Resistance changing sensor
A sensor is configured to experience resistance changes in response to an external interaction. The sensor comprises a first layer of a conductive material having a first electrode connected thereto; a second intermediate layer of a material having a resistance sensitive to said external interaction; and a third layer including a first set of fingers interdigitated with a second set of fingers. A second electrode is attached to the first set of fingers and a third electrode is attached to the second set of fingers. The second layer includes a quantum tunnelling composite and provides electrical conduction between the first layer and the third layer. In a preferred embodiment, the first electrode is connected to either one of said second electrode or said third electrode to complete a parallel connection. A method is described for constructing such a sensor.
1. A sensor configured to experience changes in an electrical characteristic in response to an external interaction, said sensor comprising:
a first layer, a second layer and a third layer;
said first layer being comprised of a conductive material;
a first electrode connected to said first layer;
said second layer being interposed between said first layer and said third layer;
said second layer providing electrical conduction between said first layer and said third layer and being formed of a quantum tunnelling composite having an electrical characteristic sensitive to an external interaction;
said third layer being comprised of a first set of conductive fingers interdigitated with a second set of conductive fingers;
a second electrode attached to said first set of fingers; and
a third electrode attached to said second set of fingers;
said first electrode being electrically connected to a selected one electrode of said second electrode and said third electrode, thereby establishing a parallel electrical connection between said selected one electrode and said first electrode, while leaving a remaining non-selected one electrode of said second electrode and said third electrode;
whereby upon application of a voltage between the parallel connection and the non-selected one electrode, a measurement dependent upon the electrical characteristic of said second layer will be made available.
2. The sensor of claim 1 , wherein said quantum tunnelling composite is printed directly onto the first layer of a conductive material having a first electrode connected thereto.
3. The sensor of claim 1 , wherein said quantum tunnelling composite is printed directly onto said third layer comprised of a first set of fingers interdigitated with a second set of fingers.
4. The sensor of claim 1 , wherein said second layer is formed of a composite material comprising a plurality of conductive or semi-conductive particles dispersed within a polymeric material.
5. The sensor of claim 1 , wherein said first layer of conductive material is comprised of a metallic material.
6. The sensor of claim 1 , wherein said metallic material includes at least one of silver-loaded ink and carbon loaded ink.
7. The sensor of claim 1 , wherein said first layer of conductive material is comprised of a fabric.
8. The sensor of claim 1 , wherein said third layer is comprised of a metallic material.
9. The sensor of claim 8 , wherein said metallic material includes at least one of silver-loaded ink and carbon loaded ink.
10. The sensor of claim 1 , wherein said external interaction comprises a mechanical interaction.
11. The sensor of claim 10 , wherein said mechanical interaction includes the application of pressure.
12. The sensor of claim 1 , wherein said external interaction includes the application of radiation.
13. An electrical circuit including the sensor of claim 1 , said electrical circuit comprising a voltage source configured to apply a voltage between said parallel electrical connection and the non-selected one electrode of said third electrode and said second electrode, and a measurement device configured to provide a measurement dependent upon the electrical resistance of said second layer.
14. An electrical circuit including the sensor of claim 1 , said electrical circuit comprising a voltage source configured to apply a voltage between said parallel electrical connection and the non-selected one electrode of said third electrode and said second electrode, and a measurement device configured to provide a measurement dependent upon electrical impedance of said sensor.
15. An electrical circuit including the sensor of claim 1 , said electrical circuit comprising a voltage source configured to apply a voltage between said parallel electrical connection and the non-selected one electrode of said third electrode and said second electrode, and a measurement device configured to provide a measurement dependent upon current flowing from said parallel electrical connection and the non-selected one electrode of said third electrode and said second electrode.
16. A method of constructing a sensor for detecting an external interaction by effecting a change in resistance, the method comprising the steps of:
providing a first layer of a conductive material;
attaching a first electrode to said first layer of a conductive material;
providing a second layer of an electrically conductive material having a resistance sensitive to external interactions;
providing a third layer consisting of a first set of fingers interdigitated with a second set of fingers;
interposing said second layer between said first layer and said third layer thereby establishing electrical conduction between said first layer and said third layer;
attaching a second electrode to said first set of fingers;
attaching a third electrode to said second set of fingers;
connecting said first electrode to said second electrode to establish a parallel connection between said first electrode and said second electrode;
applying a voltage between said parallel connection and the third electrode; and
measuring an electrical signal to obtain a measurement dependent upon current flowing from said parallel connection to the third electrode.
17. The method of claim 16 , wherein said second layer is fabricated from quantum tunnelling composite.
18. The method of claim 16 wherein said external interaction comprises pressure applied to said sensor.