Organic optoelectronic component and method for producing an organic optoelectronic component
View Patent ↗In at least one embodiment of the organic optoelectronic component ( 1 ), the latter comprises a carrier ( 2 ) and a first electrode ( 11 ), which is mounted on the carrier ( 2 ). Furthermore, the component ( 1 ) contains at least one organic layer sequence ( 3 ) with at least one organic active layer ( 33 ). Furthermore, the component ( 1 ) comprises a second electrode ( 22 ), such that the organic layer sequence ( 3 ) is located between the first electrode ( 11 ) and the second electrode ( 22 ). At least one dark region ( 4 ) and at least one bright region ( 5 ) are formed in a lateral direction. In both the dark region ( 4 ) and the bright region ( 5 ), both the first electrode ( 11 ) and the second electrode ( 22 ) and also the organic layer sequence ( 3 ) are applied to the carrier ( 2 ) in places or over the entire surface. A first reflectivity of the dark region ( 4 ) differs from a second reflectivity of the bright region ( 5 ) by at most 15 percentage points.
1. A method of producing an organic optoelectronic component comprising steps of:
providing a carrier with a first electrode;
applying a first photosensitive material to the first electrode on a main side of the carrier and exposing the first photosensitive material apart from a first region of the first electrode;
completely removing the first photosensitive material, a thickness of the first electrode remaining unchanged over a complete area where the first photosensitive material has been applied to the first electrode;
after completely removing the first photosensitive material applying a further photosensitive material to the first electrode and exposing the further photosensitive material apart from a second region of the first electrode, the second region at least partially including the first region;
completely removing the further photosensitive material; and
producing an organic layer sequence with at least one organic active layer, the organic layer sequence and a second electrode on the first electrode;
wherein a work function at a major face of the first electrode remote from the carrier is decreased in at least one overlap region, in which the first region and the second region overlap, compared with other regions of the first electrode which are located outside the at least one overlap region,
wherein between the step of exposing the further photosensitive material and the step of removing the further photosensitive material the first electrode is removed in a further step apart from the second region so that the first electrode is removed outside the second region,
wherein at least one bright region is formed in the at least one overlap region of the first and second regions where the first photosensitive material and the further photosensitive material have been applied and subsequently removed,
wherein at least one dark region is formed in a remaining region of the second region not belonging to the at least one bright region,
wherein the step of exposing the first photosensitive material is performed by illuminating the first photosensitive material with a radiation to one of:
destroy the first photosensitive material or
make the first photosensitive material soluble,
wherein the organic layer sequence with the at least one organic active layer is applied onto the main side of the carrier,
wherein the second electrode is applied directly onto the organic layer sequence and the organic layer sequence is applied directly onto the first electrode, and
wherein, both in the at least one dark region and in the at least one bright region, the first and the second electrodes and the organic layer sequence are applied to the carrier,
wherein the first photosensitive material and the further photosensitive material are applied directly onto the first electrode.
2. The method of claim 1 , wherein the first electrode is formed with or from indium-tin oxide, exposure of the first photosensitive material and the further photosensitive material is carried out with wavelengths of between 240 nm and 380 nm inclusive, and a positive photoresist is used as the first photosensitive material and the further photosensitive material and both photosensitive materials are developed in the at least one overlap region.
3. The method of claim 1 , wherein a thickness of the first electrode is between 50 nm and 200 nm, and wherein the first electrode is transmissive for radiation generated in the organic optoelectronic component.
4. The method according to claim 1 ,
wherein the first photosensitive material and the further photosensitive material are positive resists, wherein the step of removing the first photosensitive material takes place by ashing with an oxygen plasma and by subsequent rinsing with a glycol ester,
wherein in the at least one overlap region, the first photosensitive material and the further photosensitive material are developed but not exposed, and
wherein the first electrode consists of indium-tin oxide.