Solid-state imaging device, method of making the same, and imaging apparatus
View Patent ↗A solid-state imaging device includes the following elements. A photoelectric conversion section is arranged in a semiconductor layer having a first surface through which light enters the photoelectric conversion section. A signal circuit section is arranged in a second surface of the semiconductor layer opposite to the first surface. The signal circuit section processes signal charge obtained by photoelectric conversion by the photoelectric conversion section. A reflective layer is arranged on the second surface of the semiconductor layer opposite to the first surface. The reflective layer reflects light transmitted through the photoelectric conversion section back thereto. The reflective layer is composed of a single tungsten layer or a laminate containing a tungsten layer.
1. A solid-state imaging device comprising:
a photoelectric conversion section having oppositely facing first and second sides, the first side being configured to receive light;
a hole accumulation layer arranged over the second side;
a gate electrode arranged over the second side;
a reflective layer arranged over the second side, the reflective layer reflecting light transmitted through the photoelectric conversion section back thereto; and
a first interconnect line arranged over the second side, facing the hole accumulation layer, the first interconnect line being in contact with the reflective layer,
wherein,
the reflective layer is composed of a single tungsten layer or a laminate containing a tungsten layer, and
the reflective layer is arranged between the interconnect line and the hole accumulation layer.
2. The device according to claim 1 , further comprising a polysilicon electrode layer over the hole accumulation layer.
3. The device according to claim 2 , wherein a bias voltage is applied to the polysilicon electrode layer through the reflective layer.
4. The device according to claim 1 , wherein the reflective layer is arranged over a periphery of the photoelectric conversion section.
5. The device according to claim 4 , wherein:
the first interconnection layer has a function of reflecting light transmitted through the photoelectric conversion section back thereto, and
the first interconnection layer is composed of a single tungsten layer or a laminate containing a tungsten layer.
6. The device according to claim 1 , wherein the reflective layer is formed by filling a hole in the insulating layer over the photoelectric conversion section.
7. The device according to claim 1 , wherein the reflective layer is arranged on at least the inner surface of a hole in the insulating layer over the photoelectric conversion section.
8. An imaging apparatus comprising:
a collection optical unit that collects incident light;
a solid-state imaging device that receives the light collected by the collection optical unit and converts the light into an electrical signal; and
a signal processing unit that processes the electrical signal,
wherein,
the solid-state imaging device includes (a) a photoelectric conversion section having oppositely facing first and second sides, the first side being configured to receive light, (b) a hole accumulation layer arranged over the second side, (c) a gate electrode arranged over the second side, (d) a reflective layer arranged over the second side, the reflective layer reflecting light transmitted through the photoelectric conversion section back thereto, and (e) a first interconnect line arranged over the second side, facing the hole accumulation layer, the first interconnect line being in contact with the reflective layer,
wherein,
the reflective layer is composed of a single tungsten layer or a laminate containing a tungsten layer, and
the reflective layer is arranged between the interconnect line and the hole accumulation layer.
9. The imaging apparatus according to claim 8 , wherein:
the interconnection layer extending over the photoelectric conversion section has a function of reflecting light transmitted through the photoelectric conversion section back thereto; and
the interconnection layer is composed of a single tungsten layer or a laminate containing a tungsten layer.