ORGANIC LIGHT-EMITTING DISPLAY DEVICE
An organic light-emitting display device including a substrate; a thin film transistor on the substrate, the thin film transistor including an active layer, a gate electrode, and source and drain electrodes that are electrically connected to the active layer; a first resonance layer at the same layer level as the gate electrode; a second resonance layer on the first resonance layer, the second resonance layer being at the same layer level as the source and drain electrodes, and electrically connected to the source and drain electrodes; an insulating layer between the second resonance layer and the first resonance layer; an intermediate layer on the second resonance layer, the intermediate layer including a light-emitting layer; and an opposite electrode on the intermediate layer.
1 . An organic light-emitting display device comprising:
a substrate;
a thin film transistor on the substrate, the thin film transistor comprising an active layer, a gate electrode, and source and drain electrodes electrically connected to the active layer;
a first resonance layer at the same layer level as the gate electrode;
a second resonance layer on the first resonance layer, the second resonance layer being at the same layer level as the source and drain electrodes, and electrically connected to the source and drain electrodes;
an insulating layer between the second resonance layer and the first resonance layer;
an intermediate layer on the second resonance layer, the intermediate layer comprising a light-emitting layer; and
an opposite electrode on the intermediate layer.
2 . The organic light-emitting display device of claim 1 , wherein the second resonance layer comprises a semi-transmissive metal.
3 . The organic light-emitting display device of claim 2 , wherein the semi-transmissive metal comprises at least one selected from the group consisting of silver (Ag), an Ag alloy, aluminum (Al), and an Al alloy.
4 . The organic light-emitting display device of claim 2 , wherein the second resonance layer has a thickness of 300 Å or less.
5 . The organic light-emitting display device of claim 1 , wherein the thin film transistor comprises:
a first insulating layer covering the active layer, wherein the gate electrode is on the first insulating layer; and
a second insulating layer covering the gate electrode, wherein the source and drain electrodes are on the second insulating layer.
6 . The organic light-emitting display device of claim 1 , wherein the first resonance layer has a greater refractive index than that of the insulating layer.
7 . The organic light-emitting display device of claim 6 , wherein the first resonance layer comprises a transparent conductive material.
8 . The organic light-emitting display device of claim 7 , wherein the transparent conductive material comprises at least one selected from the group consisting of indium tin oxide (ITO), indium zinc oxide (IZO), zinc oxide (ZnO), indium oxide (In 2 O 3 ), indium gallium oxide (IGO), and aluminum zinc oxide (AZO).
9 . The organic light-emitting display device of claim 6 , wherein the first resonance layer comprises a metal oxide with a high refractive index.
10 . The organic light-emitting display device of claim 9 , wherein the metal oxide comprises at least one selected from the group consisting of titanium oxide (TiO 2 ), niobium oxide (Nb 2 O 5 ), tantalum oxide (Ta 2 O 5 ), and aluminum oxide (Al 2 O 3 ).
11 . The organic light-emitting display device of claim 1 , wherein the first resonance layer comprises a semi-transmissive metal.
12 . The organic light-emitting display device of claim 11 , wherein the semi-transmissive metal comprises at least one selected from the group consisting of silver (Ag), an Ag alloy, aluminum (Al), and an Al alloy.
13 . The organic light-emitting display device of claim 12 , wherein the first resonance layer has a thickness of 300 Å or less.
14 . The organic light-emitting display device of claim 1 , wherein the opposite electrode is a reflective electrode.
15 . An organic light-emitting display device comprising:
a substrate;
a plurality of pixels on the substrate;
a thin film transistor comprising an active layer, a gate electrode, and source and drain electrodes electrically connected to the active layer;
a first resonance layer at the same layer level as the gate electrode;
a second resonance layer on the first resonance layer, the second resonance layer being at the same layer level as the source and drain electrodes, and electrically connected to the source and drain electrodes;
an insulating layer between the second resonance layer and the first resonance layer;
an intermediate layer on the second resonance layer, the intermediate layer comprising a light-emitting layer; and
an opposite electrode on the intermediate layer,
wherein at least one pixel among the pixels has a resonance distance between the opposite electrode and the second resonance layer that is different from the others of the pixels.
16 . The organic light-emitting display device of claim 15 , wherein the resonance distance is adjusted by a thickness of an intermediate layer included in each of the pixels.
17 . The organic light-emitting display device of claim 15 , wherein the intermediate layer comprises at least one selected from the group consisting of a hole injection layer (HIL), a hole transport layer (HTL), an electron injection layer (EIL), and an electron transport layer (ETL).
18 . The organic light-emitting display device of claim 15 , wherein the resonance distance is adjusted by a thickness of a light-emitting layer included in each of the pixels.
19 . The organic light-emitting display device of claim 15 , wherein the second resonance layer comprises a semi-transmissive metal.
20 . The organic light-emitting display device of claim 15 , wherein the opposite electrode is a reflective electrode.