Solid state imaging device
View Patent ↗A solid-state imaging device includes photoelectric conversion units, vertical transfer units including vertical transfer electrodes, a horizontal transfer unit, a distribution transfer unit including distribution transfer electrodes, and first light-shield layers and second light-shield layers provided on the vertical transfer units and the distribution transfer unit. The first light-shield layers and the second light-shield layers are conductive. The first light-shield layers are provided in a layer different from a layer in which the second light-shield layers are provided. At least one of the first light-shield layers serves as an interconnect electrically connected to the vertical transfer electrodes included in the same row, and at least one of the first light-shield layers on the distribution transfer unit serves as an interconnect electrically connected the distribution transfer electrodes. The first light-shield layers are disposed so as not to overlap with the horizontal transfer unit.
1. A solid-state imaging device comprising:
a plurality of photoelectric conversion units arranged in a matrix on a semiconductor substrate and each configured to convert an incident light into a signal charge;
a plurality of vertical transfer units provided in each row of said photoelectric conversion units and each configured to transfer the signal charge read out from said photoelectric conversion unit in a vertical direction;
a horizontal transfer unit configured to transfer the signal charge in a horizontal direction;
a distribution transfer unit configured to selectively transfer the signal charge from said plurality of vertical transfer units to said horizontal transfer unit; and
a plurality of first light-shield layers and second light-shield layers provided on said plurality of vertical transfer units and said distribution transfer unit and configured to block a light incident on said plurality of vertical transfer units;
wherein said plurality of vertical transfer units each includes a plurality of vertical transfer electrodes, and is configured to transfer the signal charge in a vertical direction in accordance with a vertical transfer pulse applied to each of the plurality of vertical transfer electrodes;
said distribution transfer unit includes
a plurality of distribution transfer electrodes each corresponding to each of said vertical transfer units, and is configured to selectively transfer the signal charge in accordance with a distribution transfer pulse applied to each of the plurality of distribution transfer electrodes;
said plurality of first light-shield layers and said second light-shield layers are conductive;
said plurality of first light-shield layers is provided in a layer different from a layer in which said second light-shield layers are provided;
at least one of said plurality of first light-shield layers serves as an interconnect electrically connected to the plurality of vertical transfer electrodes included in the same row;
at least one of said plurality of first light-shield layers on said distribution transfer unit serves as an interconnect electrically connected the plurality of distribution transfer electrodes; and
said plurality of first light-shield layers is disposed so as not to overlap with said horizontal transfer unit.
2. The solid-state imaging device according to claim 1 ,
wherein said second light-shield layer includes a plurality of sub light-shield layers;
at least one of the plurality of sub light-shield layers on said distribution transfer unit serves as an interconnect electrically connected to at least another one of the plurality of distribution transfer electrodes; and
the plurality of sub light-shield layers is disposed so as not to overlap with said horizontal transfer unit.
3. The solid-state imaging device according to claim 2 ,
wherein at least one of the plurality of sub light-shield layers on said vertical transfer unit serves as an interconnect electrically connected to the plurality of vertical transfer electrodes included in the same row.
4. The solid-state imaging device according to claim 1 ,
wherein the plurality of vertical transfer electrodes and the plurality of distribution transfer electrodes are electrically connected to said plurality of first light-shield layers.
5. The solid-state imaging device according to claim 1 ,
wherein said plurality of first light-shield layers is provided in a layer closer to the semiconductor substrate than is the second light-shield layer.
6. The solid-state imaging device according to claim 1 ,
wherein each of the plurality of distribution transfer electrodes has a longer electrode length in a vertical direction than each of the plurality of vertical transfer electrodes.
7. The solid-state imaging device according to claim 1 ,
wherein the plurality of distribution transfer electrodes is configured in a single layer structure; and
the plurality of distribution transfer electrodes has a longer electrode length in a horizontal direction than each of the plurality of vertical transfer electrodes.
8. The solid-state imaging device according to claim 1 , further comprising
an anti-reflection layer provided over said plurality of photoelectric conversion units and over a region between adjacent ones of the plurality of distribution transfer electrodes.