VAPOR DEPOSITION SYSTEM
A vapor deposition process can be used to create layers within a photovoltaic module.
1 . A vapor deposition apparatus comprising:
a chamber comprising an adjustable orifice; and
a vapor source mounted within the chamber.
2 . The apparatus of claim 1 , wherein the size of the adjustable orifice ranges from 3 mm to 50 mm.
3 . The apparatus of claim 1 , wherein the size of the adjustable orifice ranges from 5 mm to 20 mm.
4 . The apparatus of claim 1 , further comprising a feed port configured to provide melt material to the vapor source.
5 . The apparatus of claim 1 , further comprising one or more heating elements within a chamber wall.
6 . The apparatus of claim 1 , further comprising one or more heating elements within a vapor source wall.
7 . The apparatus of claim 1 , wherein the vapor source includes monolithic graphite.
8 . The apparatus of claim 1 , wherein the chamber includes monolithic graphite.
9 . The apparatus of claim 1 , wherein a conveyor system is mounted proximate to the adjustable orifice.
10 . The apparatus of claim 1 , further comprising a layer of high-temperature insulation adjacent to an outer surface of the chamber.
11 . The apparatus of claim 10 , further comprising a heat shield adjacent to the high temperature insulation.
12 . The apparatus of claim 10 , wherein the vapor source is mounted on a base.
13 . The apparatus of claim 12 , further comprising an actuator configured to move the vapor source relative to the chamber.
14 . The apparatus of claim 13 , wherein the size of the adjustable orifice is controlled by the position of the vapor source relative to the chamber.
15 . A method for manufacturing a film on a substrate, the method comprising:
heating a material in a chamber to produce a vaporized material;
determining the deposition rate of the vaporized material exiting an orifice in the chamber; and
adjusting the size of the orifice to produce a target deposition rate of the vaporized material.
16 . The method claim 15 , further comprising adjusting a temperature within the chamber to produce a target deposition rate.
17 . The method claim 15 , further comprising adjusting a pressure within the chamber to produce a target deposition rate.
18 . The method claim 15 , wherein determining the deposition rate comprises measuring a thickness of a material deposited on a substrate proximate to the orifice.
19 . The method of claim 15 , wherein adjusting the orifice size comprises moving a vapor source relative to the chamber.
20 . The method of claim 15 , wherein the size of the orifice is increased if the deposition rate is less than the target deposition rate.
21 . The method of claim 15 , wherein the size of the orifice is decreased if the deposition rate is greater than the target deposition rate.
22 . The method of claim 15 , wherein adjusting the orifice size comprises moving one or more shutters relative to the chamber.
23 . The method of claim 15 , wherein adjusting the orifice size comprises moving a shutter relative to the chamber, wherein the shutter has a sculpted edge.