Multilayered photodiode and method of manufacturing the same
View Patent ↗In a multilayered photodiode and a method of manufacturing the same, the multilayered photodiode comprises: a transparent substrate; a gate insulating film formed on the transparent substrate; a first metal layer formed on the gate insulating film; a semiconductor layer formed on the first metal layer so as to be in contact with the first metal layer; and a second metal layer formed on the semiconductor layer so as to be in contact with the semiconductor layer. The photodiode is vertically multilayered, and has a metal-insulator-metal (MIM) structure in which a P-N region is replaced by a metal, and in which a light-receiving region does not block incident light.
1. A multilayered photodiode, comprising:
a transparent substrate; and
an MIM photodiode formed on the transparent substrate;
the MIM photodiode including a first metal layer, a semiconductor layer formed on the first metal layer and in contact with the first metal layer, and a second metal layer formed on the semiconductor layer and in contact with the semiconductor layer.
2. The photodiode of claim 1 , further comprising a gate insulating film formed on the transparent substrate and a buffer layer disposed between the transparent substrate and the gate insulating film.
3. The photodiode of claim 1 , a plurality of interlayer insulating films being formed between the first metal layer and the second metal layer.
4. The photodiode of claim 1 , further comprising a first electrode electrically connected to the first metal layer.
5. The photodiode of claim 4 , the first electrode being made of a transparent conductive material.
6. The photodiode of claim 5 , the transparent conductive material comprising at least one of indium tin oxide, indium zinc oxide, carbon nanotubes, a conductive polymer, and nanowires.
7. The photodiode of claim 4 , further comprising a second electrode electrically connected to the second metal layer.
8. The photodiode of claim 7 , the second electrode being made of a transparent conductive material.
9. The photodiode of claim 8 , the transparent conductive material comprising at least one of indium tin oxide, indium zinc oxide, carbon nanotubes, a conductive polymer, and nanowires.
10. The photodiode of claim 1 , the first metal layer containing at least one of aluminum, neodymium, chrome, and molybdenum.
11. The photodiode of claim 1 , the second metal layer containing at least one of molybdenum, chrome, tungsten, aluminum-neodymium, titanium, molybdenum tungsten, and aluminum.
12. The photodiode of claim 1 , the semiconductor layer being made of a material containing one of polycrystalline silicon and amorphous silicon.
13. A multilayered photodiode, comprising:
a transparent substrate;
a gate insulating film formed on the transparent substrate;
a first metal layer formed on the gate insulating film and having an open light-receiving portion for allowing light to pass therethrough;
a semiconductor layer formed on the first metal layer and in contact with the first metal layer; and
a second metal layer formed on the semiconductor layer and in contact with the semiconductor layer.
14. The photodiode of claim 13 , the light-receiving portion being rectangular.
15. The photodiode of claim 13 , the light-receiving portion of the first metal layer being formed in a plurality of portions.
16. The photodiode of claim 15 , the portions of the light-receiving portion having a same shape.
17. The photodiode of claim 15 , the portions of the light-receiving portion being arranged at regular intervals.
18. The photodiode of claim 13 , the first metal layer being shaped as a single band and being disposed in a zigzag pattern on a top surface of the gate insulating film.
19. A method of manufacturing a multilayered photodiode, the method comprising the steps of:
forming a gate insulating film on a transparent substrate;
forming a first metal layer on the gate insulating film;
forming a semiconductor layer on the first metal layer and in contact with the first metal layer; and
forming a second metal layer on the semiconductor layer and in contact with the semiconductor layer.
20. The method of claim 19 , further comprising the step of forming a buffer layer between the transparent substrate and the gate insulating film.
21. The method of claim 19 , further comprising the step of forming a plurality of interlayer insulating films between the first metal layer and the second metal layer.
22. The method of claim 19 , further comprising the step of forming a first electrode electrically connected to the first metal layer.
23. The method of claim 22 , further comprising the step of forming a second electrode electrically connected to the second metal layer.
24. The method of claim 23 , the first and second electrodes being made of a transparent conductive material.
25. The method of claim 24 , the transparent conductive material comprising at least one of indium tin oxide, indium zinc oxide, carbon nanotubes, a conductive polymer, and nanowires.
26. The method of claim 22 , the first electrode being made of a transparent conductive material.
27. The method of claim 26 , the transparent conductive material comprising at least one of indium tin oxide, indium zinc oxide, carbon nanotubes, a conductive polymer, and nanowires.
28. The method of claim 19 , the first metal layer containing at least one of aluminum, neodymium, chrome, and molybdenum.
29. The method of claim 19 , the second metal layer containing at least one of molybdenum, chrome, tungsten, aluminum-neodymium, titanium, molybdenum tungsten, and aluminum.
30. The method of claim 19 , the semiconductor layer being made of one of polycrystalline silicon and amorphous silicon.
31. A method of manufacturing a multilayered photodiode, the method comprising the steps of:
forming a gate insulating film on a transparent substrate;
providing a first metal layer, which has an open light-receiving portion for allowing light to pass therethrough, on the gate insulating film;
forming a semiconductor layer on the first metal layer and in contact with the first metal layer; and
forming a second metal layer on the semiconductor layer and in contact with the semiconductor layer.
32. The method of claim 31 , the light-receiving portion being rectangular.
33. The method of claim 31 , the light-receiving portion of the first metal layer being formed in a plurality of portions.
34. The method of claim 33 , the portions of the light-receiving portion having a same shape.
35. The method of claim 33 , the portions of the light-receiving portion being arranged at regular intervals.
36. The method of claim 31 , the first metal layer being shaped as a single band and being disposed in a zigzag pattern on a top surface of the gate insulating film.