IP Library Granted Patent US 8,487,702
Granted Patent B2
US 8,487,702 · App. 13/238,780 · Granted Jul 16, 2013

Transimpedance amplifier and method thereof

Inventor: Chia-Liang Lin (Fremont, CA)
Assignee: Realtek Semiconductor Corp.
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Quick Facts
Patent No.
US 8,487,702
App. No.
13/238,780
Granted
Jul 16, 2013
Kind
B2
Abstract

A transimpedance method and apparatus are provided. In one implementation an apparatus includes a common-gate amplifier for receiving a first current from a first circuit node and outputting a second current to a second circuit node, and a load circuit coupled to the second circuit node, the load circuit comprising a diode-connected MOS (metal-oxide semiconductor field effect transistor), wherein a gate terminal of the MOS is coupled to a drain terminal of the MOS via a resistor. In one embodiment, a current-mode input is injected to the first circuit node and the apparatus further comprises a biasing circuit for outputting a substantially constant current to the first circuit node.

Claims (29)

1. An apparatus comprising:

a common-gate amplifier for receiving a first current from a first circuit node and outputting a second current to a second circuit node;

a load circuit coupled to the second circuit node, the load circuit comprising a diode-connected MOS transistor, wherein a gate terminal of the MOS transistor is coupled to a drain terminal of the MOS transistor via a resistor; and

a current mirror for receiving a third current from a third circuit node and outputting the first current to the first circuit node.

2. The apparatus of claim 1 , wherein a drain terminal of the MOS transistor is coupled to the second circuit node and a source terminal of the MOS transistor is coupled to a substantially fixed potential node.

3. The apparatus of claim 1 , wherein a source terminal of the MOS transistor is coupled to the second circuit node and the drain terminal of the MOS transistor is coupled to a substantially fixed potential node.

4. The apparatus of claim 1 further comprising a biasing circuit for outputting a substantially fixed current to the first circuit node, wherein a current-mode input is injected to the first circuit node.

5. The apparatus of claim 4 , wherein the biasing circuit is a current source.

6. The apparatus of claim 1 further comprising:

a biasing circuit for outputting a substantially fixed current to the third circuit node, wherein a current-mode input is injected to the third circuit node.

7. The apparatus of claim 6 , wherein the current mirror comprises a first MOS transistor configured in a diode-connected configuration for converting the third current into a voltage signal and a second MOS transistor configured in a common-source amplifier configuration for converting the voltage signal into the first current.

8. The apparatus of claim 7 , wherein the first MOS transistor and the second MOS transistor have the same width-to-length ratio so that the first current is substantially equal to the third current.

9. The apparatus of claim 7 , wherein a gain of the apparatus is adjusted by choosing a width-to-length ratio of the second MOS transistor that is different from a width-to-length ratio of the first MOS transistor.

10. The apparatus of claim 1 , wherein the resistor is sufficiently large to provide isolation between the gate terminal of the diode-connected MOS transistor and the second circuit node.

11. A method comprising:

receiving a first current from a first circuit node;

amplifying the first current using a common-gate amplifier to output a second current to a second circuit node;

converting the second current into a voltage-mode output at the second circuit node by using a load circuit coupled to the second circuit node, the load circuit comprising a diode-connected MOS transistor, wherein a gate terminal of the MOS transistor is coupled to a drain terminal of the MOS transistor via a resistor; and

converting a third current from a third circuit node into the first current using a current mirror.

12. The method of claim 11 , wherein the drain terminal of the MOS transistor is coupled to the second circuit node and a source terminal of the MOS transistor is coupled to a substantially fixed potential node.

13. The method of claim 11 , wherein a source terminal of the MOS transistor is coupled to the second circuit node and the drain terminal of the MOS transistor is coupled to a substantially fixed potential node.

14. The method of claim 11 further comprising:

injecting a current-mode input into the first circuit node; and

establishing a substantially constant current to the first circuit node using a current source.

15. The method of claim 11 further comprising:

injecting a current-mode input into a third circuit node; and

establishing a substantially constant current to the third circuit node using a current source.

16. The method of claim 15 , wherein the current mirror comprises: a first MOS transistor configured in a diode-connected configuration for converting the third current into a voltage signal; and a second MOS transistor configured in a common-source amplifier configuration for converting the voltage signal into the first current.

17. The method of claim 16 further comprising adjusting a gain of the current mirror by adjusting a ratio of the width-to-length ratio of the second MOS transistor to the width-to-length ratio of the first MOS transistor.

Assignments (1)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Sep 21, 2011
From: LIN, CHIA-LIANG
To: REALTEK SEMICONDUCTOR CORP.
Reel/Frame 026943/0114 →
Continuity (1)
Related Publication 20130069727A1 · Mar 21, 2013