Diamond particle mololayer heat spreaders and associated methods
View Patent ↗Thermally regulated semiconductor devices having reduced thermally induced defects are provided, including associated methods. Such a device can include a heat spreader having a monolayer of diamond particles within a thin metal matrix and a semiconductor material thermally coupled to the heat spreader. In one aspect, the coefficient of thermal expansion difference between the heat spreader and the semiconductor material is less than or equal to about 50%.
1. A thermally regulated semiconductor device having reduced thermally induced defects, comprising: a heat spreader including a plurality of monolayers of diamond particles within a thin metal matrix; wherein the heat spreader includes multiple distinct diamond monolayers that are not in direct contact with one another and a semiconductor material thermally coupled to the heat spreader, wherein the coefficient of thermal expansion difference between the heat spreader and the semiconductor material is less than or equal to about 50%.
2. The device of claim 1 , wherein the coefficient of thermal expansion difference between the heat spreader and the semiconductor material is less than or equal to about 5.0 ppm/C°.
3. A thermally regulated semiconductor device having reduced thermally induced defects, comprising:
a heat spreader including:
a thin metal layer;
a first monolayer of diamond particles disposed on one side of the thin metal layer;
a second monolayer of diamond particles disposed on a side of the thin metal layer opposite the first monolayer of diamond particles;
a metal matrix bonding the first and second monolayers of diamond particles to the thin metal layer; and
a semiconductor material thermally coupled to the heat spreader, wherein the coefficient of thermal expansion difference between the heat spreader and the semiconductor material is less than or equal to about 50%.
4. The device of claim 3 , wherein the metal matrix is a member selected from the group consisting of a braze material, a sintered material, an electroplated material, and combinations thereof
5. The device of claim 3 , wherein the coefficient of thermal expansion difference between the heat spreader and the semiconductor material is less than or equal to about 5.0 ppm/C°.
6. The device of claim 3 , wherein substantially all of the diamond particles in the same monolayer are in direct contact with at least one other diamond particle of that monolayer.