Optical to optical infrared imaging detection system

1. An infrared or optical image detection system, the system comprising:

a first infrared or optical imaging device that is sensitive to a light which creates a photocurrent or changes in electric field or stresses within the first imaging device; and

a second infrared imaging device that is illuminated by light incident to the first imaging device which is reflected to the second imaging device which images optical changes in phase or polarization or amplitude or birefringence within the first imaging device.

2. The structure of claim 1 , wherein a photocurrent or changes in electric field or stresses in the first imaging device is read by the second imaging device illuminated by non-invasive light incident to the first imaging device.

3. The structure of claim 2 wherein the second imaging device images optical changes in phases or polarization or amplitude or birefringence or stresses acting upon the first imaging device which are displayed and analyzed to enhance the light reflected from the first imaging device.

4. The structure of claim 1 wherein the first imaging device is sensitive to a wavelength shorter or longer to the light incident to the first imaging device.

5. The structure of claim 1 wherein the reflected light from the first imaging device which is incident upon the second imaging device is at least from an infrared light source incident to a semiconductor material or an ultraviolet light source incident to a free-metal substrate.

6. The structure of claim 1 wherein the second imaging device consists of at least one or more image detection devices, which generate a plurality of images including a first image and subsequent images.

7. The structure of claim 6 wherein comparisons between the first image and subsequent images are obtained by computer processing.

8. The structure of claim 7 wherein the comparisons between the first image and subsequent images are stored or displayed.

9. The structure of claim 6 wherein the plurality of images are displayed.

10. The structure of claim 1 wherein the optical changes are caused by at least one of the following external stresses acting upon the primary detector:

an incident magnetic field, an incident microwave beam or signal, an adjacent bioelectric field, an incident infrared beam, an incident thermal beam, an incident ultraviolet beam, an incident subatomic radiation, an incident atomic particle, an incident electron beam, an incident ion beam, or an incident x-ray beam.

11. The structure of claim 1 wherein the optical changes are caused by at least one of the following internal stresses acting upon the primary detector: a photo-generated carrier, a thermal generated carrier, or a photo-induced resistance.