Light emitting device, light emitting device package and image display device including the same

1. A light emitting device comprising:

a light emitting structure comprising a first conductivity type semiconductor layer, an active layer and a second conductivity type semiconductor layer;

a first electrode disposed on the first conductivity type semiconductor layer;

an ohmic layer disposed on a predetermined area of the second conductivity type semiconductor layer;

a silicide layer disposed on the ohmic layer, and in contact with the second conductivity type semiconductor layer; and

a conductive supporting substrate disposed on the silicide layer.

2. The light emitting device of claim 1 , wherein the ohmic layer is disposed to expose the second conductivity type semiconductor layer partially and the silicide layer covers the ohmic layer, with contacting at least one area of the second conductivity type semiconductor layer directly.

3. The light emitting device of claim 1 , wherein the silicide layer is composed of a plurality of layers.

4. The light emitting device of claim 1 , wherein the silicide layer is comprising of Si and at least one of Ni, Pt, Ti, W, Cu, V, Fe or Mo.

5. The light emitting device of claim 1 , wherein the silicide layer contacts at least one area of the second conductivity type semiconductor layer directly, corresponding to the first electrode.

6. The light emitting device of claim 1 , wherein the ohmic layer is patterned to expose the second conductivity type semiconductor layer partially.

7. The light emitting device of claim 1 , further comprising:

a reflection layer disposed between the ohmic layer and the silicide layer and in contact with the second conductivity type semiconductor.

8. The light emitting device of claim 7 , further comprising:

a current blocking layer disposed between the second conductivity type semiconductor layer and the ohmic layer.

9. The light emitting device of claim 8 , wherein the silicide layer contacts at least one area of the ohmic layer directly, corresponding to the first electrode.

10. The light emitting device of claim 1 , further comprising:

an adhesive layer arranged between the silicide layer and the conductive supporting substrate.

11. The light emitting device of claim 1 , wherein a passivation layer is formed on a side surface of the light emitting structure and at least one area of the siliside layer.

12. The light emitting device of claim 1 , wherein a roughness is formed on a surface of the first conductivity type semiconductor layer.

13. A light emitting device package comprising:

a package body in which a cavity is formed;

first and second electrode layers disposed on the package body that are electrically separated from each other; and

a light emitting device disposed on the cavity that is electrically connected with the first and second electrode layers,

wherein the light emitting device comprises a light emitting structure comprising a first conductivity type semiconductor layer, an active layer and a second conductivity type semiconductor layer; a first electrode disposed on the first conductivity type semiconductor layer; an ohmic layer disposed on the second conductivity type semiconductor layer; a silicide layer disposed on the ohmic layer and in contact with the second conductivity type semiconductor layer; and a conductive supporting substrate disposed on the silicide layer.

14. The light emitting device package of claim 13 , wherein the ohmic layer is disposed to expose the second conductivity type semiconductor layer partially and the silicide layer covers the ohmic layer, with contacting at least one exposed area of the second conductivity type semiconductor layer directly.

15. The light emitting device package of claim 13 , wherein the silicide layer is comprising of Si and at least one of Ni, Pt, Ti, W, Cu, V, Fe or Mo.

16. The light emitting device package of claim 13 , wherein the silicide layer contacts at least one area of the second conductivity type semiconductor layer directly, corresponding to the first electrode.

17. The light emitting device package of claim 13 , wherein further comprising:

a current blocking layer disposed between the second conductivity type semiconductor layer and the silicide layer.

18. The light emitting device package of claim 17 , wherein the silicide layer contacts at least one area of the ohmic layer directly, corresponding to the first electrode.

19. An image display device comprising:

a circuit board;

a light emitting device package disposed on the circuit board, the light emitting device package comprising a package body in which a cavity is formed; first and second electrode layers disposed on the package body, with being electrically separated from each other; and a light emitting device disposed on the cavity, with being electrically connected with the first and second electrode layers;

an optical member configured to project a light emitted from the light emitting device package; and

a panel comprising a first transparent substrate, a second transparent substrate, a plurality of liquid crystals disposed between the first and second transparent substrate and a polarizing plate disposed on each of the first and second transparent substrates,

wherein the light emitting device comprises a light emitting structure comprising a first conductivity type semiconductor layer, an active layer and a second conductivity type semiconductor layer; a first electrode disposed on the first conductivity type semiconductor layer; an ohmic layer disposed on a predetermined area of the second conductivity type semiconductor layer; a silicide layer disposed on the ohmic layer, and in contact with the second conductivity type semiconductor layer; and a conductive supporting substrate disposed on the silicide layer.

20. The image display device of claim 19 , wherein the ohmic layer is disposed to expose the second conductivity type semiconductor layer partially and the silicide layer covers the ohmic layer, with contacting at least one exposed area of the second conductivity type semiconductor layer directly.