Photosensor and method of manufacturing the same

1. A photosensor, comprising:

an intrinsic silicon layer formed on a substrate;

a P-type doped region formed in a same plane as the intrinsic silicon layer; and

an oxide semiconductor layer formed adjacent to the intrinsic silicon layer and overlapping an entire region of the intrinsic silicon layer, the oxide semiconductor functioning as an N-type semiconductor;

wherein the intrinsic silicon layer and the P-type doped region form a horizontal structure, and the oxide semiconductor layer and the intrinsic silicon layer form a vertical structure, the P-type doped region and intrinsic silicon layer directly contact the oxide semiconductor.

2. The photosensor of claim 1 , wherein the oxide semiconductor layer is in direct contact with the entire region of the intrinsic silicon layer.

3. The photosensor of claim 1 , wherein the oxide semiconductor layer is formed under the intrinsic silicon layer, and a sidewall of the P-type doped region is aligned with a sidewall of the oxide semiconductor layer.

4. The photosensor of claim 1 , wherein the oxide semiconductor layer is formed on top of the intrinsic silicon layer, and a sidewall of the intrinsic silicon layer is aligned with a sidewall of the oxide semiconductor layer.

5. The photosensor of claim 1 , wherein the intrinsic silicon layer is one of a polycrystalline silicon layer and an amorphous silicon layer.

6. The photosensor of claim 1 , wherein the oxide semiconductor layer comprises one of Hf oxide, Zn oxide, In oxide, Ga oxide, Sn oxide, Ti oxide, InZn oxide, InSn oxide, HfInZn oxide, GaInZn oxide, and a combination of the same.

7. The photosensor of claim 1 , further comprising an insulating film formed on an entire surface of the substrate having the intrinsic silicon layer, the P-type doped region, and the oxide semiconductor layer.

8. The photosensor of claim 7 , wherein the insulating film comprises a first insulating film and a second insulating film formed directly on the first insulating film.

9. The photosensor of claim 7 , further comprising a first contact hole formed in the insulating film and exposing the P-type doped region and a second contact hole formed in the insulating film and exposing a predetermined region of the oxide semiconductor layer.

10. The photosensor of claim 9 , further comprising a first electrode formed in the first contact hole and on the insulating film so as to be in contact with the P-type doped region and a second electrode formed in the second contact hole and on the insulating film so as to be in contact with the oxide semiconductor layer.

11. The photosensor of claim 1 , further comprising a buffer layer formed between the substrate and one of the intrinsic silicon layer and the oxide semiconductor layer.

12. A photosensor, comprising:

an intrinsic silicon layer formed on a substrate;

a P-type doped region formed in a same plane as the intrinsic silicon layer;

an oxide semiconductor layer formed adjacent to the intrinsic silicon layer and directly contacting an entire region of the intrinsic silicon layer, the oxide semiconductor functioning as an N-type semiconductor, wherein the intrinsic silicon layer and the P-type doped region form a horizontal structure, and the oxide semiconductor layer and the intrinsic silicon layer form a vertical structure;

an insulating film formed on an entire surface of the substrate having the intrinsic silicon layer, the P-type doped region, and the oxide semiconductor layer;

a first contact hole formed in the insulating film and exposing the P-type doped region and a second contact hole formed in the insulating film and exposing a predetermined region of the oxide semiconductor layer;

a first electrode formed in the first contact hole and on the insulating film so as to be in contact with the P-type doped region; and

a second electrode formed in the second contact hole and on the insulating film so as to be in contact with the oxide semiconductor layer,

wherein the P-type doped region and intrinsic silicon layer directly contact the oxide semiconductor.

13. A method of manufacturing a photosensor, the method comprising the steps of:

forming an intrinsic silicon layer on a substrate;

forming a P-type doped region in a region of the intrinsic silicon layer; and

forming an oxide semiconductor layer, which overlaps an entire region of the intrinsic silicon layer and directly contacts the P-type doped region and intrinsic silicon layer,

wherein the steps of forming the intrinsic silicon layer, the P-type doped region and the oxide semiconductor layer on the substrate comprise:

sequentially stacking the oxide semiconductor layer and the intrinsic silicon layer on the substrate;

forming a first photoresist pattern on the intrinsic silicon layer;

etching the intrinsic silicon layer and the oxide semiconductor layer using the first photoresist pattern as an etch mask; and

forming the P-type doped region by implanting group 3 impurity ions into a region of the intrinsic silicon layer.

14. The method of claim 13 , wherein the step of forming the P-type doped region by implanting the group 3 impurity ions into the region of the intrinsic silicon layer comprises:

forming a block film on the intrinsic silicon layer to expose a region of the intrinsic silicon layer in which the P-type doped region is to be formed; and

implanting the group 3 impurity ions into the exposed region of the intrinsic silicon layer.

15. A method of manufacturing a photosensor, the method comprising the steps of:

forming an intrinsic silicon layer on a substrate;

forming a P-type doped region in a region of the intrinsic silicon layer; and

forming an oxide semiconductor layer, which overlaps an entire region of the intrinsic silicon layer, adjacent to the intrinsic silicon layer;

wherein the steps of forming the intrinsic silicon layer, the P-type doped region and the oxide semiconductor layer on the substrate comprise:

forming a first photoresist pattern on the intrinsic silicon layer;

etching the intrinsic silicon layer using the first photoresist pattern as an etch mask;

forming the P-type doped region by implanting group 3 impurity ions into a region of the intrinsic silicon layer;

forming the oxide semiconductor layer on the intrinsic silicon layer;

forming a second photoresist pattern on the oxide semiconductor layer; and

etching the oxide semiconductor layer using the second photoresist pattern as an etch mask.

16. The method of claim 13 , wherein the step of forming the intrinsic silicon layer on the substrate comprises forming an amorphous silicon layer on the substrate, and crystallizing the amorphous silicon layer into a polycrystalline silicon layer.

17. The method of claim 13 , wherein the intrinsic silicon layer and the P-type doped region form a horizontal structure, and the oxide semiconductor layer and the intrinsic silicon layer form a vertical structure.

18. The method of claim 15 , wherein the intrinsic silicon layer and the P-type doped region form a horizontal structure, and the oxide semiconductor layer and the intrinsic silicon layer form a vertical structure.