IP Library Granted Patent US 9,206,268
Granted Patent B2
US 9,206,268 · App. 13/235,004 · Granted Dec 8, 2015

Methods and compositions for inhibiting polystyrene formation during styrene production

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Quick Facts
Patent No.
US 9,206,268
App. No.
13/235,004
Granted
Dec 8, 2015
Kind
B2
Abstract

Methods and compositions are provided for inhibiting the polymerization of a vinyl aromatic monomer, such as styrene monomer, during elevated temperature processing or distillation thereof. The compositions comprise an inhibitor combination of (A) a hydroxylamine and (B) a stable free radical plus a retarder that is either; (C) dinitrobutylphenol or (D) quinone methide. The ratio of (A) to (B) ranges from about 5% (A) to 95% (B) to about 95% (A) to about 5% (B). The compositions are added to the vinyl aromatic monomer in amounts sufficient to prevent polymerization during the distillation process. Typically the inhibitor combination is added to the vinyl aromatic monomer in an amount ranging from about 10 to 150 ppm of the monomer. Retarders are typically added in an amount ranging from 50 to 1500 ppm of the vinyl aromatic monomer.

Claims (10)

1. A vinyl aromatic monomer anti-polymerization composition comprising (A) 2-propanol 1,1′-(hydroxyimino)bis and B) a nitroxyl free radical compound.

2. The vinyl aromatic monomer anti-polymerization composition of claim 1 , wherein the ratio of (A) to (B) ranges from about 5% (A) to 95% (B) to about 95% (A) to about 5% (B).

3. The vinyl aromatic monomer anti-polymerization composition of claim 1 , wherein the nitroxyl free radical compound (B) is a member selected from the group consisting of 4-hydroxy-2,2,6,6-tetramethyl-1-piperidinyloxy, tetramethylpiperidino-N-oxyl and 1-oxyl 2,2,6,6-tetramethyl-4-piperidinol.

4. The vinyl aromatic anti-polymerization composition of claim 3 wherein said nitroxyl free radical compound (B) is 4-hydroxy-2,2,6,6-tetramethyl-1-piperidinyloxy.

5. The vinyl aromatic monomer anti-polymerization composition of claim 1 , wherein (A)+(B) collectively are added to the vinyl aromatic monomer in an amount ranging from about 10 to about 150 ppm based upon one million parts of the vinyl aromatic monomer.

6. The vinyl aromatic monomer anti-polymerization composition of claim 1 , wherein the composition is in a liquid carrier including water or a non-polar organic solvent.

7. The vinyl aromatic anti-polymerization composition of claim 1 further comprising (C) a retarder compound selected from the group consisting of i) dinitrobutylphenol and ii) a quinone methide.

8. The vinyl aromatic monomer anti-polymerization composition of claim 7 , wherein the retarder (C) is added to the vinyl aromatic monomer in an amount ranging from about 50 to about 1500 ppm based upon one million parts of the vinyl aromatic monomer.

9. The vinyl aromatic monomer anti-polymerization composition of claim 7 , wherein the retarder (C) is dinitrobutylphenol.

10. The vinyl aromatic monomer anti-polymerization composition of claim 7 , wherein the retarder is (C) quinone methide.

Assignments (2)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Nov 12, 2018
From: GENERAL ELECTRIC COMPANY
To: BL TECHNOLOGIES, INC.
Reel/Frame 047502/0065 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Nov 15, 2011
From: LINK, JOHN; HONG, MIKE
To: GENERAL ELECTRIC COMPANY
Reel/Frame 027227/0200 →