Atomic layer deposition encapsulation for acoustic wave devices
View Patent ↗Acoustic wave devices and methods of coating a protective film of alumina (Al 2 O 3 ) on the acoustic wave devices are disclosed herein. The protective film is applied through an atomic layer deposition (ALD) process. The ALD process can deposit very thin layers of alumina on the surface of the acoustic wave devices in a precisely controlled manner. Thus, the uniform film does not significantly distort the operation of the acoustic wave device.
1. A method of coating a surface of an acoustic wave device, comprising:
exposing the acoustic wave device to a first precursor, the first precursor comprising a trimethyaluminum gas that reacts with the surface of the acoustic wave device to form a first monolayer of methyaluminoxane over the surface of the acoustic wave device; and
exposing the first monolayer to a second precursor that reacts with the methyaluminoxane of the first monolayer so that the first monolayer comprises alumina.
2. The method of claim 1 wherein the second precursor comprises water vapor.
3. The method of claim 1 , further comprising after exposing the acoustic wave device to the first precursor but before exposing the first monolayer to the second precursor, cleaning the surface of the first monolayer.
4. The method of claim 3 , further comprising after exposing the first monolayer to the second precursor, again cleaning the surface of the first monolayer.
5. The method of claim 1 wherein, after exposing the first monolayer to the second precursor, the first monolayer has a surface that is hydroxylated.
6. The method of claim 5 , further comprising:
exposing the first monolayer to the first precursor, which reacts with the surface of the first monolayer to form a second monolayer comprising methyaluminoxane over the first monolayer; and
exposing the second monolayer to the second precursor, which reacts with the methyaluminoxane of the second monolayer so that the second monolayer comprises alumina and has a surface that is hydroxylated.
7. The method of claim 6 , further comprising:
cleaning the surface of the first monolayer after exposing the acoustic wave device to the first precursor but before exposing the first monolayer to the second precursor; and
again, cleaning the surface of the first monolayer after exposing the first monolayer to the second precursor but before exposing the first monolayer to the first precursor.
8. The method of claim 7 , further comprising cleaning the surface of the second monolayer after exposing the first monolayer to the first precursor but before exposing the second monolayer to the second precursor.
9. The method of claim 1 , further comprising hydroxilating the surface of the acoustic wave device prior to exposing the acoustic wave device to the first precursor.
10. The method of claim 1 wherein the acoustic wave device comprises a piezoelectric substrate and a transducer formed in the piezoelectric substrate wherein the surface of the acoustic wave device comprises a surface of the piezoelectric substrate and a surface of the transducer.
11. The method of claim 10 wherein the transducer of the acoustic wave device comprises aluminum.
12. The method of claim 1 , further comprising heating the surface of the acoustic wave device.
13. The method of claim 1 wherein after exposing the first monolayer to the second precursor, the first monolayer is less than 0.1 Angstroms in thickness.