IP Library Granted Patent US 9,442,594
Granted Patent B2
US 9,442,594 · App. 13/247,082 · Granted Sep 13, 2016

Resistance changing sensor

Inventors: Mark Andrew Graham (Linthorpe, GB); David Lussey (Tunstall, GB)
Assignee: Peratech Holdco Limited
G06F3/0416Y10T29/49004
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Quick Facts
Patent No.
US 9,442,594
App. No.
13/247,082
Granted
Sep 13, 2016
Kind
B2
Abstract

A sensor is configured to experience resistance changes in response to an external interaction. The sensor comprises a first layer of a conductive material having a first electrode connected thereto; a second intermediate layer of a material having a resistance sensitive to said external interaction; and a third layer including a first set of fingers interdigitated with a second set of fingers. A second electrode is attached to the first set of fingers and a third electrode is attached to the second set of fingers. The second layer includes a quantum tunnelling composite and provides electrical conduction between the first layer and the third layer. In a preferred embodiment, the first electrode is connected to either one of said second electrode or said third electrode to complete a parallel connection. A method is described for constructing such a sensor.

Claims (38)

1. A sensor configured to experience changes in an electrical characteristic in response to an external interaction, said sensor comprising:

a first layer, a second layer and a third layer;

said first layer being comprised of a conductive material;

a first electrode connected to said first layer;

said second layer being interposed between said first layer and said third layer;

said second layer providing electrical conduction between said first layer and said third layer and being formed of a quantum tunnelling composite having an electrical characteristic sensitive to an external interaction;

said third layer being comprised of a first set of conductive fingers interdigitated with a second set of conductive fingers;

a second electrode attached to said first set of fingers; and

a third electrode attached to said second set of fingers;

said first electrode being electrically connected to a selected one electrode of said second electrode and said third electrode, thereby establishing a parallel electrical connection between said selected one electrode and said first electrode, while leaving a remaining non-selected one electrode of said second electrode and said third electrode;

whereby upon application of a voltage between the parallel connection and the non-selected one electrode, a measurement dependent upon the electrical characteristic of said second layer will be made available.

2. The sensor of claim 1 , wherein said quantum tunnelling composite is printed directly onto the first layer of a conductive material having a first electrode connected thereto.

3. The sensor of claim 1 , wherein said quantum tunnelling composite is printed directly onto said third layer comprised of a first set of fingers interdigitated with a second set of fingers.

4. The sensor of claim 1 , wherein said second layer is formed of a composite material comprising a plurality of conductive or semi-conductive particles dispersed within a polymeric material.

5. The sensor of claim 1 , wherein said first layer of conductive material is comprised of a metallic material.

6. The sensor of claim 1 , wherein said metallic material includes at least one of silver-loaded ink and carbon loaded ink.

7. The sensor of claim 1 , wherein said first layer of conductive material is comprised of a fabric.

8. The sensor of claim 1 , wherein said third layer is comprised of a metallic material.

9. The sensor of claim 8 , wherein said metallic material includes at least one of silver-loaded ink and carbon loaded ink.

10. The sensor of claim 1 , wherein said external interaction comprises a mechanical interaction.

11. The sensor of claim 10 , wherein said mechanical interaction includes the application of pressure.

12. The sensor of claim 1 , wherein said external interaction includes the application of radiation.

13. An electrical circuit including the sensor of claim 1 , said electrical circuit comprising a voltage source configured to apply a voltage between said parallel electrical connection and the non-selected one electrode of said third electrode and said second electrode, and a measurement device configured to provide a measurement dependent upon the electrical resistance of said second layer.

14. An electrical circuit including the sensor of claim 1 , said electrical circuit comprising a voltage source configured to apply a voltage between said parallel electrical connection and the non-selected one electrode of said third electrode and said second electrode, and a measurement device configured to provide a measurement dependent upon electrical impedance of said sensor.

15. An electrical circuit including the sensor of claim 1 , said electrical circuit comprising a voltage source configured to apply a voltage between said parallel electrical connection and the non-selected one electrode of said third electrode and said second electrode, and a measurement device configured to provide a measurement dependent upon current flowing from said parallel electrical connection and the non-selected one electrode of said third electrode and said second electrode.

16. A method of constructing a sensor for detecting an external interaction by effecting a change in resistance, the method comprising the steps of:

providing a first layer of a conductive material;

attaching a first electrode to said first layer of a conductive material;

providing a second layer of an electrically conductive material having a resistance sensitive to external interactions;

providing a third layer consisting of a first set of fingers interdigitated with a second set of fingers;

interposing said second layer between said first layer and said third layer thereby establishing electrical conduction between said first layer and said third layer;

attaching a second electrode to said first set of fingers;

attaching a third electrode to said second set of fingers;

connecting said first electrode to said second electrode to establish a parallel connection between said first electrode and said second electrode;

applying a voltage between said parallel connection and the third electrode; and

measuring an electrical signal to obtain a measurement dependent upon current flowing from said parallel connection to the third electrode.

17. The method of claim 16 , wherein said second layer is fabricated from quantum tunnelling composite.

18. The method of claim 16 wherein said external interaction comprises pressure applied to said sensor.

Assignments (6)
LIEN Recorded Oct 28, 2024
From: PERATECH IP LTD.; PERATECH HOLDCO LTD.
To: DARK MATTER LEND CO LTD.
Reel/Frame 069272/0745 →
LICENSE Recorded Oct 28, 2024
From: PERATECH IP LTD.
To: PERATECH HOLDCO LTD.
Reel/Frame 069444/0115 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Sep 5, 2024
From: PERATECH HOLDCO LTD.
To: PERATECH IP LTD
Reel/Frame 068840/0351 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Nov 26, 2014
From: PERATECH LIMITED
To: PERATECH HOLDCO LIMITED
Reel/Frame 034271/0549 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Sep 24, 2014
From: PERATECH LIMITED
To: PERATECH HOLDCO LIMITED
Reel/Frame 033803/0653 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Nov 15, 2011
From: GRAHAM, MARK ANDREW; LUSSEY, DAVID
To: PERATECH LIMITED
Reel/Frame 027232/0357 →
Priority Claims (2)
GB 1016329.3 · Sep 29, 2010 · national
GB 1016330.1 · Sep 29, 2010 · national
Continuity (1)
Related Publication 20120074970A1 · Mar 29, 2012