Light emitting diode element
View Patent ↗A light emitting diode element having a light emitting diode; and a glass covering sealing the light emitting diode is provided. The glass of the covering consists essentially of from 30 to 70 mol% of SnO, from 15 to 50 mol% of P 2 O 5 , from 0.1 to 20 mol% of ZnO, from 0 to 10 mol% of SiO 2 +GeO 2 , from 0 to 30% of Li 2 O+Na 2 O+K 2 O, and from 0 to 20% of MgO+CaO+SrO+BaO. In an embodiment, a refractive index of the glass of the covering is at least 1.6 at a wavelength of 400nm.
1. A light emitting diode element, comprising:
a light emitting diode; and
a glass covering sealing the light emitting diode;
wherein
the glass covering is directly bonded to at least one surface of the light emitting diode element,
the glass of the covering consists essentially of, as represented by mol% based on the following oxides:
from 45 to 70% of SnO,
from 15 to 40% of P 2 O 5 ,
from 0.1 to 13% of ZnO,
from 0 to 10% of SiO 2 +GeO 2 ,
from 0 to 30% of Li 2 O+Na 2 O+K 2 O, and
from 0 to 20% of MgO+CaO+SrO+BaO, and
a total amount of SnO and ZnO is from 1.8 to 2.2 times an amount of P 2 O 5 .
2. The light emitting diode element according to claim 1 , wherein a refractive index of the glass of the covering is at least 1.6 at a wavelength of 400nm.
3. The light emitting diode element according to claim 1 , wherein a refractive index of the glass of the covering is at least 1.7 at a wavelength of 633nm.
4. The light emitting diode element according to claim 1 , wherein an average linear expansion coefficient of the glass of the covering is from 75×10 −7 to 140×10 −7 /° C. within a range of from 50 to 300° C.
5. The light emitting diode element according to claim 1 , wherein a crystallization temperature of the glass of the covering is higher than 400° C.
6. The light emitting diode element according to claim 1 , wherein a temperature at which a viscosity of the glass becomes 10 5 P is less than 500° C.
7. The light emitting diode element according to claim 1 , wherein a crystallization temperature is at least 60° C. higher than a softening point of the glass.
8. The light emitting diode element according to claim 1 , wherein the glass comprises ZnO in an amount of 3% to 13%.
9. The light emitting diode element according to claim 1 , wherein the total amount of SnO and ZnO is from 1.9 to 2.1 times the amount of P 2 O 5 .
10. The light emitting diode element according to claim 1 , wherein the glass of the covering has a light transmittance of at least 70% at a wavelength of from 400 to 750 nm.
11. The light emitting diode element according to claim 1 , wherein the glass of the covering has a light transmittance of at least 70% at a wavelength of from 360 to 750 nm.
12. The light emitting diode element according to claim 1 , wherein a crystallization temperature is at least 90° C. higher than a softening point of the glass.
13. The light emitting diode element according to claim 1 , wherein a refractive index of the glass of the covering is at least 2.0 at a wavelength of 400 nm.
14. The light emitting diode element according to claim 1 , wherein a temperature at which a viscosity of the glass becomes 10 5 P is at most 380° C.