Semiconductor element
According to one embodiment, the semiconductor element includes a semi-insulating substrate which has a first first-conductivity-type layer. The semiconductor element includes a first semiconductor layer. The first semiconductor layer contains non-doped Al X Ga 1-X N (0≦X<1). The semiconductor element includes a second semiconductor layer. The second semiconductor layer contains non-doped or second-conductivity-type Al Y Ga 1-Y N (0<Y≦1 and X<Y)). The semiconductor element includes a first major electrode and a second major electrode. The semiconductor element includes a control electrode provided on the second semiconductor layer between the major electrodes. And the first first-conductivity-type layer is provided under the control electrode.
1. A semiconductor element, comprising:
a semi-insulating substrate;
a first first-conductivity-type layer of a first conductivity type provided selectively on a surface of the semi-insulating substrate;
a first semiconductor layer provided on the semi-insulating substrate and the first first-conductivity-type layer, the first semiconductor layer containing Al x Ga 1-x N (0≦X<1);
a second semiconductor layer provided on the first semiconductor layer, the second semiconductor layer containing Al y Ga 1-y N (0<Y≦1 and X<Y)) that is not of the first conductivity type;
a first major electrode connected to the second semiconductor layer;
a second major electrode connected to the second semiconductor layer; and
a control electrode provided on the second semiconductor layer between the first major electrode and the second major electrode,
the first first-conductivity-type layer being disposed under the control electrode such that a side edge of the first first-conductivity-type layer and a side of the control electrode that is facing the second major electrode are substantially aligned in a vertical direction.
2. The element according to claim 1 , wherein the first first-conductivity-type layer is electrically connected to the first major electrode.
3. The element according to claim 1 , further comprising:
a first insulating film provided on a first portion of a surface of the second semiconductor layer that is between the control electrode and the first major electrode and a second portion of the surface that is between the control electrode and the second major electrode; and
a first field plate electrode provided on the first insulating film, wherein
the first field plate electrode is connected to the control electrode.
4. The element according to claim 3 , further comprising:
a second insulating film covering the first field plate electrode; and
a second field plate electrode provided on the second insulating film, wherein
the second field plate electrode is connected to the first major electrode.
5. The element according to claim 1 , further comprising a gate insulating film provided between the second semiconductor layer and the control electrode.
6. The element according to claim 1 , wherein the semi-insulating substrate is made of silicon carbide.