Capacitor reformation method and apparatus
View Patent ↗A method of reforming a wet-tantalum capacitor includes providing a medical device comprising a wet-tantalum capacitor. The capacitor has a rated voltage and including a hydrated anodic deposit. The method further includes charging the capacitor to a voltage that is less than approximately seventy-five percent of the rated voltage and at least partially discharging the capacitor after the charging step. The charging step is performed at a sufficient voltage to dehydrate the anodic deposit while not significantly decreasing the service life of the capacitor.
1. A method of reforming a capacitor comprising:
charging the capacitor to a voltage that is less than approximately seventy-five percent of a rated voltage for the capacitor, the capacitor being provided in an implantable medical device and including a hydrated anodic deposit prior to the charging step; and
at least partially discharging the capacitor after the charging step through at least one of a leakage current or a non-therapeutic load;
wherein the charging step is performed at a sufficient voltage to dehydrate the anodic deposit while not significantly decreasing the service life of the capacitor.
2. The method of claim 1 , wherein the capacitor comprises an anode that comprises a material selected from the group consisting of aluminum, niobium, zirconium, titanium, and alloys and oxides of aluminum, niobium, zirconium, and titanium.
3. The method of claim 1 , wherein the discharging step comprises discharging the capacitor through a leakage current.
4. The method of claim 1 , wherein the discharging step comprises discharging the capacitor through a non-therapeutic load.
5. The method of claim 1 , further comprising holding the capacitor at the voltage less than approximately seventy-five percent of the rated voltage for a time period greater than one hour.
6. The method of claim 5 , further comprising maintaining a charge level of the capacitor during the holding step using a top-off circuit.
7. The method of claim 1 , further comprising stopping the charging step upon initiation of a therapeutic discharge cycle.
8. The method of claim 1 , wherein the voltage less than approximately seventy-five percent of the rated voltage is less than approximately fifty percent of the rated voltage.
9. The method of claim 1 , wherein the anodic deposit is a soluble phosphate on an anode of the capacitor.
10. A method of reforming a capacitor comprising:
charging the capacitor to a voltage that is less than seventy-five percent of a rated voltage for a capacitor, wherein the capacitor comprises a material selected from the group consisting of aluminum, niobium, zirconium, titanium, and alloys and oxides of aluminum, niobium, zirconium, and titanium; and
after the charging step, discharging the capacitor through a resistance or a leakage current;
wherein the charging step comprises maintaining the capacitor at the voltage for a sufficient amount of time to dehydrate a deposit on an anode of the capacitor to reform the capacitor.
11. The method of claim 10 , wherein the charging step is carried out automatically.
12. The method of claim 10 , wherein the charging step comprises maintaining the capacitor at the voltage for a time period greater than one hour.
13. The method of claim 10 , wherein the charging step utilizes a top-off circuit to maintain a charge level of the capacitor.
14. The method of claim 10 , wherein the capacitor is provided in an implantable medical device and further comprising stopping the charging step upon initiation of a therapeutic discharge cycle.
15. The method of claim 10 , wherein the voltage is less than approximately fifty percent of the rated voltage.
16. A device comprising:
a processor;
a power source; and
at least one capacitor coupled to the power source,
wherein the processor carries out instructions to charge the capacitor to a voltage that is less than approximately seventy-five percent of a rated voltage for the capacitor and to discharge the at least one capacitor through leakage current or through a resistance such that an anodic deposit is dehydrated to reform the capacitor;
wherein the processor is configured to carry out the instructions in a manner that is intended to reform the capacitor at a relatively low voltage while not substantially adversely affecting the life of the capacitor.
17. The device of claim 16 , wherein the capacitor includes an anode formed of a material selected from the group consisting of aluminum, niobium, zirconium, titanium, and alloys and oxides of aluminum, niobium, zirconium, and titanium.
18. The device of claim 16 , wherein the processor is configured to maintain the voltage of the capacitor at a voltage that is less than approximately seventy-five percent of the rated voltage for the capacitor for more than one hour.
19. The device of claim 16 , wherein the processor is configured to maintain the voltage of the capacitor at a voltage that is less than approximately fifty percent of the rated voltage for the capacitor.
20. The device of claim 16 , wherein the device is selected from the group consisting of munitions, a photo flash, and an automated external defibrillator.