Heat dissipating material and semiconductor device using same
View Patent ↗Disclosed is a heat dissipating material which is interposed between a heat-generating electronic component and a heat dissipating body. This heat dissipating material contains (A) 100 parts by weight of a silicone gel cured by an addition reaction having a penetration of not less than 100 (according to ASTM D 1403), and (B) 500-2000 parts by weight of a heat conductive filler. Also disclosed is a semiconductor device comprising a heat-generating electronic component and a heat dissipating body, wherein the heat dissipating material is interposed between the heat-generating electronic component and the heat dissipating body.
1. A method of producing a heat dissipating material which is interposed between a heat-generating electronic component and a heat dissipating body, comprising:
a step of mixing (A1) 100 parts by weight of polyorganosiloxane having an average of 0.1 to 2 alkenyl groups within each molecule, the alkenyl group being bonded to a silicon atom, (A2) an amount of polyorganohydrogensiloxane having two or more hydrogen atoms within each molecule, the hydrogen atom being bonded to a silicon atom that the silicon-bonded hydrogen atom is 0.3 to 1.5 mole per one of silicon-bonded alkenyl group of the component (A1), and (A3) a catalytic amount of a platinum based catalyst to form an addition-curable silicone gel composition,
a step of heating the addition-curable silicone gel composition at 60 to 150 degrees C. for 30 to 180 minutes to cure,
a step of adding (B) 500 to 2000 parts by weight of a heat conductive filler to (A) 100 parts by weight of the cured silicone gel and mixing.
2. The method of producing a heat dissipating material according to claim 1 , wherein the cured silicone gel has a penetration (ASTM D1403, ¼ cone) of not less than 100.
3. The method of producing a heat dissipating material according to claim 1 , wherein an unworked penetration at 23° C. of the heat dissipating material is in a range of 200 to 450.