IP Library Granted Patent US 8,833,908
Granted Patent B2
US 8,833,908 · App. 13/248,300 · Granted Sep 16, 2014

Planar heater structures for ejection devices

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Quick Facts
Patent No.
US 8,833,908
App. No.
13/248,300
Granted
Sep 16, 2014
Kind
B2
Abstract

Disclosed is a method for fabricating a planar heater structure for an ejection device. The method includes providing a substrate wafer having a plurality of plugs configured therewithin. The method also includes depositing and patterning a layer of a second metallic material over the substrate wafer, providing a layer of a dielectric material of a predetermined thickness over the patterned layer of the second metallic material, and conducting chemical mechanical polishing of the layer of the dielectric material to form a planarized top surface while exposing the patterned layer of the second metallic material. The method further includes cleaning the planarized top surface, depositing and patterning a resistor film over the planarized top surface, depositing one or more blanket films over the patterned resistor film, and patterning and etching the one or more blanket films. Further disclosed are planar heater structures and additional methods for fabricating the planar heater structures.

Claims (13)

1. A planar heater structure for an ejection device, the planar heater structure comprising:

a substrate wafer comprising a plurality of electrical connections configured therewithin, each electrical connection of the plurality of electrical connections being composed of a first metallic material, said each electrical connection embedded in the substrate wafer such that a topmost surface is coplanar with a top surface of the substrate wafer and said each electrical connection is separated from another said each electrical connection;

a layer of a dielectric material disposed one of over the substrate wafer and within a top portion of the substrate wafer;

a planarized top surface configured over the substrate wafer and the layer of the dielectric material by chemical mechanical polishing;

a resistor film disposed over the planarized top surface and extending to form an electrical connection from one to a next of the plurality of electrical connections embedded in the substrate wafer; and

one or more blanket films disposed over the resistor film.

2. The planar heater structure of claim 1 , wherein the layer of the dielectric material is disposed over the substrate wafer and comprises a plurality of plugs composed of a second metallic material such that each plug of the plurality of plugs is coupled with the each electrical connection of the plurality of electrical connections, and wherein each of the first metallic material and the second metallic material is one of aluminum and tungsten, and wherein at least one of the layer of the dielectric material and the second metallic material is processed by chemical mechanical polishing.

3. The planar heater structure of claim 1 , wherein the layer of the dielectric material is disposed within the top portion of the substrate wafer after being provided over the substrate wafer and processed by chemical mechanical polishing.

4. A planar heater structure for an ejection device, the planar heater structure comprising:

a substrate wafer comprising a plurality of vertically configured plugs therewithin, each of the plugs being composed of a first metallic material embedded in the substrate wafer and separated from other plugs embedded in the substrate wafer and having an upper surface coplanar with a top portion of the substrate wafer;

a plurality of second metallic materials disposed over said each of the plugs to cover an entirety of the upper surfaces of the plugs with the top portion of the substrate wafer intervening laterally between the plugs, the second metallic materials forming an electrical connection to the plugs;

a layer of a dielectric material disposed on the top portion of the substrate wafer intervening laterally between the plugs and forming a planarized top surface coextensive with a top of each of the plurality of second metallic materials; and

a resistor film disposed over the planarized top surface and extending to form an electrical connection from a first to a second said top of a first and a second said second metallic material to form an electrical connection from one to a next of the plurality of plugs embedded in the substrate wafer.

Assignments (8)
SECURITY INTEREST Recorded Jan 5, 2026
From: LEXMARK INTERNATIONAL, INC.
To: BANK TRUST COMPANY, NATIONAL ASSOCIATION
Reel/Frame 074202/0192 →
SECURITY INTEREST Recorded Jan 5, 2026
From: LEXMARK INTERNATIONAL, INC.
To: BANK TRUST COMPANY, NATIONAL ASSOCIATION
Reel/Frame 074202/0293 →
SECURITY INTEREST Recorded Sep 23, 2025
From: LEXMARK INTERNATIONAL, INC.
To: CITIBANK, N.A.
Reel/Frame 073007/0118 →
SECURITY INTEREST Recorded Sep 23, 2025
From: LEXMARK INTERNATIONAL, INC.
To: JEFFERIES FINANCE LLC
Reel/Frame 073007/0346 →
RELEASE OF SECURITY INTEREST Recorded Jan 18, 2024
From: CHINA CITIC BANK CORPORATION LIMITED, GUANGZHOU BRANCH, AS COLLATERAL AGENT
To: LEXMARK INTERNATIONAL, INC.
Reel/Frame 066345/0026 →
CORRECTIVE ASSIGNMENT TO CORRECT THE INCORRECT U.S. PATENT NUMBER PREVIOUSLY RECORDED AT REEL: 046989 FRAME: 0396. ASSIGNOR(S) HEREBY CONFIRMS THE PATENT SECURITY AGREEMENT. Recorded Oct 24, 2018
From: LEXMARK INTERNATIONAL, INC.
To: CHINA CITIC BANK CORPORATION LIMITED, GUANGZHOU BRANCH, AS COLLATERAL AGENT
Reel/Frame 047760/0795 →
PATENT SECURITY AGREEMENT Recorded Aug 30, 2018
From: LEXMARK INTERNATIONAL, INC.
To: CHINA CITIC BANK CORPORATION LIMITED, GUANGZHOU BRANCH, AS COLLATERAL AGENT
Reel/Frame 046989/0396 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Oct 19, 2011
From: GUAN, YIMIN; JOYNER, BURTON, II; REITMEIER, ZACH
To: LEXMARK INTERNATIONAL, INC.
Reel/Frame 027085/0363 →