Solid electrolytic capacitor and method of manufacturing a solid electrolytic capacitor

1. A method for forming a capacitor comprising:

providing an anode with a dielectric on said anode and a conductive node in electrical contact with said anode;

forming a conductive path between said conductive node and an active cathode region wherein said active cathode region is on said dielectric;

applying voltage to said anode;

electrochemically polymerizing a monomer thereby forming an electrically conducting polymer of said monomer in said active cathode region; and

disrupting said conductive path between said conductive node and said active cathode region.

2. The method for forming a capacitor of claim 1 wherein said conductive path is a conductive bridge.

3. The method for forming a capacitor of claim 1 wherein said active cathode region is at least partially covered by a conductive seed layer.

4. The method for forming a capacitor of claim 3 wherein said conductive seed layer comprises a material selected from manganese dioxide and a conductive polymer.

5. The method for forming a capacitor of claim 3 wherein said conductive bridge comprises said conductive seed layer.

6. The method for forming a capacitor of claim 5 wherein said conductive bridge is said conductive seed layer.

7. The method for forming a capacitor of claim 1 further comprising:

forming an insulator on said dielectric.

8. The method for forming a capacitor of claim 7 wherein said conductive path extends over said insulator.

9. The method for forming a capacitor of claim 1 wherein said disrupting said conductive path comprises laser ablation.

10. The method for forming a capacitor of claim 1 wherein said conductive path comprises a material selected from manganese dioxide and conductive polymer.

11. The method for forming a capacitor of claim 1 wherein said disrupting said electrical conductivity comprises disrupting conductivity of said conductive path.

12. The method for forming a capacitor of claim 1 wherein said anode is selected from the group consisting of a valve metal and a conductive oxide of a valve metal.

13. The method for forming a capacitor of claim 12 wherein said anode is selected from the group consisting of aluminum, tantalum, niobium and NbO.

14. The method for forming a capacitor of claim 1 wherein said conductive node is an electrical path between said anode and said conductive path.

15. The method for forming a capacitor of claim 1 wherein said conductive node comprises a material that is a conductive, non-valve metal.

16. The method for forming a capacitor of claim 1 wherein said conductive node comprises a material selected from a noble metal, stainless steel and carbon.

17. The method for forming a capacitor of claim 1 wherein said node is selected from a semi-conductor and a conductor.

18. The method for forming a capacitor of claim 1 wherein said node has a resistivity of no more than 10 2 ΩM.

19. The method for forming a capacitor of claim 1 wherein said disrupting said conductive path comprises removing or oxidizing at least a portion of said conductive path.

20. The method for forming a capacitor of claim 19 wherein said removing or oxidizing is done by ablation.

21. The method for forming a capacitor of claim 20 wherein said removing or oxidizing is done by laser ablation.

22. The method for forming a capacitor of claim 19 wherein said removing or oxidizing is done by mechanical abrasion.

23. The method of forming a capacitor of claim 19 wherein said removing or oxidizing is done by thermal degradation.