Polycrystalline diamond materials and related products
Embodiments relate to methods of fabricating PCD materials by subjecting a mixture that exhibits a broad diamond particle size distribution to an HPHT process, PCD materials so-formed, and PDCs including a polycrystalline diamond table comprising such PCD materials. In an embodiment, a PCD material includes a plurality of bonded diamond grains that exhibit a substantially unimodal diamond grain size distribution characterized, at least in part, by a parameter θ that is less than about 1.0. θ = x 6 · σ , where x is the average grain size of the substantially unimodal diamond grain size distribution, and σ is the standard deviation of the substantially unimodal diamond grain size distribution.
1. A polycrystalline diamond material, comprising:
a plurality of bonded diamond grains, the plurality of bonded diamond grains exhibiting a substantially unimodal diamond grain size distribution characterized, at least in part, by a parameter θ that is about 0.25 to about 1.0; and
wherein:
θ
=
x
6
·
σ
;
x is the average grain size of the substantially unimodal diamond grain size distribution, and is about 5 μm to about 30 μm; and
σ is the standard deviation of the substantially unimodal diamond grain size distribution.
2. The polycrystalline diamond material of claim 1 wherein the parameter θ is about 0.3 to about 0.9.
3. The polycrystalline diamond material of claim 1 wherein the parameter θ is about 0.3 to about 0.7.
4. The polycrystalline diamond material of claim 1 wherein the parameter θ is about 0.5 to about 0.7.
5. The polycrystalline diamond material of claim 1 wherein the parameter θ is about 0.3 to about 0.4.
6. The polycrystalline diamond material of claim 1 wherein σ is about 2 μm to about 15 μm.
7. The polycrystalline diamond material of claim 1 wherein x is about 10 μm to about 20 μm, σ is about 4 μm to about 10 μm, and the parameter θ is about 0.3 to about 0.7.
8. The polycrystalline diamond material of claim 1 in which a thermal stability thereof is at least about as thermally stable as a partially leached polycrystalline diamond material having a leach depth of about 60 μm to about 70 μm and a different diamond grain size distribution.
9. A polycrystalline diamond compact, comprising a polycrystalline diamond table including the polycrystalline diamond material of claim 1 ; and
a substrate bonded to the polycrystalline diamond table.
10. The polycrystalline diamond compact of claim 9 wherein the substrate comprises a cemented-carbide material.
11. The polycrystalline diamond compact of claim 9 , being configured as a cutting element.
12. The polycrystalline diamond compact of claim 9 , being configured as a bearing element.
13. The polycrystalline diamond compact of claim 9 , being configured as at least part of a wire drawing die.
14. A polycrystalline diamond material, comprising:
a plurality of bonded diamond grains, the plurality of bonded diamond grains exhibiting a substantially unimodal diamond grain size distribution characterized, at least in part, by a parameter θ that is about 0.3 to about 0.7; and
wherein:
θ
=
x
6
·
σ
;
x is the average grain size of the substantially unimodal diamond grain size distribution and is about 10 μm to about 20 μm; and
σ is the standard deviation of the substantially unimodal diamond grain size distribution.
15. The polycrystalline diamond material of claim 14 wherein the parameter θ is about 0.5 to about 0.7.
16. The polycrystalline diamond material of claim 14 wherein the parameter θ is about 0.3 to about 0.4.
17. The polycrystalline diamond material of claim 14 wherein x is about 12 μm to about 15 μm and σ is about 6 μm to about 8.5 μm.
18. The polycrystalline diamond material of claim 14 wherein σ is about 4 μm to about 10 μm.
19. A polycrystalline diamond material, comprising:
a plurality of bonded diamond grains defining a plurality of interstitial regions, the plurality of bonded diamond grains exhibiting a substantially unimodal diamond grain size distribution characterized, at least in part, by a parameter θ that is about 0.3 to about 0.9;
wherein:
θ
=
x
6
·
σ
;
x is the average grain size of the substantially unimodal diamond grain size distribution and is about 10 μm to about 20 μm;
σ is the standard deviation of the substantially unimodal diamond grain size distribution; and
a catalyst material is disposed in at least a portion of the plurality of interstitial regions.