GRAPHENE QUANTUM DOT LIGHT EMITTING DEVICE AND METHOD OF MANUFACTURING THE SAME
A graphene quantum dot light emitting device includes: a first graphene; a graphene quantum dot layer disposed on the first graphene and including a plurality of graphene quantum dots; and a second graphene disposed on the graphene quantum dot layer. A method of manufacturing a graphene quantum dot light emitting device includes: forming a first graphene doped with a first dopant; forming a graphene quantum dot layer including a plurality of graphene quantum dots on the first graphene; and forming a second graphene doped with a second dopant on the graphene quantum dot layer.
1 . A graphene quantum dot light emitting device comprising:
a first graphene;
a graphene quantum dot layer disposed on the first graphene and comprising a plurality of graphene quantum dots; and
a second graphene disposed on the graphene quantum dot layer.
2 . The graphene quantum dot light emitting device of claim 1 , wherein the first graphene is an n-type graphene, and the second graphene is a p-type graphene.
3 . The graphene quantum dot light emitting device of claim 2 , further comprising an electron transport layer (ETL) disposed between the n-type graphene and the graphene quantum dot layer.
4 . The graphene quantum dot light emitting device of claim 3 , wherein the ETL comprises TPBi(1,3,5-tris(N-phenylbenzimidazol-2,yl)benzene), PBD(2-(4-Biphenylyl)-5-(4-tert-butylphenyl)-1,3,4-oxadiazole), BCP(2,9-Dimethyl-4,7-diphenyl-1,10-phenanhro-line), BAlq(Bis-(2-methyl-8-quinolinolate)-4-(phenylphenolato)aluminium), or OXD7(1,3-bis(N,N-t-butyl-phenyl)-1,3,4-oxadiazole).
5 . The graphene quantum dot light emitting device of claim 2 , further comprising a hole transport layer (HTL) between the graphene quantum dot layer and the p-type graphene.
6 . The graphene quantum dot light emitting device of claim 5 , wherein the HTL comprises poly-TPD(N,N′-bis(3-methylphenyl)-N,N′-bis(phenyl)-benzidine), PEDOT(poly(3,4-ethylenedioxythiophene)), PSS(poly(styrenesulfonate)), PPV(poly(p-phenylene vinylene)), PVK(poly(N-vinylcarbazole)), TFB(poly[(9,9-dioctylfluorenyl-2,7-diyl)-co-(4,4′(N-(4-sec-butylphenyl)))diphenylamine]), PFB, TBADN(3-Tert-butyl-9,10-di(naphth-2-yl)anthracene), NPB(N,N′-bis(1-naphtalenyl)-N-N′-bis(phenyl-benzidine)), Spiro-NPB(N,N′-di(naphthalen-1-yl)-N,N′-diphenyl-spiro), DMFL-NPB(N,N′-di(naphthalene-1-yl)-N,N′-diphenyl-9,9′-dimethyl-fluorene), DPFL-NPB(N,N′-di(naphthalen-1-yl)-N,N′-diphenyl-9,9′-diphenyl-fluorene), or mHOST5(2,7-Di(N,N′-carbarzolyl)-9,9-bis[4-(2-ethylhexyloxy)-phenyl]fluorine).
7 . The graphene quantum dot light emitting device of claim 1 , wherein the graphene quantum dot layer further comprises an organic solvent.
8 . The graphene quantum dot light emitting device of claim 1 , wherein the plurality of graphene quantum dots have a size of about 1 nm to about 30 nm.
9 . The graphene quantum dot light emitting device of claim 2 , wherein the n-type graphene is doped with one of selected from nitrogen (N), fluorine (F), and manganese (Mn).
10 . The graphene quantum dot light emitting device of claim 2 , wherein the p-type graphene is doped with one of selected from oxygen (O), gold (Au), and bismuth (Bi).
11 . The graphene quantum dot light emitting device of claim 1 , further comprising a first contact pad that is disposed on the first graphene to be separated from the graphene quantum dot layer and the second graphene, or on a lower surface of the first graphene.
12 . The graphene quantum dot light emitting device of claim 1 , further comprising a second contact pad disposed on the second graphene.
13 . A method of manufacturing a graphene quantum dot light emitting device, the method comprising:
forming a first graphene doped with a first dopant;
forming a graphene quantum dot layer comprising a plurality of graphene quantum dots on the first graphene; and
forming a second graphene doped with a second dopant on the graphene quantum dot layer.
14 . The method of claim 13 , wherein the first dopant is an n-type dopant, and the second dopant is a p-type dopant.
15 . The method of claim 14 , wherein the n-type dopant is one of selected from nitrogen (N), fluorine (F), and manganese (Mn).
16 . The method of claim 14 , wherein the p-type dopant is one of selected from oxygen (O), gold (Au), and bismuth (Bi).
17 . The method of claim 14 , further comprising forming an electron transport layer (ETL) between the first graphene and the graphene quantum dot layer.
18 . The method of claim 17 , wherein the ETL comprises TPBi(1,3,5-tris(N-phenylbenzimidazol-2,yl)benzene), PBD(2-(4-Biphenylyl)-5-(4-tert-butylphenyl)-1,3,4-oxadiazole), BCP(2,9-Dimethyl-4,7-diphenyl-1,10-phenanhro-line), BAlq(Bis-(2-methyl-8-quinolnolate)-4-(phenylphenolato)aluminium), or OXD7(1,3-bis(N,N-t-butyl-phenyl)-1,3,4-oxadiazole).
19 . The method of claim 14 , further comprising forming a hole transport layer (HTL) between the graphene quantum dot layer and the second graphene.
20 . The method of claim 19 , wherein the HTL comprises poly-TPD(N,N′-bis(3-methylphenyl)-N,N′-bis(phenyl)-benzidine), PEDOT(poly(3,4-ethylenedioxythiophene)), PSS(poly(styrenesulfonate)), PPV(poly(p-phenylene vinylene)), PVK(poly(N-vinylcarbazole)), TFB(poly[(9,9-dioctylfluorenyl-2,7-diyl)-co-( 4 , 4 ′(N-(4-sec-butylphenyl)))diphenylamine]), PFB, TBADN(3-Tert-butyl-9,10-di(naphth-2-yl)anthracene), NPB(N,N′-bis(1-naphtalenyl)-N-N′-bis(phenyl-benzidine)), Spiro-NPB (N,N′-di(naphthalen-1-yl)-N,N′-diphenyl-spiro), DMFL-NPB(N,N′-di(naphthalene-1-yl)-N,N′-diphenyl-9,9′-dimethyl-fluorene), DPFL-NPB(N,N′-di(naphthalen-1-yl)-N,N′-diphenyl-9,9′-diphenyl-fluorene), or mHOST5(2,7-Di(N,N′-carbarzolyl)- 9 , 9 -bis[ 4 -(2-ethylhexyloxy)-phenyl]fluorine).
21 . The method of claim 13 , wherein the plurality of graphene quantum dots are formed by applying ultrasonic waves to a solution including graphite, and breaking the graphite.
22 . The method of claim 13 , wherein the plurality of graphene quantum dots are formed by heating graphite oxide to reduce a part of the graphite oxide, and cutting the reduced part of the graphite oxide.
23 . The method of claim 13 , wherein the graphene quantum dot layer is formed by spin coating the plurality of graphene quantum dots on the first graphene.