Optoelectronic semiconductor chip
View Patent ↗In at least one embodiment of the optoelectronic semiconductor chip ( 1 ), the latter is based on a nitride material system and comprises at least one active quantum well ( 2 ). The at least one active quantum well ( 2 ) is designed to generate electromagnetic radiation when in operation. Furthermore, the at least one active quantum well ( 2 ) comprises N successive zones (A) in a direction parallel to a growth direction z of the semiconductor chip ( 1 ), N being a natural number greater than or equal to 2. At least two of the zones (A) of the active quantum well ( 2 ) have mutually different average indium contents c. Furthermore the at least one active quantum well ( 2 ) fulfills the condition: 40≦∫ c ( z ) dz −2.5 N −1.5∫ dz ≦80.
1. An optoelectronic semiconductor chip, based on a nitride material system, comprising:
at least one active quantum well;
wherein during operation electromagnetic radiation is generated in the at least one active quantum well;
wherein the active quantum well comprises N successive zones (A) in a direction parallel to a growth direction z of the optoelectronic semiconductor chip, N being a natural number;
wherein at least two of the successive zones (A) have average indium contents c which differ from one another;
wherein the at least one active quantum well fullfils the following condition:
40 ≦∫c ( z ) dz− 2.5 N− 1.5 ∫dz≦ 80;
wherein N is greater than or equal to 4 and in which, in the direction parallel to the growth direction z and from a p-connection side (p) towards an n-connection side (n) of the optoelectronic semiconductor chip, the following relationships apply for an average indium content c for at least some of the successive zones (A):
c i <c i+1 and c i+1 >c i+2 , and c i <c i+2 ;
wherein the successive zones (A) are numbered consecutively in a direction parallel to the growth direction z;
wherein a total thickness of the active quantum well is between 3.5 nm and 8 nm, inclusive;
wherein a thickness of each zone of the successive zones is between 1.5 nm and 3 nm, inclusive; and
wherein the indium content of at least one zone, which is adjacent to a zone with a maximum indium content, is between 40% and 60% inclusive of an average indium content of the zone with the maximum indium content.
2. The optoelectronic semiconductor chip according to claim 1 , in which the at least one active quantum well fullfils the following condition:
40
≤
∑
i
=
1
N
c
i
w
i
-
2
.
5
N
-
1.5
∑
i
=
1
N
w
i
≤
80
;
wherein c i is the average indium content of an i-th zone of the successive zones (A); w i is a width of the i-th zone of the successive zones (A); and the successive zones (A) are numbered consecutively in the direction parallel to the growth direction z.
3. The optoelectronic semiconductor chip according to claim 1 , wherein the indium content c is in each case constant within the successive zones (A) of the at least one active quantum well.
4. The optoelectronic semiconductor chip according to claim 1 , wherein the indium content c in the at least one active quantum well increases monotonically in the direction parallel to the growth direction z.
5. The optoelectronic semiconductor chip according to claim 1 , wherein N is not more than 5.
6. The optoelectronic semiconductor chip according to claim 1 , wherein the optoelectronic semiconductor chip comprises between 2 and 5 active quantum wells inclusive in the direction parallel to the growth direction z.
7. The optoelectronic semiconductor chip according to claim 6 , wherein at least one inactive quantum well is located between at least two adjacent active quantum wells.
8. The optoelectronic semiconductor chip according to claim 1 , wherein the optoelectronic semiconductor chip comprises at least two inactive quantum wells; and wherein an indium content of the at least two inactive quantum wells is in each case smaller than a maximum indium content of the at least one active quantum well.
9. The optoelectronic semiconductor chip according to claim 1 , wherein the optoelectronic semiconductor chip comprises at least two waveguide layers; wherein the at least one active quantum well is located between the at least two waveguide layers; and wherein at least one of the at least two waveguide layers contains at least one charge carrier barrier layer.
10. The optoelectronic semiconductor chip according to claim 1 , wherein the optoelectronic semiconductor chip is configured to generate laser radiation.
11. The optoelectronic semiconductor chip according to claim 1 , wherein the optoelectronic semiconductor chip is configured to generate electromagnetic radiation between 430 nm and 540 nm inclusive.
12. The optoelectronic semiconductor chip according to claim 1 , wherein a single zone on a p-side of the successive zones (A) has a highest indium content c.
13. The optoelectronic semiconductor chip according to claim 12 , wherein the single zone on the p-side of the successive zones (A) has a lower indium content c than a further zone directly adjoining another zone of the successive zones (A) having a highest indium content in a direction to an n-side of the successive zones (A).
14. The optoelectronic semiconductor chip according to claim 1 , wherein N is equal to 4.