IP Library Granted Patent US 8,450,690
Granted Patent B2
US 8,450,690 · App. 13/252,821 · Granted May 28, 2013

Thermal imager using metamaterials

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Quick Facts
Patent No.
US 8,450,690
App. No.
13/252,821
Granted
May 28, 2013
Kind
B2
Abstract

An apparatus and method are disclosed for detecting terahertz radiation at room temperature. A detecting pixel includes a sub-wavelength split-ring resonator, and is mechanically coupled to (but thermally decoupled from) a substrate via a cantilever formed from two materials that have a significant mismatch in their thermal expansion coefficients. Incident radiation causes the split-ring resonator to resonate, thereby generating heat that is transferred to the cantilever, causing the cantilever to flex. An optical readout system includes a secondary light source, such as a laser, that shines on a reflective surface on the pixel, whereby a photodiode detects the reflected light and permits calculation of a relative deflection of the pixel in the nanometer range. An exemplary detector has a noise equivalent power rating of approximately 60 pW/√Hz.

Claims (27)

1. An apparatus for detecting terahertz radiation at room temperature, the apparatus comprising:

a substrate; and

a detection structure including (a) an optically reflective surface, and (b) a radiation absorption pad having formed thereon a split-ring resonator, the split-ring resonator having a characteristic dimension, and an electrical resonance frequency corresponding to a wavelength of the terahertz radiation that is greater than the characteristic dimension;

the detection structure being coupled to the substrate by a flexible cantilever comprising (a) a plurality of actuation legs formed from two materials having substantially different coefficients of thermal expansion, and (b) a plurality of thermal isolation legs having substantially lower thermal conductivity than the actuation legs.

2. An apparatus according to claim 1 , wherein the substrate comprises a silicon (Si) wafer or a gallium arsenide (GaAs) wafer.

3. An apparatus according to claim 1 , wherein the detection structure comprises a silicon nitride (SiN x ) thin film.

4. An apparatus according to claim 1 , wherein the optically reflective surface is formed from gold (Au).

5. An apparatus according to claim 1 , wherein the plurality of actuation legs are formed from layers of silicon nitride (SiN x ) and gold (Au).

6. An apparatus according to claim 1 , wherein the plurality of thermal isolation legs are formed from silicon nitride (SiN x ).

7. An apparatus according to claim 1 , wherein the wavelength of the terahertz radiation is between 30 μm and 3000 μm.

8. An apparatus according to claim 1 , wherein the characteristic dimension of the split-ring resonator is between 5 μm and 500 μm.

9. An apparatus according to claim 1 , wherein the radiation absorption pad has formed thereon a plurality of split-ring resonators.

10. A method of imaging an object, the method comprising:

illuminating the object with terahertz radiation having a wavelength; and

absorbing, in a detector, a portion of the terahertz radiation that has interacted with the object, the detector comprising a plurality of pixels that move when heated, each pixel having formed thereon a split-ring resonator, at least one of the split-ring resonators having a characteristic dimension that is less than the wavelength of the terahertz radiation and an electrical resonance frequency that corresponds to the wavelength of the terahertz radiation;

wherein absorption of the portion of radiation causes the at least one split-ring resonator to generate sufficient heat to cause movement of the pixel on which it is formed.

11. A method according to claim 10 , wherein the wavelength of the terahertz radiation is between 30 μm and 3000 μm.

12. A method according to claim 10 , wherein the characteristic dimension of the split-ring resonator is between 5 μm and 500 μm.

13. A method according to claim 10 , wherein the detector further comprises a fixed substrate, and wherein each pixel in the plurality of pixels is attached to the substrate by a cantilever that flexes when heated.

14. A method according to claim 13 , wherein each cantilever comprises (a) a plurality of actuation legs formed from two materials having substantially different coefficients of thermal expansion, and (b) a plurality of thermal isolation legs having substantially lower thermal conductivity than the actuation legs.

15. A method according to claim 10 , wherein a given pixel has formed thereon a plurality of split-ring resonators, and absorption of the portion of radiation causes the plurality of split-ring resonators to generate sufficient heat to cause movement of the given pixel.

16. A method according to claim 10 , further comprising:

illuminating the detector pixels with a secondary light source; and

measuring light, from the secondary light source, that is reflected from the surface of a pixel to determine a relative deflection of the pixel.

17. A method according to claim 16 , wherein the secondary light source is a laser.

18. A method according to claim 10 , wherein each pixel absorbs a different portion of the terahertz radiation that interacted with the object, thereby causing non-uniform deflection of the pixels.

19. A method according to claim 18 , further comprising producing a raster image having pixel data, each pixel datum being a function of the relative deflection of a corresponding detector pixel.

Assignments (3)
CHANGE OF NAME Recorded May 21, 2018
From: SANDIA CORPORATION
To: NATIONAL TECHNOLOGY & ENGINEERING SOLUTIONS OF SANDIA, LLC
Reel/Frame 046197/0885 →
CONFIRMATORY LICENSE Recorded Feb 23, 2015
From: SANDIA CORPORATION
To: U.S. DEPARTMENT OF ENERGY
Reel/Frame 035002/0078 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Oct 29, 2014
From: SHANER, ERIC
To: SANDIA CORPORATION
Reel/Frame 034060/0984 →