Image sensor with compact pixel layout
View Patent ↗Solid-state image sensors, specifically image sensor pixels, which have three or four transistors, high sensitivity, low noise, and low dark current, are provided. The pixels have separate active regions for active components, row-shared photodiodes and may also contain a capacitor to adjust the sensitivity, signal-to-noise ratio and dynamic range. The low dark current is achieved by using pinned photodiodes.
1. A method, comprising:
forming, in a first active region of a substrate, a first photodiode of a first pixel row, a second photodiode of a second pixel row, and a floating diffusion node shared by the first photodiode and the second photodiode;
forming a reset transistor in a second active region of the substrate that is separate from the first active region; and
forming a polysilicon bus configured to couple the floating diffusion node to a source region for the reset transistor.
2. The method of claim 1 , further comprising:
forming, in a third active region separate from the first active region, a drive transistor configured to generate a pixel signal based on a voltage of the floating diffusion node.
3. The method of claim 2 , further comprising:
coupling a drain region for the drive transistor to a column bus line that is associated with a pixel column and that is configured to receive the pixel signal in response to an addressing signal; and
coupling a source region for the drive transistor to a row address line that is associated with the first pixel row and the second pixel row and that is configured to apply the addressing signal to the source region for the drive transistor.
4. The method claim 2 , wherein said forming a polysilicon bus comprises forming a capacitor between the floating diffusion node and the drive transistor by forming the polysilicon bus over a portion of a drain region for the drive transistor.
5. The method of claim 2 , further comprising:
forming, in the third active region, a select transistor configured to generate an output signal representative of the pixel signal in response to an addressing signal.
6. The method of claim 5 , further comprising:
coupling a drain region for the select transistor to a column bus line that is associated with a pixel column and that is configured to receive the output signal from the select transistor; and
coupling a gate for the select transistor to a row address line that is associated with the first pixel row and the second pixel row and that is configured to apply the addressing signal to the gate for the select transistor.
7. The method of claim 5 , wherein said forming a drive transistor and said forming a select transistor comprise forming a source region for the drive transistor and a drain region for the select transistor as a common region in the third active region.
8. The method of claim 1 , further comprising:
forming, in the first active region, a first transfer gate configured to transfer charge from the first photodiode to the floating diffusion node in response to a first control signal; and
forming, in the first active region, a second transfer gate configured to transfer charge from the second photodiode to the floating diffusion node in response to a second control signal.
9. A method, comprising:
forming, in a first active region of a substrate, a plurality of photodiodes from a plurality of different pixel rows and a floating diffusion node shared by the plurality of photodiodes;
forming a reset transistor in a second active region of the substrate that is separate from the first active region; and
forming a polysilicon bus configured to couple the floating diffusion node to a source region for the reset transistor.
10. The method of claim 9 , further comprising:
forming, in a third active region separate from the first active region, a drive transistor configured to generate a pixel signal based on a voltage of the floating diffusion node.
11. The method of claim 10 , further comprising:
coupling a drain region for the drive transistor to a column bus line that is associated with a pixel column and that is configured to receive the pixel signal in response to an addressing signal; and
coupling a source region for the drive transistor to a row address line that is associated with the plurality of different pixel rows and that is configured to apply the addressing signal to the source region for the drive transistor.
12. The method claim 10 , wherein said forming a polysilicon bus comprises forming a capacitor between the floating diffusion node and the drive transistor by forming the polysilicon bus over a portion of a drain region for the drive transistor.
13. The method of claim 10 , further comprising:
forming, in the third active region, a select transistor configured to generate an output signal representative of the pixel signal in response to an addressing signal.
14. The method of claim 13 , further comprising:
coupling a drain region for the select transistor to a column bus line that is associated with a pixel column and that is configured to receive the output signal from the select transistor; and
coupling a gate for the select transistor to a row address line that is associated with the plurality of different pixel rows and that is configured to apply the addressing signal to the gate for the select transistor.
15. The method of claim 13 , wherein said forming a drive transistor and said forming a select transistor comprise forming a source region for the drive transistor and a drain region for the select transistor as a common region in the third active region.
16. The method of claim 9 , further comprising:
forming, in the first active region, a plurality of transfer gates configured to transfer charge from the plurality of photodiodes to the floating diffusion node in response to respective control signals.
17. A method, comprising:
resetting a floating diffusion region in a first active region of a substrate using a reset transistor in a second active region of the substrate;
transferring, to the floating diffusion node, charge collected in the first active region by a first photodiode of a first pixel row;
generating a pixel signal based on a voltage of the floating diffusion node with a drive transistor in a third active region of the substrate;
resetting the floating diffusion region using the reset transistor after said generating a pixel signal; and
transferring, to the floating diffusion node, charge collected in the first active region by a second photodiode of a second pixel row.
18. The method of claim 17 , wherein said resetting a floating diffusion node comprises applying a reference voltage to the floating diffusion node via a polysilicon bus coupled between a source region for the reset transistor and the floating diffusion node.
19. The method of claim 17 , wherein said generating a pixel signal comprises applying the voltage at the floating diffusion node to a gate for the drive transistor via a polysilicon bus.
20. The method of claim 17 , further comprising:
transferring charge collected by the first photodiode to a capacitor formed by a drain region for the drive transistor and a polysilicon bus coupled to the floating diffusion region.
21. The method of claim 17 , further comprising applying the pixel signal to a column bus line coupled to a drain region for the drive transistor in response to receiving an addressing signal via a row address coupled to a source region for the drive transistor.
22. The method of claim 17 , further comprising:
receiving an addressing signal via a select transistor in the third active region; and
generating, in response to the address signal, an output signal representative of the pixel signal.
23. The method of claim 17 , further comprising:
receiving an addressing signal via a row address line coupled to a gate for a select transistor in the third active region; and
applying, in response to the address signal, an output signal representative of the pixel signal to a column bus line that is coupled to a drain region for the select transistor.