Phased array antenna module and method of making same
A phased array antenna includes a semiconductor wafer, with radio frequency (RF) circuitry fabricated on top side of the semiconductor wafer. There is an array of antenna elements above the top side of the semiconductor wafer, and a coaxial coupling arrangement coupling the RF circuitry and the array of antenna elements. The coaxial coupling arrangement may include a plurality of coaxial connections, each having an outer conductor, an inner conductor, and a dielectric material therebetween. The dielectric material may be air.
1. A phased array antenna comprising:
a semiconductor wafer;
circuitry fabricated on a top side of said semiconductor wafer;
an array of phased array antenna elements above the top side of said semiconductor wafer; and
a coaxial coupling arrangement coupling said circuitry to said array of phased array antenna elements.
2. The phased array antenna of claim 1 , wherein said coaxial coupling arrangement comprises a plurality of coaxial connections, each comprising an outer conductor, an inner conductor, and a dielectric material therebetween.
3. The phased array antenna of claim 2 , wherein said dielectric material comprises air.
4. The phased array antenna of claim 1 , wherein said circuitry comprises RF circuitry.
5. The phased array antenna of claim 4 , wherein said RF circuitry comprises at least one of a low noise amplifier, a power amplifier, a phase shifter, a vector modulator, a time delay block, and a RF switch.
6. The phased array antenna of claim 1 , wherein said circuitry comprises digital circuitry.
7. The phased array antenna of claim 1 , wherein said semiconductor wafer has a plurality of conductive vias therein coupled to said circuitry; and further comprising a power combiner on a back side of said semiconductor wafer coupled to at least some of said plurality of conductive vias.
8. The phased array antenna of claim 7 , wherein said power combiner comprises a plurality of coaxial connections, each comprising an outer conductor, an inner conductor, and a dielectric therebetween.
9. The phased array antenna of claim 1 , wherein said semiconductor wafer comprises a semiconductor wafer with circuitry fabricated in SiGe BiCMOS or CMOS semiconductor fabrication processes on the top side.
10. The phased array antenna of claim 1 , further comprising a heat sink coupled to a back side of said semiconductor wafer.
11. A phased array antenna comprising:
a semiconductor wafer having a plurality of conductive vias therein;
circuitry fabricated on a top side of said semiconductor wafer and coupled to said plurality of conductive vias;
an array of antenna elements above the top side of said semiconductor wafer;
a plurality of coaxial connections between said circuitry and said array of antenna elements, each comprising an outer conductor, an inner conductor, and a dielectric material therebetween; and
a power combiner on a back side of said semiconductor wafer coupled to at least some of said plurality of conductive vias.
12. The phased array antenna of claim 11 , wherein said dielectric material comprises air.
13. The phased array antenna of claim 11 , wherein said circuitry comprises RF circuitry.
14. The phased array antenna of claim 13 , wherein said RF circuitry comprises at least one a low noise amplifier, a power amplifier, a phase shifter, a vector modulator, a time delay block, and an RF switch.
15. The phased array antenna of claim 11 , wherein said semiconductor wafer comprises a semiconductor wafer with circuitry fabricated in SiGe BiCMOS or CMOS semiconductor fabrication processes on the top side.
16. A method of making a phased array antenna comprising:
fabricating circuitry on a top side of a semiconductor wafer;
forming a coaxial coupling arrangement with the circuitry; and
positioning an array of phased array antenna elements above the top side of the semiconductor wafer and coupled to the circuitry via the coaxial coupling arrangement.
17. The method of claim 16 , wherein the circuitry comprises RF circuitry.
18. The method of claim 17 , further comprising forming a plurality of conductive vias in the semiconductor wafer and coupled to the RF circuitry; and further comprising integrating a power combiner on a back side of the semiconductor wafer coupled to at least some of the plurality of conductive vies.
19. The method of claim 18 , wherein the power combiner comprises a plurality of coaxial connections, each comprising an outer conductor, an inner conductor, and a dielectric material therebetween.
20. The method of claim 19 , wherein the dielectric comprises an air.
21. The method of claim 16 , further comprising coupling a heat sink to a back side of the semiconductor wafer.