Optoelectronic semiconductor bodies having a reflective layer system
View Patent ↗An optoelectronic semiconductor body ( 1 ) having an active semiconductor layer sequence ( 10 ) and a reflective layer system ( 20 ) is described. The reflective layer system ( 20 ) comprises a first radiation-permeable layer ( 21 ), which adjoins the semiconductor layer sequence ( 10 ), and a metal layer ( 23 ) on the side of the first radiation-permeable layer ( 21 ) facing away from the semiconductor layer sequence ( 10 ). The first radiation-permeable layer ( 21 ) contains a first dielectric material. Between the first radiation-permeable layer ( 21 ) and the metal layer ( 23 ) there is disposed a second radiation-permeable layer ( 22 ) which contains an adhesion-improving material. The metal layer ( 23 ) is applied directly to the adhesion-improving material. The adhesion-improving material differs from the first dielectric material and is selected such that the adhesion of the metal layer ( 23 ) is improved in comparison with the adhesion on the first dielectric material.
1. Optoelectronic semiconductor body having:
an active semiconductor layer sequence;
and a reflective layer system including
a first radiation-permeable layer adjoining the semiconductor layer sequence; the first radiation-permeable layer including:
a first dielectric material, and
a metal layer which is disposed on the side of the first radiation-permeable layer facing away from the semiconductor layer sequence,
wherein between the first radiation-permeable layer and the metal layer there is disposed a second radiation-permeable layer including an adhesion-improving material, to which the metal layer is directly applied, and the adhesion-improving material differs from the first dielectric material and is selected such that the adhesion of the metal layer on the adhesion-improving material is improved in comparison with the adhesion on the first dielectric material,
wherein the first radiation-permeable layer consists of silicon dioxide, the second radiation-permeable layer has a layer thickness of 10 nm or less, the second radiation-permeable layer adjoins the first radiation-permeable layer, and the adhesion-improving material is a nitrogen-containing compound and/or transparent conducting oxide.
2. Optoelectronic semiconductor body as claimed in claim 1 , wherein the adhesion-improving material is a nitrogen-containing compound.
3. Optoelectronic semiconductor body as claimed in claim 2 , wherein the nitrogen-containing compound is selected from the group consisting of AlN, Si x N y , Si 3 N 4 , TaN.
4. Optoelectronic semiconductor body as claimed in claim 1 , wherein the adhesion-improving material is a transparent conducting oxide.
5. Optoelectronic semiconductor body as claimed in claim 4 , wherein the adhesion-improving material is indium tungsten oxide, indium zinc oxide or zinc oxide.
6. Optoelectronic semiconductor body as claimed in claim 1 , wherein the metal layer comprises a multiple layer structure which contains an adhesion-promotion layer, which faces towards the semiconductor layer sequence and is applied directly to the adhesion-improving material, and a reflector layer on the side of the adhesion-promotion layer facing away from the semiconductor layer sequence.
7. Optoelectronic semiconductor body as claimed in claim 6 , wherein the adhesion-promotion layer contains at least one of the following metals or consists of one of these metals: Ti, Ta, Al, Pt, Pd, Cr, Ni.
8. Optoelectronic semiconductor body as claimed in claim 7 , wherein the adhesion-promotion layer has a layer thickness of 1 nm or less.
9. Optoelectronic semiconductor body as claimed in claim 1 , wherein the metal layer contains at least one of the following metals or consists of one of these metals: Al, Ag, Au.
10. Optoelectronic semiconductor body as claimed in claim 6 , wherein the reflector layer contains at least one of the following metals or consists of one of these metals: Al, Ag, Au.
11. Optoelectronic semiconductor body having
an active semiconductor layer sequence and
a reflective layer system which comprises a first radiation-permeable layer, which adjoins the semiconductor layer sequence and contains a first dielectric material, and a metal layer which is disposed on the side of the first radiation-permeable layer facing away from the semiconductor layer sequence, wherein,
between the first radiation-permeable layer and the metal layer there is disposed a second radiation-permeable layer which contains an adhesion-improving material, to which the metal layer is directly applied, and
the adhesion-improving material differs from the first dielectric material,
the first radiation-permeable layer is a continuous and contiguous layer without interruptions which covers the whole semiconductor layer sequence,
the first radiation-permeable layer consists of silicon dioxide,
the second radiation-permeable layer has a layer thickness of 10 nm or less,
the adhesion-improving material is a nitrogen-containing compound,
the nitrogen-containing compound is selected from the group consisting of AlN, SixNy, Si3N4 and TaN; and
the metal layer comprises a multiple layer structure which contains an adhesion-promotion layer, which faces towards the semiconductor layer sequence and is applied directly to the adhesion-improving material, and a reflector layer on the side of the adhesion-promotion layer facing away from the semiconductor layer sequence.