensitive layers. The signal is related to the number of photons received by the respective optically sensitive layer.
1. A photodetector comprising:
a semiconductor substrate;
a photosensor array having a plurality of pixel regions, the pixel regions arranged into a plurality of rows and a plurality of columns, each of the plurality of pixel regions comprising at least one optically sensitive material over a portion of the semiconductor substrate;
pixel circuitry formed on the semiconductor substrate for each of the plurality of respective pixel regions, the pixel circuitry for each respective pixel region being configured to apply a voltage difference across the optically sensitive material for the respective pixel region and to read out a signal based on a flow of current through the optically sensitive material over a period of time with at least a portion of the pixel circuitry for a first respective pixel region formed under the optically sensitive material being configured for a different respective pixel region that is not read out by the pixel circuitry for the first respective pixel region;
first pixel circuitry for the first respective pixel region being formed in a first half of a first region of the semiconductor substrate and a first half of a second region of the semiconductor substrate; and
second pixel circuitry for a second respective pixel region being formed in a second half of the first region of the semiconductor substrate and a second half of the second region of the semiconductor substrate.
2. The photodetector of claim 1 , wherein the pixel circuitry for the first respective pixel region includes a plurality of circuit elements, wherein at least one circuit element is formed under both the optically sensitive material for the first respective pixel region and optically sensitive material for the different respective pixel region.
3. The photodetector of claim 1 , wherein the first region forms a first rectangular region on the semiconductor substrate and the second region forms a second rectangular region on the semiconductor substrate, wherein a first size of the first region and a first size of the second region are related by a first aspect ratio.
4. The photodetector of claim 3 , wherein the first aspect ratio is 1:1.
5. The photodetector of claim 3 , wherein the first aspect ratio is 2:3.
6. The photodetector of claim 3 , wherein the first aspect ratio is 3:4.
7. The photodetector of claim 3 , wherein the first pixel circuitry is substantially contained in a third rectangular region and the second pixel circuitry is substantially contained in a fourth rectangular region, wherein a third size of the third rectangular region and a fourth size of the fourth rectangular region are related by a second aspect ratio.
8. The photodetector of claim 7 , wherein the second aspect ratio is higher than the first aspect ratio.
9. The photodetector of claim 7 , wherein the second aspect ratio is more than two times the first aspect ratio.
10. A photodetector comprising:
a semiconductor substrate;
a photosensor array having a plurality of pixel regions, the pixel regions arranged into a plurality of rows and a plurality of columns, each of the plurality of pixel regions comprising at least one optically sensitive material over a portion of the semiconductor substrate;
pixel circuitry formed on the semiconductor substrate for each of the plurality of respective pixel regions, the pixel circuitry for each respective pixel region being configured to apply a voltage difference across the optically sensitive material for the respective pixel region and to read out a signal based on a level of light intensity absorbed by the optically sensitive layer for the respective pixel region; and with at least a portion of the pixel circuitry for a first respective pixel region formed under the optically sensitive material being configured for a different respective pixel region that is not read out by the pixel circuitry for the first respective pixel region;
first pixel circuitry for the first respective pixel region being formed in a first half of a first region of the semiconductor substrate and a first half of a second region of the semiconductor substrate; and
second pixel circuitry for a second respective pixel region being formed in a second half of the first region of the semiconductor substrate and a second half of the second region of the semiconductor substrate.
11. A photodetector comprising:
a semiconductor substrate;
a photosensor array having a plurality of pixel regions, the pixel regions arranged into a plurality of rows and a plurality of columns and including at least a first pixel region adjacent to a second pixel region;
each pixel region comprising at least one optically sensitive material over a portion of the semiconductor substrate, wherein the optically sensitive material for the first pixel region is over a first portion of the semiconductor substrate and the sensitive material for the second pixel region is over a second portion of the semiconductor substrate; and
pixel circuitry formed on the semiconductor substrate for each of the respective pixel regions, the pixel circuitry for each respective pixel region configured to apply a voltage difference across the optically sensitive material for the respective pixel region and to read out a signal based on a flow of current through the optically sensitive material over a period of time;
wherein the pixel circuitry for the first pixel region extends from the first portion of the semiconductor substrate to the second portion of the semiconductor substrate and the pixel circuitry for the second pixel region extends from the second portion of the semiconductor substrate to the first portion of the semiconductor substrate.
12. A photodetector comprising:
a semiconductor substrate;
a photosensor array having a plurality of pixel regions, the pixel regions arranged into a plurality of rows and a plurality of columns and including at least a first pixel region adjacent to a second pixel region;
each pixel region comprising at least one optically sensitive material over a portion of the semiconductor substrate, wherein the optically sensitive material for the first pixel region is over a first portion of the semiconductor substrate and the sensitive material for the second pixel region is over a second portion of the semiconductor substrate; and
pixel circuitry formed on the semiconductor substrate for each of the respective pixel regions, the pixel circuitry for each respective pixel region configured to apply a voltage difference across the optically sensitive material for the respective pixel region and to read out a signal based on a level of light intensity absorbed by the optically sensitive layer for the respective pixel region;
wherein the pixel circuitry for the first pixel region extends from the first portion of the semiconductor substrate to the second portion of the semiconductor substrate and the pixel circuitry for the second pixel region extends from the second portion of the semiconductor substrate to the first portion of the semiconductor substrate.