Granted Patent B1

US 8,728,849 · App. 13/222,686 · Granted May 20, 2014

Abstract

Claims (31)

1. A method of laser cutting through dissimilar materials separated by a metal foil comprising:

providing a material stack that includes at least one semiconductor layer having a front surface, a back surface, and a metal foil layer attached to the back surface of the at least one semiconductor layer;

attaching the metal foil layer to an insulative support material layer;

selecting a laser parameter for a pulsed laser beam to create a kerf in the material stack to a depth of the metal foil layer and to remove metal from the metal foil layer through the kerf primarily by conversion of the metal to a gaseous phase rather than by melting, thereby reducing a production of metal slag and deposition thereof upon the semiconductor layer;

assisting removal of gasified or particulate debris produced by the pulsed laser beam cutting through the material stack;

changing the laser parameter for the pulsed laser beam to optimize for cutting the support material layer; and

dicing the material stack and the attached support material layer, using the pulsed laser beam with the selected laser parameter and the changed laser parameter.

2. The method of claim 1 wherein the laser parameter is a wavelength of the laser beam.

3. The method of claim 1 wherein selecting the laser parameter includes selecting a pulse width and further comprising matching the pulse width of the laser beam to a bond strength of the metal foil layer.

4. The method of claim 1 wherein selecting the laser parameter includes selecting a pulse width in a range of nanoseconds or narrower.

5. The method of claim 1 wherein selecting the laser parameter includes selecting an ultraviolet wavelength for creating the kerf.

6. The method of claim 1 wherein selecting the laser parameter includes selecting an average power of the pulsed laser beam.

7. The method of claim 1 wherein selecting the laser parameter includes selecting a pulse repetition rate.

8. The method of claim 1 wherein selecting the laser parameter includes selecting a single-pass cut and further comprising selecting a scan velocity such that the pulsed laser beam only just cuts through a back surface of the support material layer in the single-pass cut.

9. The method of claim 1 wherein selecting the laser parameter includes selecting a beam distribution and further comprising selecting a spot diameter so as to produce a width of the kerf that is narrower than a thickness of the material stack.

10. The method of claim 1 wherein assisting the removal of debris includes using an upside down mounting of the material stack so that gravity assists the removal of the debris.

11. The method of claim 1 wherein assisting the removal of debris includes using a gas flow or a vacuum directed to remove the debris.

12. The method of claim 1 wherein assisting the removal of debris includes applying a photoresist to the material stack prior to laser cutting and removing the photoresist and the debris thereupon after the laser cutting.

13. A method of laser dicing dissimilar materials separated by a metal foil comprising:

providing a semiconductor film that has semiconductor devices thereupon and has a front surface, a back surface and a metal layer attached to the back surface of the film;

laminating the film to a flexible substrate, using an adhesive layer to bond the flexible substrate to the metal layer backing the film;

forming a kerf by using a laser beam to remove respective material from the semiconductor film, the metal layer, the adhesive layer and the flexible substrate, with the respective material being removed from the metal layer primarily by conversion of metal to a gaseous phase, thereby reducing deposition of metal slag upon the semiconductor film in a debris field;

reducing the debris field during laser cutting of the metal layer; and

dicing the film, the metal layer, the adhesive layer and the flexible substrate by deepening the kerf.

14. The method of claim 13 wherein reducing the debris field includes using a pulse width of the laser beam in a femtosecond range and matched to a bond strength of the respective material of the metal layer.

15. The method of claim 13 wherein reducing the debris field includes using an inverted mounting of the semiconductor film, the metal layer, the adhesive layer and the flexible substrate such that the semiconductor film faces in a downward direction and debris falls in the downward direction, and further comprising aiming the laser beam in an upward direction towards the front surface of the semiconductor film.

16. The method of claim 13 wherein reducing the debris field includes using a gas flow directed towards the front surface of the film to flush out and carry away debris.

17. The method of claim 13 wherein reducing the debris field includes applying a vacuum or low pressure in a vacuum chamber containing the semiconductor film laminated to the flexible substrate.

18. The method of claim 13 wherein reducing the debris field includes using a narrow spot diameter from a specified laser so as to reduce a width of the kerf.

19. The method of claim 13 wherein reducing the debris field includes ionizing the metal with the laser beam and electrically drawing metal ions away from the kerf.

20. The method of claim 13 wherein reducing the debris field includes using a gaseous environment with a lower molecular weight than nitrogen.

Assignments (11)