IP Library Granted Patent US 8,758,912
Granted Patent B2
US 8,758,912 · App. 13/234,399 · Granted Jun 24, 2014

Interlayers for magnetic recording media

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Quick Facts
Patent No.
US 8,758,912
App. No.
13/234,399
Granted
Jun 24, 2014
Kind
B2
Abstract

Embodiments of the present invention include a recording medium comprising: a hard magnetic recording layer and an interlayer disposed under the hard magnetic recording layer, wherein the interlayer comprises an upper layer of Ru-based alloy and a lower layer of RuCo or ReCo alloy. Generally for embodiments of the present invention, the lower layer of RuCo or ReCo alloy is formed over a seed layer using a low-pressure sputter process, and the upper layer of Ru-based alloy is formed over the lower layer using a high-pressure sputter process.

Claims (29)

1. A recording medium comprising:

a hard magnetic recording layer;

an upper layer of an interlayer disposed under the hard magnetic recording layer, the upper layer comprising a Ru-based alloy; and

a lower layer of the interlayer disposed under the upper layer, the lower layer comprising a ReCo alloy;

wherein the lower layer of the interlayer comprises Re 100-X —Co X , where X is between 20 and 60.

2. The recording medium of claim 1 , further comprising an orientation control layer disposed under the lower layer of the interlayer.

3. The recording medium of claim 2 , wherein the orientation control layer comprises a NiW alloy, a NiWAl alloy, or a NiWAlFe alloy.

4. The recording medium of claim 2 , further comprising a seed layer disposed under the orientation control layer.

5. The recording medium of claim 1 , wherein the lower layer of the interlayer has been deposited by way of a low-pressure sputtering process.

6. The recording medium of claim 5 , wherein the lower layer of the interlayer has been deposited using Ar gas at a sputter pressure of approximately 1 to 20 mTorr.

7. The recording medium of claim 1 , wherein the upper layer of the interlayer has been deposited by way of a high-pressure sputtering process.

8. The recording medium of claim 7 , wherein the upper layer of the interlayer has been deposited using Ar gas at a sputter pressure of approximately 40 to 100 mTorr.

9. The recording medium of claim 1 , wherein the recording medium is included in a recording device comprising a housing containing a recording head and the recording medium, the recording head for reading magnetic signals from, and writing magnetic signals to, the recording medium.

10. A method of manufacturing a recording medium, comprising:

forming a first layer of an interlayer, the first layer comprising a ReCo alloy;

forming a second layer of the interlayer over the first layer, the second layer comprising a Ru-based alloy; and

forming a hard magnetic recording layer over the interlayer;

wherein the first layer of the interlayer comprises Re 100-X —Co X , where X is between 20 and 60.

11. The method of claim 10 , further comprising forming an orientation control layer before forming the first layer of the interlayer over the orientation control layer.

12. The method of claim 11 , wherein the orientation control layer comprises a NiW alloy, a NiWAl alloy, or a NiWAlFe alloy.

13. The method of claim 11 , further comprising forming a seed layer before forming the orientation control layer over the seed layer.

14. The method of claim 10 , wherein forming the first layer of an interlayer comprises depositing the first layer using a low-pressure sputtering process.

15. The method of claim 14 , wherein using the low-pressure sputtering process comprises using Ar gas at a sputter pressure of approximately 1 to 20 mTorr.

16. A method of manufacturing a recording medium, comprising:

forming a first layer of an interlayer, the first layer comprising a ReCo alloy;

forming a second layer of the interlayer over the first layer, the second layer comprising a Ru-based alloy; and

forming a hard magnetic recording layer over the interlayer,

wherein forming the second layer of the interlayer comprises depositing the second layer over the first layer of the interlayer using a high-pressure sputtering process,

wherein using the high-pressure sputtering process comprises using Ar gas at a sputter pressure of approximately 40 to 100 mTorr.

Assignments (10)
PATENT COLLATERAL AGREEMENT - A&R LOAN AGREEMENT Recorded Aug 21, 2023
From: WESTERN DIGITAL TECHNOLOGIES, INC.
To: JPMORGAN CHASE BANK, N.A.
Reel/Frame 064715/0001 →
PATENT COLLATERAL AGREEMENT - DDTL LOAN AGREEMENT Recorded Aug 21, 2023
From: WESTERN DIGITAL TECHNOLOGIES, INC.
To: JPMORGAN CHASE BANK, N.A.
Reel/Frame 067045/0156 →
RELEASE OF SECURITY INTEREST AT REEL 038710 FRAME 0383 Recorded Feb 8, 2022
From: JPMORGAN CHASE BANK, N.A.
To: WD MEDIA, LLC; WESTERN DIGITAL TECHNOLOGIES, INC.
Reel/Frame 058965/0410 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded May 3, 2019
From: WD MEDIA, LLC
To: WESTERN DIGITAL TECHNOLOGIES, INC.
Reel/Frame 049084/0826 →
CHANGE OF NAME Recorded Sep 19, 2018
From: WD MEDIA, INC
To: WD MEDIA, LLC
Reel/Frame 047112/0758 →
RELEASE OF SECURITY INTEREST Recorded Mar 5, 2018
From: U.S. BANK NATIONAL ASSOCIATION, AS COLLATERAL AGENT
To: WD MEDIA, LLC
Reel/Frame 045501/0672 →
SECURITY AGREEMENT Recorded May 16, 2016
From: WD MEDIA, LLC
To: JPMORGAN CHASE BANK, N.A., AS COLLATERAL AGENT
Reel/Frame 038710/0383 →
SECURITY AGREEMENT Recorded May 16, 2016
From: WD MEDIA, LLC
To: JPMORGAN CHASE BANK, N.A., AS COLLATERAL AGENT
Reel/Frame 038709/0879 →
SECURITY AGREEMENT Recorded May 16, 2016
From: WD MEDIA, LLC
To: U.S. BANK NATIONAL ASSOCIATION, AS COLLATERAL AGENT
Reel/Frame 038709/0931 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Sep 16, 2011
From: SRINIVASAN, KUMAR; ACHARYA, B. RAMAMURTHY
To: WD MEDIA, INC.
Reel/Frame 026922/0865 →