Semiconductor device and method for fabricating the same

1. A semiconductor device comprising:

an interlayer insulating film which is formed on a semiconductor substrate and includes a groove;

a barrier film formed on a bottom surface and a side surface of the groove; and

an interconnect body layer which is formed on the barrier film to fill the groove and contains copper as a main component, wherein:

the barrier film contains at least a first metallic element and a second metallic element different from the first metallic element,

the interlayer insulating film contains at least a first constituent element and a second constituent element,

the barrier film includes a first compound made of the first metallic element and the first constituent element and a second compound made of the second metallic element and the second constituent element, and

both of the first compound and the second compound are in contact with the interlayer insulating film at the side surface or the bottom surface of the groove.

2. The semiconductor device of claim 1 , further comprising:

a conductive layer which is formed under the interconnect body layer, and includes a connection portion connected to part of the interconnect body layer, wherein

the barrier film is not provided at the connection portion at which the conductive layer is connected to the interconnect body layer.

3. The semiconductor device of claim 1 , wherein

the barrier film is also formed on an upper surface of the interconnect body layer.

4. The semiconductor device of claim 1 , wherein

the first metallic element is a metallic element which easily forms a compound with silicon, oxygen, and carbon, and

the second metallic element is a metallic element which easily forms a compound with silicon, oxygen, and carbon, and has a slower diffusion rate in copper than the first metallic element.

5. The semiconductor device of claim 4 , wherein

oxide of the first metallic element and carbide of the second metallic element have diffusion barrier properties against copper.

6. The semiconductor device of claim 4 , wherein

the second metallic element is an element which does not form an intermetallic compound with the first metallic element.

7. The semiconductor device of claim 4 , wherein

the first metallic element is at least one element selected from the group consisting of manganese, niobium, zirconium, chromium, vanadium, yttrium, technetium, and rhenium, and

the second metallic element is at least one element of tantalum or titanium.

8. The semiconductor device of claim 1 , wherein

the interlayer insulating film contains silicon and oxygen as main components, is a low dielectric constant film containing 20 atomic percent (at. %) or more of carbon, and includes a local region in which a concentration of the carbon is high.

9. The semiconductor device of claim 1 , wherein

the interlayer insulating film is a low dielectric constant film which contains silicon and oxygen as main components, includes a hole, and contains a volatile compound containing carbon as a main component to form the hole.

10. The semiconductor device of claim 1 , wherein

the first constituent element is oxygen, and

the second constituent element is carbon.

11. The semiconductor device of claim 1 , wherein

at an interface between the barrier film and the interlayer insulating film, an area in which the second compound is in contact with the interlayer insulating film is smaller than an area in which the first compound is in contact with the interlayer insulating film.

12. The semiconductor device of claim 1 , wherein the first compound forms a film shape having an opening and the second compound is disposed in the opening of the film shaped first compound.