NITRIDE SEMICONDUCTOR DEVICE, NITRIDE SEMICONDUCTOR WAFER, AND METHOD FOR MANUFACTURING NITRIDE SEMICONDUCTOR LAYER
According to one embodiment, a nitride semiconductor device includes a foundation layer and the functional layer. The foundation layer is formed on an amorphous layer and includes aluminum nitride. The functional layer is formed on the foundation layer and includes a nitride semiconductor.
1 . A nitride semiconductor device, comprising:
a foundation layer formed on an amorphous layer and including aluminum nitride; and
a functional layer formed on the foundation layer and including a nitride semiconductor.
2 . The device according to claim 1 , wherein the functional layer includes:
a first semiconductor layer of a first conductivity type formed on the foundation layer and including a nitride semiconductor;
a light emitting part provided on the first semiconductor layer and including a plurality of barrier layers and a well layer provided between the barrier layers; and
a second semiconductor layer of a second conductivity type different from the first conductivity type, the second semiconductor layer being provided on the light emitting part and including a nitride semiconductor.
3 . The device according to claim 1 , wherein the amorphous layer is a layer of one of silicon oxide and amorphous silicon.
4 . The device according to claim 1 , wherein the amorphous layer is a layer of an amorphous metal.
5 . The device according to claim 1 , wherein the foundation layer is orientated in a direction perpendicular to a layer face of the foundation layer.
6 . The device according to claim 1 , wherein the foundation layer is provided on an orientation layer provided on the amorphous layer.
7 . The device according to claim 6 , wherein the orientation layer has one of a face-centered cubic lattice structure and a body-centered cubic lattice structure.
8 . A nitride semiconductor wafer, comprising:
a substrate;
an amorphous layer provided on the substrate;
a foundation layer provided on the amorphous layer and including aluminum nitride; and
a functional layer formed on the foundation layer and including a nitride semiconductor.
9 . The wafer according to claim 8 , wherein the amorphous layer is a layer of one of silicon oxide and amorphous silicon.
10 . The wafer according to claim 8 , wherein the foundation layer is orientated in a direction perpendicular to a layer face of the foundation layer.
11 . The wafer according to claim 8 , further comprising an orientation layer provided between the amorphous layer and the foundation layer.
12 . The wafer according to claim 11 , wherein the orientation layer has one of a face-centered cubic lattice structure or a body-centered cubic lattice structure.
13 . The wafer according to claim 8 , wherein the substrate is a silicon substrate.
14 . The wafer according to claim 8 , wherein the functional layer includes:
a first semiconductor layer of a first conductivity type formed on the foundation layer and including a nitride semiconductor;
a light emitting part provided on the first semiconductor layer and including a plurality of barrier layers and a well layer provided between the barrier layers; and
a second semiconductor layer of a second conductivity type different from the first conductivity type, the second semiconductor layer being provided on the light emitting part and including a nitride semiconductor.
15 . A method for manufacturing a nitride semiconductor layer, comprising:
forming an amorphous layer on a substrate;
forming a foundation layer including aluminum nitride on the amorphous layer; and
forming a functional layer including a nitride semiconductor on the foundation layer.
16 . The method according to claim 15 , wherein the forming the foundation layer includes:
forming an orientation layer on the amorphous layer; and
forming the foundation layer on the orientation layer.
17 . The method according to claim 16 , wherein the orientation layer has one of a face-centered cubic lattice structure or a body-centered cubic lattice structure.
18 . The method according to claim 15 , wherein the amorphous layer is a layer of one of silicon oxide and amorphous silicon.
19 . The method according to claim 15 , wherein the amorphous layer is a layer of an amorphous metal.
20 . The method according to claim 15 , wherein the foundation layer is orientated in a direction perpendicular to a layer face of the foundation layer.