Semiconductor device and method of manufacturing the semiconductor device
View Patent ↗To realize forming a trench MOSFET in which a depth of a P-body is changed on the same surface as a CMOS by employing steps with good controllability and without greatly increasing the number of manufacturing steps, provided is a trench MOSFET including an extended body region ( 10 ), which is a part of a P-body region ( 4 ) and is provided in a vicinity of a deep trench ( 5 ) with a distance, the extended body region ( 10 ) being diffused deeper than the P-body region ( 4 ).
1. A semiconductor device, comprising:
a semiconductor substrate of a first conductivity type;
a buried layer of a second conductivity type on the semiconductor substrate;
an epitaxial layer of the second conductivity type on the buried layer and having a shallow trench region in a surface thereof;
a first diffusion layer region of the first conductivity type in the epitaxial layer of the second conductivity type;
a deep trench region extending from the first diffusion layer region in the epitaxial layer;
a gate insulating film on an inner wall of the deep trench region;
a gate electrode comprising polysilicon in the deep trench region and in contact with the gate insulating film;
a source region of the second conductivity type in a surface of the first diffusion layer region; and
a heavily doped diffusion layer of the first conductivity type in the surface of the first diffusion layer region,
wherein the first diffusion layer region is shaped so as to include a second diffusion layer region at a bottom portion thereof and at a position spaced away from the deep trench region, the second diffusion layer region extending in the epitaxial layer below the shallow trench region, and
wherein the buried layer comprises a heavily doped drain, the epitaxial layer comprises a lightly doped drain, the first diffusion layer region comprise a body region, and the heavily doped diffusion layer comprises a body contact region.
2. A semiconductor device according to claim 1 , wherein the second diffusion layer region resides below the body contact region.