Method of making a mask, method of patterning by using this mask and method of manufacturing a micro-device

1. A method of making a mask for patterning a thin film, comprising:

a step of forming an inorganic material, which is resolvable into alkali solution, on a substrate;

a step of forming the inorganic material in a predetermined pattern; and

a step of narrowing the inorganic material with the alkali solution to form the mask, wherein

the step of forming the inorganic material in the predetermined pattern includes:

forming an etching stopper layer having a tolerance to etching on the inorganic material;

forming a photoresist in a predetermined pattern on the etching stopper layer by a photolithography method;

removing a portion of the etching stopper layer that is not covered by the photoresist to form the etching stopper layer in a predetermined pattern; and

removing a portion of the inorganic material by etching, the portion not being covered by the etching stopper layer in the predetermined pattern.

2. The method of making the mask according to claim 1 , wherein

in the step of forming the inorganic material in the predetermined pattern, the inorganic material is formed in the predetermined pattern by a photolithography method.

3. The method of making the mask according to claim 1 , wherein

the portion of the inorganic material that is not covered by the etching stopper layer in the predetermined pattern is removed by reactive ion etching.

4. The method of making the mask according to claim 3 , wherein

the etching stopper layer is formed of a material having a tolerance to the active ion etching.

5. The method of making the mask according to claim 1 , wherein

the etching stopper layer is formed of Ni and/or NiFe.

6. The method of making the mask according to claim 1 , wherein

after removing the portion of the inorganic material by etching, the portion not being covered by the etching stopper layer in the predetermined pattern, the etching stopper layer is removed before narrowing the inorganic material with the alkali solution.

7. A method of patterning a thin film, comprising:

a step of making a mask having an inorganic material, which is resolvable into alkali solution, by the method of making the mask according to claim 1 on a substrate on which a first thin film is formed; and

a step of removing a portion of the first thin film that is not covered by the mask and of patterning the first thin film.

8. A method of manufacturing a micro device, comprising:

a step of patterning a thin film using the method according to claim 7 .

9. A method of manufacturing a thin film magnetic head, comprising the method of patterning the thin film according to claim 7 , wherein,

the first thin film is a lamination film of which electrical resistance changes according to an external magnetic field.

10. A method of making a mask for patterning a thin film, comprising:

a step of forming an inorganic material, which is resolvable into alkali solution, on a substrate;

a step of forming the inorganic material in a predetermined pattern; and

a step of narrowing the inorganic material with the alkali solution to form the mask, wherein

the inorganic material is formed of an inorganic oxide selected from Al 2 O 3 , ZnO, SnO, SnO 2 , PbO, PbO 2 , Pb 3 O 4 , MgO, Nb 2 O 5 , Ta 2 O 5 , TiO 2 , and WO 3 , or a combination of two or more of these.

11. A method of patterning a thin film, comprising:

a step of making a mask having an inorganic material, which is resolvable into alkali solution, by the method of making the mask according to claim 10 on a substrate on which a first thin film is formed; and

a step of removing a portion of the first thin film that is not covered by the mask and of patterning the first thin film.

12. A method of manufacturing a micro device, comprising:

a step of patterning a thin film using the method according to claim 11 .

13. A method of manufacturing a thin film magnetic head, comprising the method of patterning the thin film according to claim 11 , wherein,

the first thin film is a lamination film of which electrical resistance changes according to an external magnetic field.

14. A method of making a mask for patterning a thin film, comprising:

a step of forming an inorganic material, which is resolvable into alkali solution, on a substrate;

a step of forming the inorganic material in a predetermined pattern; and

a step of narrowing the inorganic material with the alkali solution to form the mask, wherein

in the step of forming the inorganic material, which is resolvable into the alkali solution, on the substrate, a first inorganic material of which an etching rate to the alkali solution is relatively fast, and a second inorganic material of which an etching rate to the alkali solution is relatively slow are formed in this order.

15. The method of making the mask according to claim 14 , wherein

the first inorganic material is formed by a low temperature atomic layer vapor deposition method, and the second inorganic material is formed by a high temperature atomic layer vapor deposition method.

16. A method of patterning a thin film, comprising:

a step of making a mask having an inorganic material, which is resolvable into alkali solution, by the method of making the mask according to claim 14 on a substrate on which a first thin film is formed; and

a step of removing a portion of the first thin film that is not covered by the mask and of patterning the first thin film.

17. A method of manufacturing a micro device, comprising:

a step of patterning a thin film using the method according to claim 16 .

18. A method of manufacturing a thin film magnetic head, comprising the method of patterning the thin film according to claim 16 , wherein,

the first thin film is a lamination film of which electrical resistance changes according to an external magnetic field.

19. A method of patterning a thin film, comprising:

a step of forming an inorganic material, which is resolvable into alkali solution, on a substrate on which a first thin film is formed;

a step of forming the inorganic material in a predetermined pattern;

a step of narrowing the inorganic material with the alkali solution to form a mask,

a step of removing a portion of the first thin film that is not covered by the mask and of patterning the first thin film; and

a step of forming a second thin film on a portion of the substrate where the first thin film is removed and on the mask after the step of patterning the first thin film.

20. The method of patterning the thin film according to claim 19 , wherein

after patterning the first thin film, the mask is removed by alkali solution.

21. The method of patterning the thin film according to claim 19 , further comprising:

a step of covering the second thin film formed on the substrate with a resist, after forming the second thin film, such that at least a portion of the second thin film formed on the mask is exposed;

a step of removing a portion of the second thin film that is formed on the mask and that is exposed from the resist to expose a portion of the mask;

a step of removing the mask with alkali solution to form a space between the first thin film and the resist; and

a step of removing the second thin film formed on the mask and attached to the resist as well as the resist.

22. The method of patterning the thin film according to claim 21 , wherein

the step of removing the second thin film attached to the resist includes removal of attachments attached on the mask in the step of patterning the first thin film.

23. A method of manufacturing a micro device, comprising:

a step of patterning a thin film using the method according to claim 19 .

24. A method of manufacturing a thin film magnetic head, comprising the method of patterning the thin film according to claim 19 , wherein

the first thin film is a lamination film of which electrical resistance changes according to an external magnetic field.