PHOTOVOLTAIC DEVICE INTERCONNECT
Scribing and deposition processes can be used to interconnect cells within photovoltaic modules.
1 . A method for manufacturing a photovoltaic module, the method comprising:
forming a transparent conductive oxide layer adjacent to a substrate layer;
forming a first semiconductor layer adjacent to the transparent conductive oxide layer;
forming a second semiconductor layer adjacent to the first semiconductor layer; and
forming a sacrificial layer adjacent to the second semiconductor layer.
2 . The method of claim 1 , further comprising:
scribing a first trench extending from the sacrificial layer to the substrate layer.
3 . The method of claim 2 , further comprising:
depositing an insulating material in the first trench, wherein the insulating material extends from the substrate layer beyond the transparent conductive oxide layer.
4 . The method of claim 3 , further comprising:
scribing a second trench extending from the sacrificial layer to the transparent conductive oxide layer.
5 . The method of claim 4 , further comprising:
depositing a first conductive material in the second trench, wherein the first conductive material extends from the transparent conductive oxide layer toward the sacrificial layer.
6 . The method of claim 5 , further comprising:
removing the sacrificial layer thereby exposing the second semiconductor layer.
7 . The method of claim 6 , further comprising:
forming a back contact layer adjacent to the second semiconductor layer, wherein the back contact layer comprises a second conductive material.
8 . The method of claim 7 , further comprising:
scribing a third trench extending from the back contact layer to the second semiconductor layer.
9 . The method of claim 4 , further comprising:
removing the sacrificial layer thereby exposing the second semiconductor layer.
10 . The method of claim 9 , further comprising:
forming a lower conductive layer adjacent to the second semiconductor layer, wherein the lower conductive layer comprises a second conductive material.
11 . The method of claim 10 , further comprising:
forming an upper conductive layer adjacent to the lower conductive layer, wherein the upper conductive layer fills the second trench and comprises a first conductive material.
12 . The method of claim 1 , wherein the sacrificial layer comprises a material selected from the group consisting of aluminum, zinc, cadmium, cadmium oxide, tellurium oxide, and cadmium telluride.
13 . The method of claim 1 , wherein the transparent conductive oxide layer comprises a material selected from the group consisting of tin oxide and cadmium stannate.
14 . The method of claim 1 , wherein the first semiconductor layer comprises cadmium sulfide.
15 . The method of claim 1 , wherein the second semiconductor comprises a material selected from the group consisting of cadmium telluride and copper indium gallium (di)selenide.
16 . The method of claim 5 or 11 , wherein the first conductive material comprises a material selected from the group consisting of molybdenum nitride, copper, aluminum, and chromium.
17 . The method of claim 7 or 10 , wherein the second conductive material comprises a material selected from a group consisting of molybdenum nitride, copper, aluminum, and chromium.
18 . A multilayer structure comprising:
a transparent conductive oxide layer adjacent to a substrate layer;
a first semiconductor layer adjacent to the transparent conductive oxide layer;
a second semiconductor layer adjacent to the first semiconductor layer; and
a sacrificial layer adjacent to the second semiconductor layer.
19 . The multilayer structure of claim 18 , wherein the sacrificial layer comprises a material selected from the group consisting of aluminum, zinc, cadmium, cadmium oxide, tellurium oxide, and cadmium telluride.
20 . The multilayer structure of claim 18 , wherein the transparent conductive oxide layer comprises a material selected from the group consisting of tin oxide and cadmium stannate.
21 . The multilayer structure of claim 18 , wherein the first semiconductor layer comprises cadmium sulfide.
22 . The multilayer structure of claim 18 , wherein the second semiconductor comprises a material selected from the group consisting of cadmium telluride and copper indium gallium (di)selenide.
23 . A photovoltaic module comprising
a transparent conductive oxide layer adjacent to a substrate layer;
a first semiconductor layer adjacent to the transparent conductive oxide layer;
a second semiconductor layer adjacent to the first semiconductor layer;
a back contact layer adjacent to the second semiconductor layer, wherein the back contact layer comprises a second conductive material; and
a trench extending from the transparent conductive oxide layer to the back contact layer, wherein the trench is filled with a first conductive material.
24 . The photovoltaic module of claim 23 , wherein the first conductive material comprises a material selected from the group consisting of molybdenum nitride, copper, aluminum, and chromium.
25 . The photovoltaic module of claim 23 , wherein the second conductive material comprises a material selected from a group consisting of molybdenum nitride, copper, aluminum, and chromium.
26 . A photovoltaic module comprising
a transparent conductive oxide layer adjacent to a substrate layer;
a first semiconductor layer adjacent to the transparent conductive oxide layer;
a second semiconductor layer adjacent to the first semiconductor layer;
a lower conductive layer adjacent to the second semiconductor layer, wherein the lower conductive layer comprises a second conductive material;
an upper conductive layer adjacent to the lower conductive layer, wherein the upper conductive layer comprises a first conductive material; and
a trench extending from the transparent conductive oxide layer to the upper conductive layer, wherein the trench is filled with a first conductive material.
27 . The photovoltaic module of claim 26 , wherein the first conductive material comprises a material selected from the group consisting of molybdenum nitride, copper, aluminum, and chromium.
28 . The photovoltaic module of claim 26 , wherein the second conductive material comprises a material selected from a group consisting of molybdenum nitride, copper, aluminum, and chromium.