Photovoltaic device containing an N-type dopant source
View Patent ↗Described herein is a method of using the buffer layer of a transparent conductive substrate as a dopant source for the n-type window layer of a photovoltaic device. The dopant source of the buffer layer distributes to the window layer of the photovoltaic device during semiconductor processing. Described herein are also methods of manufacturing embodiments of the substrate structure and photovoltaic device. Disclosed embodiments also describe a photovoltaic module and a photovoltaic structure with a plurality of photovoltaic devices having an embodiment of the substrate structure.
1. A photovoltaic device comprising:
a light-penetrable support layer;
a first buffer layer containing a n-type dopant, wherein the first buffer layer comprises at least one of tin oxide, zinc tin oxide, or cadmium zinc oxide;
a second buffer layer containing the n-type dopant over the first buffer layer;
a third buffer layer containing the n-type dopant over the second buffer layer;
at least one transparent conductive oxide layer between the support layer and the first buffer layer;
a continuous semiconductor window layer containing the n-type dopant over the third buffer layer, wherein the dopant concentration in the semiconductor window layer is higher than the dopant concentration in the first buffer layer; and
a semiconductor absorber layer over the semiconductor window layer.
2. The device of claim 1 , wherein the first buffer layer has a thickness from about 100 Å to about 1000 Å.
3. The device of claim 2 , wherein the concentration of the dopant in the first buffer layer is less than about 1×10 18 atoms/cm 3 .
4. The device of claim 1 , wherein the dopant is selected from a group III element of the periodic table.
5. The device of claim 1 , wherein the n-type dopant in the first buffer layer diffuses into the semiconductor window layer during at least one of semiconductor processing and subsequent thermal processing.
6. A photovoltaic device comprising:
a light-penetrable support layer;
a first buffer layer containing a n-type dopant;
a second buffer layer over the first buffer layer;
a third buffer layer over the second buffer layer;
at least one transparent conductive oxide layer between the support layer and the first buffer layer;
a semiconductor window layer over the second buffer layer;
wherein the semiconductor window layer contains a portion of the dopant that diffused from the first buffer layer through the second buffer layer and third buffer layer,
wherein the second buffer layer and the third buffer layer contain a portion of the dopant that diffused from the first buffer layer; and
wherein the dopant concentration in the semiconductor window layer is higher than the dopant concentration in the first buffer layer; and
a semiconductor absorber layer over the semiconductor window layer.
7. The device of claim 6 , wherein each of the first and second buffer layers have a thickness from about 100 Å to about 1000 Å.
8. The device of claim 7 , wherein the concentration of the dopant in the first buffer layer is less than about 1×10 18 atoms/cm 3 .
9. The device of claim 6 , wherein the second buffer layer contains a different amount of the n-type dopant than the first buffer layer.
10. The device of claim 6 , wherein the dopant is selected from a group III element of the periodic table.
11. The device of claim 6 , wherein each of the first and second buffer layers comprise at least one of tin oxide, zinc tin oxide or cadmium zinc oxide.
12. The device of claim 6 , wherein the n-type dopant in the first buffer layer diffuses through the second buffer layer into the semiconductor window layer during at least one of semiconductor processing and subsequent thermal processing.