METHOD OF MANUFACTURING PIEZOELECTRIC VIBRATING PIECE, WAFER, PIEZOELECTRIC VIBRATOR, OSCILLATOR, ELECTRONIC APPARATUS, AND RADIO-CONTROLLED TIMEPIECE
Disclosed is a method of manufacturing a piezoelectric vibrating piece. In a resist pattern forming step, a mask member is arranged in a wafer S while a mask-side mark formed in a mask member prepared for one electrode film is aligned with wafer-side marks S 3 and S 4 corresponding to the mask member. The mask-side mark has exposure openings which pass through the mask member, and the shape of each of the exposure openings in plan view differs between a plurality of mask members. A plurality of wafer-side marks S 3 and S 4 respectively have concave portions S 5 and S 6 , and the shape of each of the concave portions S 5 and S 6 differs between a plurality of wafer-side marks S 3 and S 4 such that the wafer-side marks S 3 and S 4 have the same shape as the exposure openings in the corresponding mask member in plan view. In the resist pattern forming step, the concave portions S 5 and S 6 are exposed from the exposure openings to align the mask-side mark with the wafer-side marks S 3 and S 4.
1 . A method of producing piezoelectric vibration pieces comprising:
(a) forming in a wafer a plurality of piezoelectric pieces and wafer marks which comprise pairs of marks formed at predetermined locations in the wafer, wherein each mark has a predetermine shape which is asymmetrical in any directions, each pair presents a unique mark pattern which is asymmetrical in any directions, and the marks are identical to each other in the respective pairs but the marks in a pair are different from the marks in the other pairs;
(b) providing a plurality of masks each comprising a pair of marks identical in mark pattern to a different one of the pairs of marks formed in the wafer;
(c) forming layers of electrode films on the wafer in which the plurality of piezoelectric pieces and the wafer marks are formed;
(d) applying a resist film on the wafer on which the layers of electrode films are formed;
(e) placing one of the masks on the wafer so as to coincide a pair of marks of the one mark with a corresponding pair of marks formed in the wafer;
(f) partially removing the resist film according to a pattern of the mask;
(g) partially removing at least one layer of electrode film using a remnant of the resist film; and
(h) repeating steps (d), (e), (f) and (g) using a different mask.
2 . The method according to claim 1 , wherein the applying a resist film comprises covering the corresponding mark pair formed in the wafer.
3 . The method according to claim 1 , wherein a distance between marks is different in the respective pairs.
4 . The method according to claim 1 , wherein the marks in one pair is in a form of letter “L”.
5 . The method according to claim 1 , wherein the marks in one pair is in a form of a square with one corner being removed therefrom.
6 . The method according to claim 1 , wherein the marks of the respective pairs are formed respectively in two opposite margins of the wafer.
7 . The method according to claim 1 , wherein the mark pairs are arranged in parallel to each other in the wafer.